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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVTFWS007N08HLTAG

NVTFWS007N08HLTAG

80V T8 IN U8FL HEFET PACK

onsemi

1,490 -
NVTFWS007N08HLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.4A (Ta), 71A (Tc) 4.5V, 10V 7mOhm @ 16A, 10V Surface Mount 3V @ 270µA 32.5 nC @ 10 V 80 V ±20V 1810 pF @ 40 V AEC-Q101 - 8-WDFNW (3.3x3.3) Automotive 3.3W (Ta), 79W (Tc) -55°C ~ 175°C (TJ)
SIHF9630STRL-GE3

SIHF9630STRL-GE3

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix

783 -
SIHF9630STRL-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 200 V ±20V 700 pF @ 25 V - - TO-263 (D2PAK) - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
DIT120N08

DIT120N08

MOSFET TO220AB N 80V 0.0049OHM

Diotec Semiconductor

152 -
DIT120N08

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 6mOhm @ 40A, 10V Through Hole 4V @ 250µA 163 nC @ 10 V 80 V ±20V 6500 pF @ 25 V - - TO-220AB - 220W (Tc) -55°C ~ 175°C (TJ)
PJD60N06SA-AU_L2_006A1

PJD60N06SA-AU_L2_006A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD60N06SA-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD50N10SA-AU_L2_006A1

PJD50N10SA-AU_L2_006A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2,920 -
PJD50N10SA-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVMFS5H663NLWFT1G

NVMFS5H663NLWFT1G

MOSFET N-CH 60V 16.2A/67A 5DFN

onsemi

8,585 -
NVMFS5H663NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.2A (Ta), 67A (Tc) 4.5V, 10V 7.2mOhm @ 20A, 10V Surface Mount 2V @ 56µA 17 nC @ 10 V 60 V ±20V 1131 pF @ 30 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 63W (Tc) -55°C ~ 175°C (TJ)
PSMN012-100YSFX

PSMN012-100YSFX

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,029 -
PSMN012-100YSFX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Tc) 7V, 10V 11.8mOhm @ 20A, 10V Surface Mount 4V @ 1mA 46 nC @ 10 V 100 V ±20V 2800 pF @ 50 V - - LFPAK56, Power-SO8 - 130W (Tc) -55°C ~ 175°C (TJ)
NTTYS009N08HLTWG

NTTYS009N08HLTWG

T8 80V N-CH LL IN LFPAK33 PACKAG

onsemi

2,922 -
NTTYS009N08HLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 58A (Tc) 4.5V, 10V 8.6mOhm @ 10A, 10V Surface Mount 2V @ 70µA 24 nC @ 10 V 80 V ±20V 1402 pF @ 40 V - - 8-LFPAK - 3.2W (Ta), 73W (Tc) -55°C ~ 175°C (TJ)
IPB70N04S406ATMA1

IPB70N04S406ATMA1

MOSFET N-CH 40V 70A TO263-3

Infineon Technologies

1,816 -
IPB70N04S406ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 6.2mOhm @ 70A, 10V Surface Mount 4V @ 26µA 32 nC @ 10 V 40 V ±20V 2550 pF @ 25 V - - PG-TO263-3-2 - 58W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C680NLWFT1G

NVMFS5C680NLWFT1G

MOSFET N-CH 60V 8.1A/21A 5DFN

onsemi

1,460 -
NVMFS5C680NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.1A (Ta), 21A (Tc) 4.5V, 10V 27.5mOhm @ 7.5A, 10V Surface Mount, Wettable Flank 2.2V @ 13µA 5.8 nC @ 10 V 60 V ±20V 330 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.4W (Ta), 24W (Tc) -55°C ~ 175°C (TJ)
MCAC7D5N10YL-TP

MCAC7D5N10YL-TP

MOSFET N-CH 100 75A DFN5060

Micro Commercial Co

9,989 -
MCAC7D5N10YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 39 nC @ 10 V 100 V ±20V 2460 pF @ 50 V - - DFN5060 - 89W (Tj) -55°C ~ 150°C (TJ)
IAUC120N06S5N032ATMA1

