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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN2R0-40YLBX

PSMN2R0-40YLBX

PSMN2R0-40YLB/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
PSMN2R0-40YLBX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 2.1mOhm @ 25A, 10V Surface Mount 2.05V @ 1mA 87 nC @ 10 V 40 V ±20V 6416 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 166W (Tc) -55°C ~ 175°C (TJ)
PSMN2R2-40YSBX

PSMN2R2-40YSBX

PSMN2R2-40YSB/SOT669/LFPAK

Nexperia USA Inc.

1,485 -
PSMN2R2-40YSBX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 2.2mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 69 nC @ 10 V 40 V ±20V 5173 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 166W (Tc) -55°C ~ 175°C (TJ)
RCJ100N25TL

RCJ100N25TL

MOSFET N-CH 250V 10A LPT

Rohm Semiconductor

990 -
RCJ100N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 320mOhm @ 5A, 10V Surface Mount 5V @ 1mA 26.5 nC @ 10 V 250 V ±30V 1440 pF @ 25 V - - LPTS - 1.56W (Ta), 85W (Tc) 150°C (TJ)
MCB011N10YL-TP

MCB011N10YL-TP

N-CHANNEL MOSFET,D2-PAK

Micro Commercial Co

1,396 -
MCB011N10YL-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 63A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V Surface Mount 3V @ 250µA 29.8 nC @ 10 V 100 V ±20V 1404 pF @ 50 V - - D2PAK - 100W (Tj) -55°C ~ 175°C (TJ)
NVTFS4C13NWFTWG

NVTFS4C13NWFTWG

MOSFET N-CH 30V 14A 8WDFN

onsemi

45,000 -
NVTFS4C13NWFTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 9.4mOhm @ 30A, 10V Surface Mount 2.1V @ 250µA 15.2 nC @ 10 V 30 V ±20V 770 pF @ 15 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3W (Ta), 26W (Tc) -55°C ~ 175°C (TJ)
TSM040N03CP ROG

TSM040N03CP ROG

MOSFET N-CHANNEL 30V 90A TO252

Taiwan Semiconductor Corporation

10,000 -
TSM040N03CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V Surface Mount 2.5V @ 250µA 53 nC @ 4.5 V 30 V ±20V 2200 pF @ 25 V - - TO-252 (DPAK) - 88W (Tc) 150°C (TJ)
NTMFS5C423NLT3G

NTMFS5C423NLT3G

MOSFET N-CH 40V 150A 5DFN

onsemi

4,988 -
NTMFS5C423NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
PHB29N08T,118

PHB29N08T,118

MOSFET N-CH 75V 27A D2PAK

Nexperia USA Inc.

3,734 -
PHB29N08T,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 11V 50mOhm @ 14A, 11V Surface Mount 5V @ 2mA 19 nC @ 10 V 75 V ±30V 810 pF @ 25 V - - D2PAK - 88W (Tc) -55°C ~ 175°C (TJ)
XP10TN135H

XP10TN135H

MOSFET N-CH 100V 8.1A TO252

YAGEO XSEMI

1,000 -
XP10TN135H

数据表

XP10TN135 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.1A (Tc) 4.5V, 10V 135mOhm @ 5A, 10V Surface Mount 3V @ 250µA 17.6 nC @ 10 V 100 V ±20V 928 pF @ 50 V - - TO-252 - 2W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ)
NTMFS5C442NLT3G

NTMFS5C442NLT3G

MOSFET N-CH 40V 27A/130A 5DFN

onsemi

4,999 -
NTMFS5C442NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 130A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.1W (Ta), 69W (Tc) -55°C ~ 175°C (TJ)
IPD90N06S4L06ATMA2

IPD90N06S4L06ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies

3,357 -
IPD90N06S4L06ATMA2

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V Surface Mount 2.2V @ 40µA 75 nC @ 10 V 60 V ±16V 5680 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 79W (Tc) -55°C ~ 175°C (TJ)
NVTFWS024N06CTAG

NVTFWS024N06CTAG

MOSFET N-CH 60V 7A/24A 8WDFN

onsemi

1,500 -
NVTFWS024N06CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta), 24A (Tc) 10V 22.6mOhm @ 3A, 10V Surface Mount 4V @ 20µA 5.7 nC @ 10 V 60 V ±20V 333 pF @ 30 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 2.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ)
XP4N4R2H

XP4N4R2H

MOSFET N-CH 40V 75A TO252

YAGEO XSEMI

990 -
XP4N4R2H

数据表

XP4N4R2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.2mOhm @ 40A, 10V Surface Mount 3V @ 250µA 44.8 nC @ 4.5 V 40 V ±20V 4000 pF @ 20 V - - TO-252 - 2W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
PJQ5431E-AU_R2_006A1

PJQ5431E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,798 -
PJQ5431E-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 18A (Ta), 86A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 68 nC @ 10 V 30 V ±25V 3040 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
NVMYS2D9N04CLTWG

NVMYS2D9N04CLTWG

MOSFET N-CH 40V 27A/110A LFPAK4

onsemi

2,720 -
NVMYS2D9N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V Surface Mount 2V @ 60µA 35 nC @ 10 V 40 V ±20V 2100 pF @ 20 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
R6004RND3TL1

R6004RND3TL1

600V 4A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

2,700 -
R6004RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 15V 1.73Ohm @ 2A, 15V Surface Mount 7V @ 450µA 10.5 nC @ 15 V 600 V ±30V 230 pF @ 100 V - - TO-252 - 60W (Tc) 150°C (TJ)
TK5P60W5,RVQ

TK5P60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,000 -
TK5P60W5,RVQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 10V 990mOhm @ 2.3A, 10V Surface Mount 4.5V @ 230µA 11.5 nC @ 10 V 600 V ±30V 370 pF @ 300 V - - DPAK - 60W (Tc) 150°C
TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

1,895 -
TJ10S04M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V Surface Mount 3V @ 1mA 19 nC @ 10 V 40 V +10V, -20V 930 pF @ 10 V - - DPAK+ - 27W (Tc) 175°C (TJ)
STD3NK50ZT4

STD3NK50ZT4

MOSFET N-CH 500V 2.3A DPAK

STMicroelectronics

1,870 -
STD3NK50ZT4

数据表

SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.3A (Tc) 10V 3.3Ohm @ 1.15A, 10V Surface Mount 4.5V @ 50µA 15 nC @ 10 V 500 V ±30V 280 pF @ 25 V - - DPAK - 45W (Tc) -55°C ~ 150°C (TJ)
TK5P53D(T6RSS-Q)

TK5P53D(T6RSS-Q)

MOSFET N-CH 525V 5A DPAK

Toshiba Semiconductor and Storage

1,710 -
TK5P53D(T6RSS-Q)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 4.4V @ 1mA 11 nC @ 10 V 525 V ±30V 540 pF @ 25 V - - DPAK - 80W (Tc) 150°C (TJ)
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