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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM680P06CH -60V, -18A, SINGLE P-CHANNEL POW Taiwan Semiconductor Corporation	2,314	-	询价单	数据表	-	TO-251-3 Stub Leads, IPAK	Tube	Active	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	68mOhm @ 6A, 10V	Through Hole	2.2V @ 250µA	16.4 nC @ 10 V	60 V	±20V	870 pF @ 30 V	-	-	TO-251S (IPAK SL)	-	20W (Tc)	-55°C ~ 150°C (TJ)
SPB21N10T MOSFET N-CH 100V 21A TO263-3 Infineon Technologies	9,144	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	80mOhm @ 15A, 10V	Surface Mount	4V @ 44µA	38.4 nC @ 10 V	100 V	±20V	865 pF @ 25 V	-	-	PG-TO263-3-2	-	90W (Tc)	-55°C ~ 175°C (TJ)
TK5P50D(T6RSS-Q) MOSFET N-CH 500V 5A DPAK Toshiba Semiconductor and Storage	3,871	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Surface Mount	4.4V @ 1mA	11 nC @ 10 V	500 V	±30V	490 pF @ 25 V	-	-	DPAK	-	80W (Tc)	150°C (TJ)
STU5N95K5 MOSFET N-CH 950V 3.5A IPAK STMicroelectronics	4,779	-	询价单	数据表	MDmesh™ K5	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	10V	2.5Ohm @ 1.5A, 10V	Through Hole	5V @ 100µA	12.5 nC @ 10 V	950 V	±30V	220 pF @ 100 V	-	-	TO-251 (IPAK)	-	70W (Tc)	-55°C ~ 150°C (TJ)
IAUC64N08S5L075ATMA1 MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies	3,580	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tj)	4.5V, 10V	7.5mOhm @ 32A, 10V	Surface Mount	2V @ 30µA	37 nC @ 10 V	80 V	±20V	2106 pF @ 40 V	-	-	PG-TDSON-8-33	-	75W (Tc)	-55°C ~ 175°C (TJ)
IRLR7807ZTR MOSFET N-CH 30V 43A DPAK Infineon Technologies	2,464	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	Surface Mount	2.25V @ 250µA	11 nC @ 4.5 V	30 V	±20V	780 pF @ 15 V	-	-	TO-252AA (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
TSM085P03CV -30, -64, SINGLE P-CHANNEL Taiwan Semiconductor Corporation	3,981	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	14A (Ta), 64A (Tc)	4.5V, 10V	8.5mOhm @ 14A, 10V	Surface Mount	2.5V @ 250µA	55 nC @ 10 V	30 V	±20V	3234 pF @ 15 V	-	-	8-PDFN (3.1x3.1)	-	2.4W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
HUFA76432P3 MOSFET N-CH 60V 59A TO220-3 onsemi	2,515	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	4.5V, 10V	17mOhm @ 59A, 10V	Through Hole	3V @ 250µA	53 nC @ 10 V	60 V	±16V	1765 pF @ 25 V	-	-	TO-220-3	-	130W (Tc)	-55°C ~ 175°C (TJ)
STS15N4LLF5 MOSFET N-CH 40V 15A 8SO STMicroelectronics	6,631	-	询价单	数据表	STripFET™ V	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	4.5V, 10V	6.7mOhm @ 7.5A, 10V	Surface Mount	1V @ 250µA	12.9 nC @ 4.5 V	40 V	±16V	1570 pF @ 25 V	-	-	8-SOIC	-	3W (Tc)	-55°C ~ 150°C (TJ)
TSM040N03CP 30V, 90A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	7,609	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	4mOhm @ 24A, 10V	Surface Mount	2.5V @ 250µA	24 nC @ 4.5 V	30 V	±20V	2200 pF @ 25 V	-	-	TO-252 (DPAK)	-	88W (Tc)	150°C (TJ)
STP160N4LF6 MOSFET N-CH 40V 120A TO220 STMicroelectronics	8,156	-	询价单	数据表	DeepGATE™, STripFET™ VI	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	5V, 10V	2.9mOhm @ 60A, 10V	Through Hole	1V @ 250µA (Min)	181 nC @ 10 V	40 V	±20V	8130 pF @ 20 V	-	-	TO-220	-	150W (Tc)	-55°C ~ 175°C (TJ)
HUF76633S3ST MOSFET N-CH 100V 39A D2PAK onsemi	7,951	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	4.5V, 10V	35mOhm @ 39A, 10V	Surface Mount	3V @ 250µA	67 nC @ 10 V	100 V	±16V	1820 pF @ 25 V	-	-	TO-263 (D2PAK)	-	145W (Tc)	-55°C ~ 175°C (TJ)
SPB21N10 G MOSFET N-CH 100V 21A TO263-3 Infineon Technologies	5,290	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	80mOhm @ 15A, 10V	Surface Mount	4V @ 44µA	38.4 nC @ 10 V	100 V	±20V	865 pF @ 25 V	-	-	PG-TO263-3-2	-	90W (Tc)	-55°C ~ 175°C (TJ)
RDN120N25 MOSFET N-CH 250V 12A TO220FN Rohm Semiconductor	8,595	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	210mOhm @ 6A, 10V	Through Hole	4V @ 1mA	62 nC @ 10 V	250 V	±30V	1224 pF @ 10 V	-	-	TO-220FN	-	40W (Tc)	150°C (TJ)
IRFR4105TR MOSFET N-CH 55V 27A DPAK Infineon Technologies	9,107	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	45mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-252AA (DPAK)	-	68W (Tc)	-55°C ~ 155°C (TJ)
DMTH10H4M5LPSW-13 MOSFET BVDSS: 61V~100V POWERDI50 Diodes Incorporated	9,748	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 107A (Tc)	4.5V, 10V	4.9mOhm @ 30A, 10V	Surface Mount, Wettable Flank	2.5V @ 250µA	80 nC @ 10 V	100 V	±20V	4843 pF @ 50 V	-	-	PowerDI5060-8 (Type UX)	-	4.7W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
IRFR5305TRL MOSFET P-CH 55V 31A DPAK Infineon Technologies	3,421	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	65mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1200 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
PJQ5562A_R2_00201 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	3,000	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4005SPSQ-13 MOSFET N-CH 40V 80A PWRDI5060-8 Diodes Incorporated	2,434	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	48 nC @ 10 V	40 V	20V	2847 pF @ 20 V	-	-	PowerDI5060-8	-	2.8W	-55°C ~ 175°C (TJ)
PJL9580_R2_00201 150V N-CHANNEL ENHANCEMENT MODE Panjit International Inc.	2,000	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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