IAUC120N06S5N032ATMA1

MOSFET_)40V 60V)

Infineon Technologies

6,947 -
IAUC120N06S5N032ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tj) 7V, 10V 3.23mOhm @ 60A, 10V Surface Mount 3.4V @ 44µA 47 nC @ 10 V 60 V ±20V 3446 pF @ 30 V - - PG-TDSON-8-34 - 94W (Tc) -55°C ~ 175°C (TJ)
SIR4409DP-T1-RE3

SIR4409DP-T1-RE3

P-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

5,204 -
SIR4409DP-T1-RE3

数据表

- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17.2A (Ta), 60.6A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA 126 nC @ 10 V 40 V ±20V 5670 pF @ 20 V - - PowerPAK® SO-8 - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
NVMYS008N08LHTWG

NVMYS008N08LHTWG

T8 80V LL LFPAK

onsemi

3,000 -
NVMYS008N08LHTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 59A (Tc) 4.5V, 10V 8.8mOhm @ 10A, 10V Surface Mount 2V @ 70µA 25 nC @ 10 V 80 V ±20V 1420 pF @ 40 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.7W (Ta), 73W (Tc) -55°C ~ 175°C (TJ)
DMNH10H028SPS-13

DMNH10H028SPS-13

MOSFET N-CH 100V 40A PWRDI5060-8

Diodes Incorporated

2,200 -
DMNH10H028SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 28mOhm @ 20A, 10V Surface Mount 4V @ 250µA 36 nC @ 10 V 100 V ±20V 2245 pF @ 50 V - - PowerDI5060-8 - 1.6W (Ta) -55°C ~ 175°C (TJ)
TK35S04K3L(T6L1,NQ

TK35S04K3L(T6L1,NQ

MOSFET N-CH 40V 35A DPAK

Toshiba Semiconductor and Storage

1,650 -
TK35S04K3L(T6L1,NQ

数据表

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 6V, 10V 10.3mOhm @ 17.5A, 10V Surface Mount 3V @ 1mA 28 nC @ 10 V 40 V ±20V 1370 pF @ 10 V - - DPAK+ - 58W (Tc) 175°C (TJ)
DMP3004SSS-13

DMP3004SSS-13

MOSFET P-CH 30V 16.2A 8SO T&R 2

Diodes Incorporated

2,317 -
DMP3004SSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 16.2A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 156 nC @ 10 V 30 V ±20V 7693 pF @ 15 V - - 8-SO - 1.2W (Ta) -55°C ~ 150°C (TJ)
TK6P53D(T6RSS-Q)

TK6P53D(T6RSS-Q)

MOSFET N-CH 525V 6A DPAK

Toshiba Semiconductor and Storage

1,988 -
TK6P53D(T6RSS-Q)

数据表

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.3Ohm @ 3A, 10V Surface Mount 4.4V @ 1mA 12 nC @ 10 V 525 V ±30V 600 pF @ 25 V - - DPAK - 100W (Tc) 150°C (TJ)
TK7P50D(T6RSS-Q)

TK7P50D(T6RSS-Q)

MOSFET N-CH 500V 7A DPAK

Toshiba Semiconductor and Storage

1,939 -
TK7P50D(T6RSS-Q)

数据表

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V Surface Mount 4.4V @ 1mA 12 nC @ 10 V 500 V ±30V 600 pF @ 25 V - - DPAK - 100W (Tc) 150°C (TJ)
TSM035NB04LCZ C0G

TSM035NB04LCZ C0G

40V, 157A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

1,884 -
TSM035NB04LCZ C0G

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 157A (Tc) 4.5V, 10V 3.5mOhm @ 18A, 10V Through Hole 2.5V @ 250µA 111 nC @ 10 V 40 V ±20V 6350 pF @ 20 V - - TO-220 - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
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