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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3495DV-T1-E3MOSFET P-CH 20V 5.3A 6TSOP Vishay Siliconix |
3,430 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 1.5V, 4.5V | 24mOhm @ 7A, 4.5V | Surface Mount | 750mV @ 250µA | 38 nC @ 4.5 V | 20 V | ±5V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SI7196DP-T1-GE3MOSFET N-CH 30V 16A PPAK SO-8 Vishay Siliconix |
8,701 | - |
|
数据表 |
WFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 11mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 38 nC @ 10 V | 30 V | ±20V | 1577 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 41.6W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP054N65E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,037 | - |
|
数据表 |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 58mOhm @ 20A, 10V | Through Hole | 5V @ 250µA | 108 nC @ 20 V | 600 V | ±30V | 3769 pF @ 100 V | - | - | TO-220AB | - | 312W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFBF20LPBFMOSFET N-CH 900V 1.7A I2PAK Vishay Siliconix |
6,699 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | Through Hole | 4V @ 250µA | 38 nC @ 10 V | 900 V | ±20V | 490 pF @ 25 V | - | - | I2PAK | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHK055N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,040 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 10V | 58mOhm @ 16A, 10V | Surface Mount | 5V @ 250µA | 90 nC @ 10 V | 600 V | ±30V | 3667 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 236W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRF9Z14LMOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix |
3,669 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | Through Hole | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | I2PAK | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MXP120A080FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
540 | - |
|
数据表 |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 29A (Tc) | 18V, 20V | 100mOhm @ 20A, 20V | Through Hole | 2.69V @ 5mA | 47.3 nC @ 18 V | 1200 V | +22V, -10V | 1156 pF @ 800 V | - | - | TO-247-3L | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
|
SIB412DK-T1-E3MOSFET N-CH 20V 9A PPAK SC75-6 Vishay Siliconix |
2,178 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 1.8V, 4.5V | 34mOhm @ 6.6A, 4.5V | Surface Mount | 1V @ 250µA | 10.16 nC @ 5 V | 20 V | ±8V | 535 pF @ 10 V | - | - | PowerPAK® SC-75-6 | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SUD08P06-155L-E3MOSFET P-CH 60V 8.4A TO252 Vishay Siliconix |
2,277 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.4A (Tc) | 4.5V, 10V | 155mOhm @ 5A, 10V | Surface Mount | 3V @ 250µA | 19 nC @ 10 V | 60 V | ±20V | 450 pF @ 25 V | - | - | TO-252AA | - | 2W (Ta), 25W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF720STRRMOSFET N-CH 400V 3.3A D2PAK Vishay Siliconix |
9,107 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 400 V | ±20V | 410 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
