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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMTH4004LPS-13

DMTH4004LPS-13

MOSFET N-CH 40V PWRDI5060

Diodes Incorporated

1,922 -
DMTH4004LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount 3V @ 250µA 82.2 nC @ 10 V 40 V ±20V 4508 pF @ 20 V AEC-Q101 - PowerDI5060-8 Automotive 2.6W (Ta), 138W (Tc) -55°C ~ 175°C (TJ)
IPU80R900P7AKMA1

IPU80R900P7AKMA1

MOSFET N-CH 800V 6A TO251-3

Infineon Technologies

1,435 -
IPU80R900P7AKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 900mOhm @ 2.2A, 10V Through Hole 3.5V @ 110µA 15 nC @ 10 V 800 V ±20V 350 pF @ 500 V - - PG-TO251-3 - 45W (Tc) -55°C ~ 150°C (TJ)
MCAC017N10YLQ-TP

MCAC017N10YLQ-TP

N-CHANNEL MOSFET,DFN5060

Micro Commercial Co

5,000 -
MCAC017N10YLQ-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 20 nC @ 10 V 100 V ±20V 1170 pF @ 50 V AEC-Q101 - DFN5060 Automotive 71W (Tj) -55°C ~ 175°C
TPH5R60APL,L1Q

TPH5R60APL,L1Q

PB-F POWER MOSFET TRANSISTOR N-C

Toshiba Semiconductor and Storage

4,942 -
TPH5R60APL,L1Q

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 5.6mOhm @ 30A, 10V Surface Mount 2.5V @ 500µA 52 nC @ 10 V 100 V ±20V 4300 pF @ 50 V - - 8-SOP Advance (5x5) - 960mW (Ta), 132W (Tc) 175°C
SQJ162EP-T1_GE3

SQJ162EP-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix

2,950 -
SQJ162EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 166A (Tc) 10V 5mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 51 nC @ 10 V 60 V ±20V 3930 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
DI2A2N100D1K

DI2A2N100D1K

MOSFET, DPAK, N-CH, 1000V, 2.2A

Diotec Semiconductor

2,480 -
DI2A2N100D1K

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 6.8Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 1000 V ±25V 510 pF @ 25 V - - TO-252 (DPAK) - 30W (Tc) -55°C ~ 150°C (TJ)
DMTH10H009LFG-7

DMTH10H009LFG-7

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

1,180 -
DMTH10H009LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 55A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 100 V ±20V 2361 pF @ 50 V - - POWERDI3333-8 - 2.5W (Ta) -55°C ~ 175°C (TJ)
DMP4011SK3-13

DMP4011SK3-13

MOSFET P-CH 40V 14A/74A TO252

Diodes Incorporated

2,490 -
DMP4011SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 14A (Ta), 74A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V Surface Mount 2.5V @ 250µA 52 nC @ 10 V 40 V ±20V 2747 pF @ 20 V - - TO-252 (DPAK) - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ)
PJQ5460A_R2_00001

PJQ5460A_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,576 -
PJQ5460A_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.6A (Ta), 20A (Tc) 4.5V, 10V 42mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 10 V 60 V ±20V 685 pF @ 25 V - - DFN5060-8 - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
DMTH4004SPSQ-13

DMTH4004SPSQ-13

MOSFET N-CH 40V 31A PWRDI5060

Diodes Incorporated

2,394 -
DMTH4004SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 100A (Tc) 10V 2.7mOhm @ 90A, 10V Surface Mount 4V @ 250µA 68.6 nC @ 10 V 40 V ±20V 4305 pF @ 25 V - - PowerDI5060-8 - 3.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
DMP4011SK3Q-13

DMP4011SK3Q-13

MOSFET P-CH 40V 14A/74A TO252

Diodes Incorporated

1,700 -
DMP4011SK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 14A (Ta), 74A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V Surface Mount 2.5V @ 250µA 52 nC @ 10 V 40 V ±20V 2747 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ)
MCACL1D6N06YL-TP

MCACL1D6N06YL-TP

MOSFET N-CH 60 230A DFN5060-C

Micro Commercial Co

3,958 -
MCACL1D6N06YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 230A (Tc) 4.5V, 10V 1.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 119 nC @ 10 V 60 V ±20V 6180 pF @ 30 V - - DFN5060-C - 208W (Tj) -55°C ~ 150°C (TJ)
FDB4020P

FDB4020P

MOSFET P-CH 20V 16A TO263AB

onsemi

9,065 -
FDB4020P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 2.5V, 4.5V 80mOhm @ 8A, 4.5V Surface Mount 1V @ 250µA 13 nC @ 4.5 V 20 V ±8V 665 pF @ 10 V - - TO-263 (D2PAK) - 37.5W (Tc) -65°C ~ 175°C (TJ)
FQP15P12

FQP15P12

MOSFET P-CH 120V 15A TO220-3

onsemi

7,449 -
FQP15P12

数据表

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 200mOhm @ 7.5A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 120 V ±30V 1100 pF @ 25 V - - TO-220-3 - 100W (Tc) -55°C ~ 175°C (TJ)
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

onsemi

8,052 -
FQP44N08

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 34mOhm @ 22A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 80 V ±25V 1430 pF @ 25 V - - TO-220-3 - 127W (Tc) -55°C ~ 175°C (TJ)
IRF7726

IRF7726

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies

7,912 -
IRF7726

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V Surface Mount 2.5V @ 250µA 69 nC @ 10 V 30 V ±20V 2204 pF @ 25 V - - Micro8™ - 1.79W (Ta) -55°C ~ 150°C (TJ)
IRFU010

IRFU010

MOSFET N-CH 50V 8.2A TO251AA

Vishay Siliconix

5,403 -
IRFU010

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.2A (Tc) 10V 200mOhm @ 4.2A, 10V Through Hole 4V @ 250µA 10 nC @ 10 V 50 V ±20V 250 pF @ 25 V - - TO-251AA - 25W (Tc) -55°C ~ 150°C (TJ)
AOTF12N65

AOTF12N65

MOSFET N-CH 650V 12A TO220-3F

Alpha & Omega Semiconductor Inc.

9,282 -
AOTF12N65

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 720mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 48 nC @ 10 V 650 V ±30V 2150 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
STP95N4F3

STP95N4F3

MOSFET N-CH 40V 80A TO220AB

STMicroelectronics

4,201 -
STP95N4F3

数据表

STripFET™ III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 6.2mOhm @ 40A, 10V Through Hole 4V @ 250µA 54 nC @ 10 V 40 V ±20V 2200 pF @ 25 V - - TO-220 - 110W (Tc) -55°C ~ 175°C (TJ)
MSJU06N80A-TP

MSJU06N80A-TP

MOSFET

Micro Commercial Co

7,161 -
MSJU06N80A-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 950mOhm @ 3.8A, 10V Surface Mount 4.5V @ 250µA 14 nC @ 10 V 800 V ±20V 502 pF @ 25 V - - TO-252 (DPAK) - 56.8W (Tj) -55°C ~ 150°C (TJ)
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