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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHFR430ATRL-GE3

SIHFR430ATRL-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

6,878 -
SIHFR430ATRL-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - TO-252AA - 110W (Tc) -55°C ~ 150°C (TJ)
SI4102DY-T1-E3

SI4102DY-T1-E3

MOSFET N-CH 100V 3.8A 8SO

Vishay Siliconix

5,203 -
SI4102DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 6V, 10V 158mOhm @ 2.7A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 100 V ±20V 370 pF @ 50 V - - 8-SOIC - 2.4W (Ta), 4.8W (Tc) -55°C ~ 150°C (TJ)
SQD23N06-31L_T4GE3

SQD23N06-31L_T4GE3

MOSFET N-CH 60V 23A TO252AA

Vishay Siliconix

3,332 -
SQD23N06-31L_T4GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 10 V 60 V ±20V 845 pF @ 25 V AEC-Q101 - TO-252AA Automotive 37W (Tc) -55°C ~ 175°C (TJ)
SI6459BDQ-T1-E3

SI6459BDQ-T1-E3

MOSFET P-CH 60V 2.2A 8TSSOP

Vishay Siliconix

5,996 -
SI6459BDQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 4.5V, 10V 115mOhm @ 2.7A, 10V Surface Mount 3V @ 250µA 22 nC @ 10 V 60 V ±20V - - - 8-TSSOP - 1W (Ta) -55°C ~ 150°C (TJ)
SIHU5N50D-GE3

SIHU5N50D-GE3

MOSFET N-CH 500V 5.3A TO251

Vishay Siliconix

9,729 -
SIHU5N50D-GE3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 500 V ±30V 325 pF @ 100 V - - TO-251AA - 104W (Tc) -55°C ~ 150°C (TJ)
SUD08P06-155L-T4E3

SUD08P06-155L-T4E3

MOSFET P-CH 60V 8.4A TO252

Vishay Siliconix

3,634 -
SUD08P06-155L-T4E3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8.4A (Tc) 4.5V, 10V 155mOhm @ 5A, 10V Surface Mount 3V @ 250µA 19 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - TO-252AA - 1.7W (Ta), 20.8W (Tc) -55°C ~ 175°C (TJ)
SIHD5N50D-GE3

SIHD5N50D-GE3

MOSFET N-CH 500V 5.3A TO252AA

Vishay Siliconix

6,849 -
SIHD5N50D-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 500 V ±30V 325 pF @ 100 V - - DPAK - 104W (Tc) -55°C ~ 150°C (TJ)
SI2303BDS-T1-E3

SI2303BDS-T1-E3

MOSFET P-CH 30V 1.49A SOT23-3

Vishay Siliconix

5,812 -
SI2303BDS-T1-E3

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.49A (Ta) 4.5V, 10V 200mOhm @ 1.7A, 10V Surface Mount 3V @ 250µA 10 nC @ 10 V 30 V ±20V 180 pF @ 15 V - - SOT-23-3 (TO-236) - 700mW (Ta) -55°C ~ 150°C (TJ)
SI3441BDV-T1-E3

SI3441BDV-T1-E3

MOSFET P-CH 20V 2.45A 6TSOP

Vishay Siliconix

3,475 -
SI3441BDV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.45A (Ta) 2.5V, 4.5V 90mOhm @ 3.3A, 4.5V Surface Mount 850mV @ 250µA 8 nC @ 4.5 V 20 V ±8V - - - 6-TSOP - 860mW (Ta) -55°C ~ 150°C (TJ)
TN0200K-T1-E3

TN0200K-T1-E3

MOSFET N-CH 20V SOT23-3

Vishay Siliconix

5,938 -
TN0200K-T1-E3

数据表

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 730mA (Ta) - 400mOhm @ 600mA, 4.5V Surface Mount 1V @ 50µA 2 nC @ 4.5 V 20 V - - - - SOT-23-3 (TO-236) - - -
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