| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR644DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
8,481 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 71 nC @ 10 V | 40 V | ±20V | 3200 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFBC30APBF-BE3MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix |
6,108 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | Through Hole | 4.5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 510 pF @ 25 V | - | - | TO-220AB | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SQS405ENW-T1_GE3MOSFET P-CH 12V 16A PPAK1212-8 Vishay Siliconix |
3,687 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 4.5V | 20mOhm @ 13.5A, 4.5V | Surface Mount | 1V @ 250µA | 75 nC @ 8 V | 12 V | ±8V | 2650 pF @ 6 V | AEC-Q101 | - | PowerPAK® 1212-8 | Automotive | 39W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR310MOSFET N-CH 400V 1.7A DPAK Vishay Siliconix |
2,056 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 400 V | ±20V | 170 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR310TRMOSFET N-CH 400V 1.7A DPAK Vishay Siliconix |
6,432 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 400 V | ±20V | 170 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9010TRMOSFET P-CH 50V 5.3A DPAK Vishay Siliconix |
7,991 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | Surface Mount | 4V @ 250µA | 9.1 nC @ 10 V | 50 V | ±20V | 240 pF @ 25 V | - | - | DPAK | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9010MOSFET P-CH 50V 5.3A DPAK Vishay Siliconix |
2,659 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | Surface Mount | 4V @ 250µA | 9.1 nC @ 10 V | 50 V | ±20V | 240 pF @ 25 V | - | - | DPAK | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9014MOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
3,324 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9014TRMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
6,642 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9014TRLMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
5,237 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |