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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT20N60BC3G

APT20N60BC3G

MOSFET N-CH 600V 20.7A TO247-3

Microsemi Corporation

5,460 -
APT20N60BC3G

数据表

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V Through Hole 3.9V @ 1mA 114 nC @ 10 V 600 V ±20V 2440 pF @ 25 V - - TO-247-3 - 208W (Tc) -55°C ~ 150°C (TJ)
APT17N80BC3G

APT17N80BC3G

MOSFET N-CH 800V 17A TO247-3

Microsemi Corporation

6,793 -
APT17N80BC3G

数据表

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 290mOhm @ 11A, 10V Through Hole 3.9V @ 1mA 90 nC @ 10 V 800 V ±20V 2250 pF @ 25 V - - TO-247-3 - 208W (Tc) -55°C ~ 150°C (TJ)
APT20N60SC3G

APT20N60SC3G

MOSFET N-CH 600V 20.7A D3PAK

Microsemi Corporation

2,712 -
APT20N60SC3G

数据表

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V Surface Mount 3.9V @ 1mA 114 nC @ 10 V 600 V ±20V 2440 pF @ 25 V - - D3PAK - 208W (Tc) -55°C ~ 150°C (TJ)
APT17N80SC3G

APT17N80SC3G

MOSFET N-CH 800V 17A D3PAK

Microsemi Corporation

9,699 -
APT17N80SC3G

数据表

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 290mOhm @ 11A, 10V Surface Mount 3.9V @ 1mA 90 nC @ 10 V 800 V ±20V 2250 pF @ 25 V - - D3PAK - 208W (Tc) -55°C ~ 150°C (TJ)
APT9F100S

APT9F100S

MOSFET N-CH 1000V 9A D3PAK

Microsemi Corporation

7,194 -
APT9F100S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 1.6Ohm @ 5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 1000 V ±30V 2606 pF @ 25 V - - D3PAK - 337W (Tc) -55°C ~ 150°C (TJ)
MSC280SMA120S

MSC280SMA120S

SICFET N-CH 1.2KV D3PAK

Microsemi Corporation

3,728 -
MSC280SMA120S

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel SiCFET (Silicon Carbide) - - - Surface Mount - - 1200 V - - - - D3PAK - - -55°C ~ 175°C (TJ)
APT5020SVRG

APT5020SVRG

MOSFET N-CH 500V 26A D3PAK

Microsemi Corporation

9,251 -
APT5020SVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 200mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 500 V - 4440 pF @ 25 V - - D3PAK - - -
APT30M85BVFRG

APT30M85BVFRG

MOSFET N-CH 300V 40A TO247

Microsemi Corporation

5,650 -
APT30M85BVFRG

数据表

POWER MOS V® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 85mOhm @ 500mA, 10V Through Hole 4V @ 1mA 195 nC @ 10 V 300 V ±30V 4950 pF @ 25 V - - TO-247 [B] - 300W (Tc) -55°C ~ 150°C (TJ)
APT34F60BG

APT34F60BG

MOSFET N-CH 600V 34A TO247-3

Microsemi Corporation

3,325 -
APT34F60BG

数据表

POWER MOS 8™ TO-247-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 210mOhm @ 17A, 10V Through Hole 5V @ 1mA 165 nC @ 10 V 600 V ±30V 6640 pF @ 25 V - - TO-247-3 - 624W (Tc) -55°C ~ 150°C (TJ)
APT30M70SVRG

APT30M70SVRG

MOSFET N-CH 300V 48A D3PAK

Microsemi Corporation

3,395 -
APT30M70SVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 70mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 300 V ±30V 5870 pF @ 25 V - - D3PAK - 370W (Tc) -55°C ~ 150°C (TJ)
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