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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT20M38BVFRGMOSFET N-CH 200V 67A TO247 Microsemi Corporation |
7,410 | - |
|
数据表 |
POWER MOS V® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | Through Hole | 4V @ 1mA | 225 nC @ 10 V | 200 V | ±30V | 6120 pF @ 25 V | - | - | TO-247 [B] | - | 370W (Tc) | -55°C ~ 150°C (TJ) |
|
APT25SM120BSICFET N-CH 1200V 25A TO247 Microsemi Corporation |
3,662 | - |
|
数据表 |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 25A (Tc) | 20V | 175mOhm @ 10A, 20V | Through Hole | 2.5V @ 1mA | 72 nC @ 20 V | 1200 V | +25V, -10V | - | - | - | TO-247 | - | 175W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT5518BFLLGMOSFET N-CH 550V 31A TO247-3 Microsemi Corporation |
5,981 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 180mOhm @ 15.5A, 10V | Through Hole | 5V @ 1mA | 67 nC @ 10 V | 550 V | ±30V | 3286 pF @ 25 V | - | - | TO-247-3 | - | 403W (Tc) | -55°C ~ 150°C (TJ) |
|
APT20M38SVFRGMOSFET N-CH 200V 67A D3PAK Microsemi Corporation |
6,949 | - |
|
数据表 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | Surface Mount | 4V @ 1mA | 225 nC @ 10 V | 200 V | ±30V | 6120 pF @ 25 V | - | - | D3PAK | - | 370W (Tc) | -55°C ~ 150°C (TJ) |
|
APT10M11B2VFRGMOSFET N-CH 100V 100A T-MAX Microsemi Corporation |
2,317 | - |
|
数据表 |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 11mOhm @ 500mA, 10V | Through Hole | 4V @ 2.5mA | 450 nC @ 10 V | 100 V | ±30V | 10300 pF @ 25 V | - | - | T-MAX™ | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT25SM120SSICFET N-CH 1200V 25A D3 Microsemi Corporation |
2,838 | - |
|
数据表 |
- | D-3 Module | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 25A (Tc) | - | 175mOhm @ 10A, 20V | Chassis Mount | 2.5V @ 1mA | 72 nC @ 20 V | 1200 V | - | - | - | - | D3 | - | 175W (Tc) | -55°C ~ 175°C (TJ) |
|
|
APT31N60BCSGMOSFET N-CH 600V 31A TO247-3 Microsemi Corporation |
4,189 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 100mOhm @ 18A, 10V | Through Hole | 3.9V @ 1.2mA | 85 nC @ 10 V | 600 V | ±30V | 3055 pF @ 25 V | - | - | TO-247-3 | - | 255W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT6017B2LLGMOSFET N-CH 600V 35A T-MAX Microsemi Corporation |
6,073 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | Through Hole | 5V @ 2.5mA | 100 nC @ 10 V | 600 V | ±30V | 4500 pF @ 25 V | - | - | T-MAX™ [B2] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT5014SLLG/TRMOSFET N-CH 500V 35A TO247 Microsemi Corporation |
7,342 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | Through Hole | 5V @ 1mA | 72 nC @ 10 V | 500 V | ±30V | 3261 pF @ 25 V | - | - | TO-247 | - | 403W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT20M22B2VRGMOSFET N-CH 200V 100A T-MAX Microsemi Corporation |
3,333 | - |
|
数据表 |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | Through Hole | 4V @ 2.5mA | 435 nC @ 10 V | 200 V | ±30V | 10200 pF @ 25 V | - | - | T-MAX™ [B2] | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
