| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6509KND3TL1HIGH-SPEED SWITCHING, NCH 650V 9 Rohm Semiconductor |
2,390 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | Surface Mount | 5V @ 230µA | 16.5 nC @ 10 V | 650 V | ±20V | 540 pF @ 25 V | - | - | TO-252 | - | 94W (Tc) | 150°C (TJ) |
|
R6515KNXC7G650V 15A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
998 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | Through Hole | 5V @ 430µA | 27.5 nC @ 10 V | 650 V | ±20V | 1050 pF @ 25 V | - | - | TO-220FM | - | 60W (Tc) | 150°C (TJ) |
|
R6015KNXC7G600V 15A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
989 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | Through Hole | 5V @ 1mA | 27.5 nC @ 10 V | 600 V | ±20V | 1050 pF @ 25 V | - | - | TO-220FM | - | 60W (Tc) | 150°C (TJ) |
|
R6004JND3TL1MOSFET N-CH 600V 4A TO252 Rohm Semiconductor |
2,495 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | Surface Mount | 7V @ 450µA | 10.5 nC @ 15 V | 600 V | ±30V | 260 pF @ 100 V | - | - | TO-252 | - | 60W (Tc) | 150°C (TJ) |
|
RS6G100BGTB1NCH 40V 100A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,413 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | Surface Mount | 2.5V @ 1mA | 24 nC @ 10 V | 40 V | ±20V | 1510 pF @ 20 V | - | - | 8-HSOP | - | 3W (Ta), 59W (Tc) | 150°C (TJ) |
|
RX3L07BGNC16NCH 60V 70A, TO-220AB, POWER MOS Rohm Semiconductor |
1,314 | - |
|
数据表 |
- | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 7.2mOhm @ 70A, 10V | Through Hole | 2.5V @ 50µA | 55 nC @ 10 V | 60 V | ±20V | 2600 pF @ 30 V | - | - | TO-220AB | - | 96W (Tc) | 150°C (TJ) |
|
RQ1A060ZPTRMOSFET P-CH 12V 6A TSMT8 Rohm Semiconductor |
11,921 | - |
|
数据表 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 1.5V, 4.5V | 23mOhm @ 6A, 4.5V | Surface Mount | 1V @ 1mA | 34 nC @ 4.5 V | 12 V | ±10V | 2800 pF @ 6 V | - | - | TSMT8 | - | 700mW (Ta) | 150°C (TJ) |
|
SCT2450KECSICFET N-CH 1200V 10A TO247 Rohm Semiconductor |
6,475 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | Through Hole | 4V @ 900µA | 27 nC @ 18 V | 1200 V | +22V, -6V | 463 pF @ 800 V | - | - | TO-247 | - | 85W (Tc) | 175°C (TJ) |
|
RCJ330N25TLMOSFET N-CH 250V 33A LPTS Rohm Semiconductor |
6,743 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 105mOhm @ 16.5A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 250 V | ±30V | 4500 pF @ 25 V | - | - | LPTS | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) |
|
R6024KNZ1C9MOSFET N-CHANNEL 600V 24A TO247 Rohm Semiconductor |
3 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | Through Hole | 5V @ 1mA | 45 nC @ 10 V | 600 V | ±20V | 2000 pF @ 25 V | - | - | TO-247 | - | 245W (Tc) | -55°C ~ 150°C (TJ) |