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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6509KND3TL1

R6509KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 9

Rohm Semiconductor

2,390 -
R6509KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 585mOhm @ 2.8A, 10V Surface Mount 5V @ 230µA 16.5 nC @ 10 V 650 V ±20V 540 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
R6515KNXC7G

R6515KNXC7G

650V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

998 -
R6515KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Through Hole 5V @ 430µA 27.5 nC @ 10 V 650 V ±20V 1050 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
R6015KNXC7G

R6015KNXC7G

600V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

989 -
R6015KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 5V @ 1mA 27.5 nC @ 10 V 600 V ±20V 1050 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
R6004JND3TL1

R6004JND3TL1

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor

2,495 -
R6004JND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 15V 1.43Ohm @ 2A, 15V Surface Mount 7V @ 450µA 10.5 nC @ 15 V 600 V ±30V 260 pF @ 100 V - - TO-252 - 60W (Tc) 150°C (TJ)
RS6G100BGTB1

RS6G100BGTB1

NCH 40V 100A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,413 -
RS6G100BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.4mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 24 nC @ 10 V 40 V ±20V 1510 pF @ 20 V - - 8-HSOP - 3W (Ta), 59W (Tc) 150°C (TJ)
RX3L07BGNC16

RX3L07BGNC16

NCH 60V 70A, TO-220AB, POWER MOS

Rohm Semiconductor

1,314 -
RX3L07BGNC16

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 7.2mOhm @ 70A, 10V Through Hole 2.5V @ 50µA 55 nC @ 10 V 60 V ±20V 2600 pF @ 30 V - - TO-220AB - 96W (Tc) 150°C (TJ)
RQ1A060ZPTR

RQ1A060ZPTR

MOSFET P-CH 12V 6A TSMT8

Rohm Semiconductor

11,921 -
RQ1A060ZPTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 6A (Ta) 1.5V, 4.5V 23mOhm @ 6A, 4.5V Surface Mount 1V @ 1mA 34 nC @ 4.5 V 12 V ±10V 2800 pF @ 6 V - - TSMT8 - 700mW (Ta) 150°C (TJ)
SCT2450KEC

SCT2450KEC

SICFET N-CH 1200V 10A TO247

Rohm Semiconductor

6,475 -
SCT2450KEC

数据表

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 10A (Tc) 18V 585mOhm @ 3A, 18V Through Hole 4V @ 900µA 27 nC @ 18 V 1200 V +22V, -6V 463 pF @ 800 V - - TO-247 - 85W (Tc) 175°C (TJ)
RCJ330N25TL

RCJ330N25TL

MOSFET N-CH 250V 33A LPTS

Rohm Semiconductor

6,743 -
RCJ330N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 105mOhm @ 16.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 250 V ±30V 4500 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
R6024KNZ1C9

R6024KNZ1C9

MOSFET N-CHANNEL 600V 24A TO247

Rohm Semiconductor

3 -
R6024KNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-247 - 245W (Tc) -55°C ~ 150°C (TJ)
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