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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP13N60DM2

STP13N60DM2

MOSFET N-CH 600V 11A TO220

STMicroelectronics

5,203 -
STP13N60DM2

数据表

MDmesh™ DM2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 365mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 19 nC @ 10 V 600 V ±25V 730 pF @ 100 V - - TO-220 - 110W (Tc) -55°C ~ 150°C (TJ)
STP20N20

STP20N20

MOSFET N-CH 200V 18A TO220AB

STMicroelectronics

2,530 -
STP20N20

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 125mOhm @ 10A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 200 V ±20V 940 pF @ 25 V - - TO-220 - 90W (Tc) -50°C ~ 150°C (TJ)
IRF624PBF

IRF624PBF

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix

3,043 -
IRF624PBF

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 250 V ±20V 260 pF @ 25 V - - TO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
IRF624PBF-BE3

IRF624PBF-BE3

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix

5,626 -
IRF624PBF-BE3

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) - 1.1Ohm @ 2.6A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 250 V ±20V 260 pF @ 25 V - - TO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
NDS9405

NDS9405

MOSFET P-CH 20V 4.3A 8SOIC

onsemi

8,999 -
NDS9405

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 4.5V, 10V 100mOhm @ 2A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 20 V ±20V 1425 pF @ 10 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPB04N03LA

IPB04N03LA

MOSFET N-CH 25V 80A TO263-3

Infineon Technologies

2,118 -
IPB04N03LA

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.9mOhm @ 55A, 10V Surface Mount 2V @ 60µA 32 nC @ 5 V 25 V ±20V 3877 pF @ 15 V - - PG-TO263-3-2 - 107W (Tc) -55°C ~ 175°C (TJ)
SPP77N06S2-12

SPP77N06S2-12

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

5,593 -
SPP77N06S2-12

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 12mOhm @ 38A, 10V Through Hole 4V @ 93µA 60 nC @ 10 V 55 V ±20V 2350 pF @ 25 V - - PG-TO220-3-1 - 158W (Tc) -55°C ~ 175°C (TJ)
SPP80N06S2L-11

SPP80N06S2L-11

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

3,612 -
SPP80N06S2L-11

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V Through Hole 2V @ 93µA 80 nC @ 10 V 55 V ±20V 2650 pF @ 25 V - - PG-TO220-3-1 - 158W (Tc) -55°C ~ 175°C (TJ)
IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

7,283 -
IPD85P04P4L06ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 85A (Tc) 4.5V, 10V 6.4mOhm @ 85A, 10V Surface Mount 2.2V @ 150µA 104 nC @ 10 V 40 V ±16V 6580 pF @ 25 V AEC-Q101 - PG-TO252-3-313 Automotive 88W (Tc) -55°C ~ 175°C (TJ)
STD10NM50N

STD10NM50N

MOSFET N-CH 500V 7A DPAK

STMicroelectronics

7,576 -
STD10NM50N

数据表

MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 630mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 17 nC @ 10 V 500 V ±25V 450 pF @ 50 V - - DPAK - 70W (Tc) 150°C (TJ)
SI4413DDY-T1-GE3

SI4413DDY-T1-GE3

MOSFET P-CHANNEL 8SOIC

Vishay Siliconix

6,035 -
SI4413DDY-T1-GE3

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 4.5V, 10V 5.5mOhm @ 10A, 10V Surface Mount 1.6V @ 250µA 114 nC @ 10 V - - 4780 pF @ 15 V - - 8-SOIC - - -55°C ~ 125°C
SQJ401EP-T2_GE3

SQJ401EP-T2_GE3

MOSFET P-CH 12V 32A PPAK SO-8

Vishay Siliconix

5,448 -
SQJ401EP-T2_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V Surface Mount 1.5V @ 250µA 164 nC @ 4.5 V 12 V ±8V 10015 pF @ 6 V AEC-Q101 - PowerPAK® SO-8 Automotive 83W (Tc) -55°C ~ 175°C (TJ)
SQJ431EP-T2_GE3

SQJ431EP-T2_GE3

MOSFET P-CH 200V 12A PPAK SO-8

Vishay Siliconix

7,134 -
SQJ431EP-T2_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 6V, 10V 213mOhm @ 3.8A, 10V Surface Mount 3.5V @ 250µA 106 nC @ 10 V 200 V ±20V 4355 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 83W (Tc) -55°C ~ 175°C (TJ)
IRFU5505

IRFU5505

MOSFET P-CH 55V 18A IPAK

Infineon Technologies

9,328 -
IRFU5505

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 110mOhm @ 9.6A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 55 V ±20V 650 pF @ 25 V - - IPAK (TO-251AA) - 57W (Tc) -55°C ~ 150°C (TJ)
NTP27N06

NTP27N06

MOSFET N-CH 60V 27A TO220AB

onsemi

7,238 -
NTP27N06

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Ta) 10V 46mOhm @ 13.5A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 60 V ±20V 1015 pF @ 25 V - - TO-220 - 88.2W (Tc) -55°C ~ 175°C (TJ)
NVTFWS020N06CTAG

NVTFWS020N06CTAG

MOSFET N-CH 60V 7A/27A 8WDFN

onsemi

1,500 -
NVTFWS020N06CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta), 27A (Tc) 10V 20.3mOhm @ 4A, 10V Surface Mount 4V @ 20µA 5.8 nC @ 10 V 60 V ±20V 355 pF @ 30 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 2.5W (Ta), 31W (Tc) -55°C ~ 175°C (TJ)
MCAC3D8N04YHQ-TP

MCAC3D8N04YHQ-TP

N-CHANNEL MOSFET,DFN5060

Micro Commercial Co

5,000 -
MCAC3D8N04YHQ-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 3.8mOhm @ 39A, 10V Surface Mount 3.8V @ 250µA 23 nC @ 10 V 40 V ±20V 1745 pF @ 20 V AEC-Q101 - DFN5060 Automotive 83W (Tj) -55°C ~ 175°C (TJ)
DI015N25D1

DI015N25D1

MOSFET DPAK N 250V 0.2OHM 175C

Diotec Semiconductor

2,500 -
DI015N25D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 255mOhm @ 15A, 10V Surface Mount 4.5V @ 250µA 8.9 nC @ 10 V 250 V ±20V 475 pF @ 125 V - - TO-252 (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
DMT31M6LPS-13

DMT31M6LPS-13

MOSFET N-CH 30V 35.8A PWRDI5060

Diodes Incorporated

2,445 -
DMT31M6LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.8A (Ta) 4.5V, 10V 1.35mOhm @ 20A, 10V Surface Mount 3V @ 250µA 123 nC @ 10 V 30 V ±20V 7019 pF @ 15 V AEC-Q101 - PowerDI5060-8 (Type K) Automotive 2.5W (Ta) -55°C ~ 150°C (TJ)
ZXMN4A06KTC

ZXMN4A06KTC

MOSFET N-CH 40V 7.2A TO252-3

Diodes Incorporated

2,230 -
ZXMN4A06KTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.2A (Ta) 4.5V, 10V 50mOhm @ 4.5A, 10V Surface Mount 1V @ 250µA 17.1 nC @ 10 V 40 V ±20V 827 pF @ 20 V - - TO-252-3 - 2.15W (Ta) -55°C ~ 150°C (TJ)
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