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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSZ0704LSATMA1

BSZ0704LSATMA1

MOSFET N-CH 60V 11A/40A TSDSON

Infineon Technologies

7,184 -
BSZ0704LSATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 40A (Tc) 4.5V, 10V 9.9mOhm @ 20A, 10V Surface Mount 2.3V @ 14µA 8.6 nC @ 4.5 V 60 V ±20V 1300 pF @ 30 V - - PG-TDSON-8 FL - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
BSC0704LSATMA1

BSC0704LSATMA1

MOSFET N-CH 60V 11A/47A TDSON

Infineon Technologies

5,280 -
BSC0704LSATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V Surface Mount 2.3V @ 14µA 9.4 nC @ 4.5 V 60 V ±20V 1300 pF @ 30 V - - PG-TDSON-8-6 - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
PJQ2463A-AU_R1_000A1

PJQ2463A-AU_R1_000A1

DFN2020B-6L, MOSFET

Panjit International Inc.

2,847 -
PJQ2463A-AU_R1_000A1

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 4.5V, 10V 105mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 60 V ±20V 785 pF @ 30 V AEC-Q101 - DFN2020B-6 Automotive 2W (Ta) -55°C ~ 150°C (TJ)
PJQ5420_R2_00001

PJQ5420_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,394 -
PJQ5420_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.5A (Ta), 60A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 7.1 nC @ 4.5 V 30 V ±20V 763 pF @ 25 V - - DFN5060-8 - 2W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
PJW5N10-AU_R2_000A1

PJW5N10-AU_R2_000A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,431 -
PJW5N10-AU_R2_000A1

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.1A (Ta), 5A (Tc) 6V, 10V 130mOhm @ 2.5A, 10V Surface Mount 3.5V @ 250µA 12 nC @ 10 V 100 V ±20V 707 pF @ 30 V AEC-Q101 - SOT-223 Automotive 3.1W (Ta), 8W (Tc) -55°C ~ 150°C (TJ)
PJD55N03_L2_00001

PJD55N03_L2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,974 -
PJD55N03_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.5A (Ta), 55A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 7.1 nC @ 4.5 V 30 V ±20V 763 pF @ 25 V - - TO-252AA - 2W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
NVTFS6H854NLTAG

NVTFS6H854NLTAG

MOSFET N-CH 80V 10A/41A 8WDFN

onsemi

1,270 -
NVTFS6H854NLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V Surface Mount 2V @ 45µA 17 nC @ 10 V 80 V ±20V 902 pF @ 40 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ)
DIT100N10

DIT100N10

MOSFET TO220AB N 100V 0.0099OHM

Diotec Semiconductor

997 -
DIT100N10

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 13mOhm @ 40A, 10V Through Hole 4V @ 250µA 85 nC @ 10 V 100 V ±20V 4800 pF @ 50 V - - TO-220AB - 200W (Tc) -55°C ~ 175°C (TJ)
PJP100N06SA-AU_T0_006A1

PJP100N06SA-AU_T0_006A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

990 -
PJP100N06SA-AU_T0_006A1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

MOSFET P-CH 40V 20A DPAK

Toshiba Semiconductor and Storage

935 -
TJ20S04M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V Surface Mount 3V @ 1mA 37 nC @ 10 V 40 V +10V, -20V 1850 pF @ 10 V - - DPAK+ - 41W (Tc) 175°C (TJ)
MCAC65N06YHE3-TP

MCAC65N06YHE3-TP

MOSFET N-CH 60 65A DFN5060

Micro Commercial Co

7,261 -
MCAC65N06YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.5 nC @ 10 V 60 V ±20V 1740 pF @ 30 V AEC-Q101 - DFN5060 Automotive 100W (Tj) -55°C ~ 175°C (TJ)
MCAC95N04YHE3-TP

MCAC95N04YHE3-TP

MOSFET N-CH 40 95A DFN5060

Micro Commercial Co

5,000 -
MCAC95N04YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V Surface Mount 4V @ 250µA 27.7 nC @ 10 V 40 V ±20V 1709 pF @ 20 V AEC-Q101 - DFN5060 Automotive 75W (Tj) -55°C ~ 175°C (TJ)
NVMYS3D5N04CTWG

NVMYS3D5N04CTWG

MOSFET N-CH 40V 24A/102A LFPAK4

onsemi

2,954 -
NVMYS3D5N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V Surface Mount 3.5V @ 60µA 23 nC @ 10 V 40 V ±20V 1600 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
SI4894BDY-T1-GE3

SI4894BDY-T1-GE3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix

2,500 -
SI4894BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1580 pF @ 15 V - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
NVTFS5C460NLTAG

NVTFS5C460NLTAG

MOSFET N-CH 40V 19A/74A 8WDFN

onsemi

1,210 -
NVTFS5C460NLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V Surface Mount 2V @ 40µA 11 nC @ 10 V 40 V ±20V 1300 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
SIRA54DP-T1-GE3

SIRA54DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

5,980 -
SIRA54DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 2.35mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA 48 nC @ 4.5 V 40 V +20V, -16V 5300 pF @ 20 V - - PowerPAK® SO-8 - 36.7W (Tc) -55°C ~ 150°C (TJ)
STP3NK60Z

STP3NK60Z

MOSFET N-CH 600V 2.4A TO220AB

STMicroelectronics

4,867 -
STP3NK60Z

数据表

SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V Through Hole 4.5V @ 50µA 11.8 nC @ 10 V 600 V ±30V 311 pF @ 25 V - - TO-220 - 45W (Tc) -55°C ~ 150°C (TJ)
ISZ330N12LM6ATMA1

ISZ330N12LM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

Infineon Technologies

3,719 -
ISZ330N12LM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.7A (Ta), 24A (Tc) 3.3V, 10V 33mOhm @ 9A, 10V Surface Mount 2.2V @ 11µA 10.1 nC @ 10 V 120 V ±20V 650 pF @ 60 V - - PG-TSDSON-8 FL - 2.5W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
PJD40P03E-AU_L2_006A1

PJD40P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD40P03E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta), 33A (Tc) 4.5V, 10V 18.8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 22 nC @ 10 V 30 V ±25V 1009 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ)
TK5P65W,RQ

TK5P65W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

1,987 -
TK5P65W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V Surface Mount 3.5V @ 170µA 10.5 nC @ 10 V 650 V ±30V 380 pF @ 300 V - - DPAK - 60W (Tc) 150°C
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