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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AOSP21357 MOSFET P-CH 30V 16A 8SOIC Alpha & Omega Semiconductor Inc.	2,213	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	16A (Ta)	4.5V, 10V	8.5mOhm @ 16A, 10V	Surface Mount	2.3V @ 250µA	70 nC @ 10 V	30 V	±25V	2830 pF @ 15 V	-	-	8-SOIC	-	3.1W (Ta)	-55°C ~ 150°C (TJ)
NVMFS6H864NLWFT1G MOSFET N-CH 80V 7A/22A 5DFN onsemi	1,480	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta), 22A (Tc)	4.5V, 10V	29mOhm @ 5A, 10V	Surface Mount, Wettable Flank	2V @ 20µA	9 nC @ 10 V	80 V	±20V	431 pF @ 40 V	AEC-Q101	-	5-DFNW (4.9x5.9) (8-SOFL-WF)	Automotive	3.5W (Ta), 33W (Tc)	-55°C ~ 175°C (TJ)
NVTFS016N06CTAG MOSFET N-CH 60V 8A/32A 8WDFN onsemi	1,000	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta), 32A (Tc)	10V	16.3mOhm @ 5A, 10V	Surface Mount	4V @ 25µA	6.9 nC @ 10 V	60 V	±20V	489 pF @ 30 V	AEC-Q101	-	8-WDFN (3.3x3.3)	Automotive	2.5W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)
TSM060NB06LCZ C0G 60V, 111A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,980	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 111A (Tc)	4.5V, 10V	6mOhm @ 13A, 10V	Through Hole	2.5V @ 250µA	107 nC @ 10 V	60 V	±20V	6273 pF @ 30 V	-	-	TO-220	-	2W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
IRF9Z14LPBF MOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix	5,845	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	10V	500mOhm @ 4A, 10V	Through Hole	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	I2PAK	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRFR5505 MOSFET P-CH 55V 18A DPAK Infineon Technologies	7,554	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
R6502END3TL1 650V 1.7A TO-252, LOW-NOISE POWE Rohm Semiconductor	2,500	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	4Ohm @ 600mA, 10V	Surface Mount	4V @ 40µA	6.5 nC @ 10 V	650 V	±20V	65 pF @ 25 V	-	-	TO-252	-	26W (Tc)	150°C (TJ)
DMT15H035SCT MOSFET BVDSS: 101V~250V TO220AB Diodes Incorporated	2,232	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	35mOhm @ 20A, 10V	Through Hole	4V @ 250µA	25 nC @ 10 V	150 V	±20V	1600 pF @ 75 V	-	-	TO-220-3	-	2.2W (Ta)	-55°C ~ 150°C (TJ)
TSM3N80CZ C0G MOSFET N-CHANNEL 800V 3A TO220 Taiwan Semiconductor Corporation	2,502	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	4.2Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	800 V	±30V	696 pF @ 25 V	-	-	TO-220	-	94W (Tc)	-55°C ~ 150°C (TJ)
TSM85N10CZ C0G MOSFET N-CHANNEL 100V 81A TO220 Taiwan Semiconductor Corporation	3,811	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	81A (Tc)	10V	10mOhm @ 40A, 10V	Through Hole	4V @ 250µA	154 nC @ 10 V	100 V	±20V	3900 pF @ 30 V	-	-	TO-220	-	210W (Tc)	-55°C ~ 150°C (TJ)
IRFBC30ALPBF MOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix	9,553	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	Through Hole	4.5V @ 250µA	23 nC @ 10 V	600 V	±30V	510 pF @ 25 V	-	-	I2PAK	-	74W (Tc)	-55°C ~ 150°C (TJ)
STP30N20 MOSFET N-CH 200V 30A TO220AB STMicroelectronics	2,329	-	询价单	数据表	STripFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	-	75mOhm @ 15A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	200 V	-	1597 pF @ 25 V	-	-	TO-220	-	125W (Tc)	-55°C ~ 150°C (TJ)
DMT40M9LPS-13 MOSFET BVDSS: 31V-40V POWERDI506 Diodes Incorporated	4,988	-	询价单	数据表	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL195N4F7AG DISCRETE STMicroelectronics	7,953	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD3P01BATTL1 PCH -100V -10A POWER MOSFET: RD3 Rohm Semiconductor	2,414	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	6V, 10V	240mOhm @ 5A, 10V	Surface Mount	4V @ 1mA	19.4 nC @ 10 V	100 V	±20V	660 pF @ 50 V	-	-	TO-252	-	25W (Ta)	150°C (TJ)
R6004KNXC7G 600V 4A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor	952	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	980mOhm @ 1.5A, 10V	Through Hole	5V @ 1mA	10.2 nC @ 10 V	600 V	±20V	280 pF @ 25 V	-	-	TO-220FM	-	40W (Tc)	150°C (TJ)
NVATS5A108PLZT4G MOSFET P-CHANNEL 40V 77A ATPAK onsemi	6,800	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	77A (Ta)	4.5V, 10V	10.4mOhm @ 35A, 10V	Surface Mount	2.6V @ 1mA	79.5 nC @ 10 V	40 V	±20V	3850 pF @ 20 V	AEC-Q101	-	ATPAK	Automotive	72W (Tc)	-55°C ~ 175°C (TJ)
IPAN65R650CEXKSA1 MOSFET N-CH 650V 10.1A TO220 Infineon Technologies	462	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10.1A (Tc)	10V	650mOhm @ 2.1A, 10V	Through Hole	3.5V @ 210µA	23 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TO220-FP	-	28W (Tc)	-40°C ~ 150°C (TJ)
IRF7426TR MOSFET N-CH 20V 8SO Infineon Technologies	8,143	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	-	-	Surface Mount	-	-	20 V	-	-	-	-	8-SO	-	-	-
TSM60NC620CI C0G 600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	3,990	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	620mOhm @ 2.4A, 10V	Through Hole	5V @ 1mA	15 nC @ 10 V	600 V	±20V	506 pF @ 300 V	-	-	ITO-220	-	46W (Tc)	-55°C ~ 150°C (TJ)

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