| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RTL030P02TRMOSFET P-CH 20V 3A TUMT6 Rohm Semiconductor |
403 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 2.5V, 4.5V | 70mOhm @ 3A, 4.5V | Surface Mount | 2V @ 1mA | 8 nC @ 4.5 V | 20 V | ±12V | 760 pF @ 10 V | - | - | TUMT6 | - | 1W (Ta) | 150°C (TJ) |
|
SCT4062KEHRC111200V, 26A, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
166 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | Through Hole | 4.8V @ 6.45mA | 64 nC @ 18 V | 1200 V | +21V, -4V | 1498 pF @ 800 V | AEC-Q101 | - | TO-247N | Automotive | 115W | 175°C (TJ) |
|
SCT3060ALGC11SICFET N-CH 650V 39A TO247N Rohm Semiconductor |
462 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | Through Hole | 5.6V @ 6.67mA | 58 nC @ 18 V | 650 V | +22V, -4V | 852 pF @ 500 V | - | - | TO-247N | - | 165W (Tc) | 175°C (TJ) |
|
SCT4045DRC15750V, 45M, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
3,459 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | Through Hole | 4.8V @ 8.89mA | 63 nC @ 18 V | 750 V | +21V, -4V | 1460 pF @ 500 V | - | - | TO-247-4L | - | 115W | 175°C (TJ) |
|
R6047ENZ4C13MOSFET N-CH 600V 47A TO247 Rohm Semiconductor |
594 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | Through Hole | 4V @ 1mA | 145 nC @ 10 V | 600 V | ±20V | 3850 pF @ 25 V | - | - | TO-247 | - | 481W (Tc) | 150°C (TJ) |
|
SCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
4,717 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | Through Hole | 4.8V @ 6.45mA | 64 nC @ 18 V | 1200 V | +21V, -4V | 1498 pF @ 800 V | - | - | TO-247N | - | 115W | 175°C (TJ) |
|
SCT4036KW7TL1200V, 40A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
413 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 40A (Tj) | 18V | 47mOhm @ 21A, 18V | Surface Mount | 4.8V @ 11.1mA | 91 nC @ 18 V | 1200 V | +21V, -4V | 2335 pF @ 800 V | - | - | TO-263-7L | - | 150W | 175°C (TJ) |
|
RSR015P03TLMOSFET P-CH 30V 1.5A TSMT3 Rohm Semiconductor |
5,791 | - |
|
数据表 |
- | SC-96 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 4V, 10V | 235mOhm @ 1.5A, 10V | Surface Mount | - | 2.6 nC @ 5 V | 30 V | ±20V | 190 pF @ 10 V | - | - | TSMT3 | - | 1W (Ta) | - |
|
RRQ030P03TRMOSFET P-CH 30V 3A TSMT6 Rohm Semiconductor |
1,722 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 4V, 10V | 75mOhm @ 3A, 10V | Surface Mount | 2.5V @ 1mA | 12 nC @ 10 V | 30 V | ±20V | 480 pF @ 10 V | - | - | TSMT6 (SC-95) | - | 600mW (Ta) | 150°C (TJ) |
|
RND030N20TLMOSFET N-CH 200V 3A CPT3 Rohm Semiconductor |
2,863 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 870mOhm @ 1.5A, 10V | Surface Mount | 5.2V @ 1mA | 6.7 nC @ 10 V | 200 V | ±30V | 270 pF @ 25 V | - | - | CPT3 | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) |