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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT80SM120BSICFET N-CH 1200V 80A TO247 Microsemi Corporation |
8,807 | - |
|
数据表 |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | Through Hole | 2.5V @ 1mA | 235 nC @ 20 V | 1200 V | +25V, -10V | - | - | - | TO-247 | - | 555W (Tc) | -55°C ~ 175°C (TJ) |
|
APT40SM120JMOSFET N-CH 1200V 32A SOT227 Microsemi Corporation |
7,671 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 20V | 100mOhm @ 20A, 20V | Chassis Mount | 3V @ 1mA (Typ) | 130 nC @ 20 V | 1200 V | +25V, -10V | 2560 pF @ 1000 V | - | - | SOT-227 | - | 165W (Tc) | -55°C ~ 175°C (TJ) |
|
APT80SM120SSICFET N-CH 1200V 80A D3PAK Microsemi Corporation |
2,840 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | Surface Mount | 2.5V @ 1mA | 235 nC @ 20 V | 1200 V | +25V, -10V | - | - | - | D3PAK | - | 625W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APTM120DA56T1GMOSFET N-CH 1200V 18A SP1 Microsemi Corporation |
2,652 | - |
|
数据表 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | Chassis Mount | 5V @ 2.5mA | 300 nC @ 10 V | 1200 V | ±30V | 7736 pF @ 25 V | - | - | SP1 | - | 390W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APTM120SK56T1GMOSFET N-CH 1200V 18A SP1 Microsemi Corporation |
9,088 | - |
|
数据表 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | Chassis Mount | 5V @ 2.5mA | 300 nC @ 10 V | 1200 V | ±30V | 7736 pF @ 25 V | - | - | SP1 | - | 390W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APT55M65JFLLMOSFET N-CH 550V 63A ISOTOP Microsemi Corporation |
7,138 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 63A (Tc) | 10V | 65mOhm @ 31.5A, 10V | Chassis Mount | 5V @ 5mA | 205 nC @ 10 V | 550 V | ±30V | 9165 pF @ 25 V | - | - | ISOTOP® | - | 595W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APTM100DA33T1GMOSFET N-CH 1000V 23A SP1 Microsemi Corporation |
9,444 | - |
|
数据表 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | Chassis Mount | 5V @ 2.5mA | 305 nC @ 10 V | 1000 V | ±30V | 7868 pF @ 25 V | - | - | SP1 | - | 390W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APTC60DAM35T1GMOSFET N-CH 600V 72A SP1 Microsemi Corporation |
4,500 | - |
|
数据表 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | Chassis Mount | 3.9V @ 5.4mA | 518 nC @ 10 V | 600 V | ±20V | 14000 pF @ 25 V | - | - | SP1 | - | 416W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APTC60SKM35T1GMOSFET N-CH 600V 72A SP1 Microsemi Corporation |
3,297 | - |
|
数据表 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | Chassis Mount | 3.9V @ 5.4mA | 518 nC @ 10 V | 600 V | ±20V | 14000 pF @ 25 V | - | - | SP1 | - | 416W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APT60M80JVRMOSFET N-CH 600V 55A ISOTOP Microsemi Corporation |
9,796 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 10V | 80mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 870 nC @ 10 V | 600 V | ±30V | 14500 pF @ 25 V | - | - | ISOTOP® | - | 568W (Tc) | -55°C ~ 150°C (TJ) |
