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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SCT2160KEC

SCT2160KEC

SICFET N-CH 1200V 22A TO247

Rohm Semiconductor

6,269 -
SCT2160KEC

数据表

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 22A (Tc) 18V 208mOhm @ 7A, 18V Through Hole 4V @ 2.5mA 62 nC @ 18 V 1200 V +22V, -6V 1200 pF @ 800 V - - TO-247 - 165W (Tc) 175°C (TJ)
RCD100N19TL

RCD100N19TL

MOSFET N-CH 190V 10A CPT3

Rohm Semiconductor

1,108 -
RCD100N19TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 52 nC @ 10 V 190 V ±20V 2000 pF @ 25 V - - CPT3 - 850mW (Ta), 20W (Tc) 150°C (TJ)
R6507ENXC7G

R6507ENXC7G

650V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

998 -
R6507ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 665mOhm @ 2.4A, 10V Through Hole 4V @ 200µA 20 nC @ 10 V 650 V ±20V 390 pF @ 25 V - - TO-220FM - 46W (Tc) 150°C (TJ)
R6025JNZC8

R6025JNZC8

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor

13 -
R6025JNZC8

数据表

- TO-3P-3 Full Pack Bag Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 15V 182mOhm @ 12.5A, 15V Through Hole 7V @ 4.5mA 57 nC @ 15 V 600 V ±30V 1900 pF @ 100 V - - TO-3PF - 85W (Tc) -55°C ~ 150°C (TJ)
R6046ANZC8

R6046ANZC8

MOSFET N-CH 600V 46A TO3PF

Rohm Semiconductor

2,293 -
R6046ANZC8

数据表

- TO-3P-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 46A (Tc) 10V 81mOhm @ 23A, 10V Through Hole 4.5V @ 1mA 150 nC @ 10 V 600 V ±30V 6000 pF @ 25 V - - TO-3PF - 130W (Tc) 150°C (TJ)
R5011FNJTL

R5011FNJTL

MOSFET N-CH 500V 11A LPT

Rohm Semiconductor

1,965 -
R5011FNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 520mOhm @ 5.5A, 10V Surface Mount 4V @ 1mA 30 nC @ 10 V 500 V ±30V 950 pF @ 25 V - - LPTS - 50W (Tc) 150°C (TJ)
ZDX080N50

ZDX080N50

MOSFET N-CH 500V 8A TO220FM

Rohm Semiconductor

374 -
ZDX080N50

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4A, 10V Through Hole 4V @ 1mA 23 nC @ 10 V 500 V ±30V 1120 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
R6046FNZC8

R6046FNZC8

MOSFET N-CH 600V 46A TO3PF

Rohm Semiconductor

2,832 -
R6046FNZC8

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 46A (Tc) 10V 93mOhm @ 23A, 10V Through Hole 5V @ 1mA 150 nC @ 10 V 600 V ±30V 6100 pF @ 25 V - - TO-3PF - 130W (Tc) 150°C (TJ)
SCT4013DTW

SCT4013DTW

SIC FET TOP SIDE COOLING

Rohm Semiconductor

2,829 -
SCT4013DTW

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT2080KEC

SCT2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor

8,007 -
SCT2080KEC

数据表

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 40A (Tc) 18V 117mOhm @ 10A, 18V Through Hole 4V @ 4.4mA 106 nC @ 18 V 1200 V +22V, -6V 2080 pF @ 800 V - - TO-247 - 262W (Tc) 175°C (TJ)
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