富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS6L120BGTB1

RS6L120BGTB1

NCH 60V 120A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,079 -
RS6L120BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 2.7mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 51 nC @ 10 V 60 V ±20V 3520 pF @ 30 V - - 8-HSOP - 104W (Tc) 150°C (TJ)
R6535ENZ4C13

R6535ENZ4C13

650V 35A TO-247, LOW-NOISE POWER

Rohm Semiconductor

539 -
R6535ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 115mOhm @ 18.1A, 10V Through Hole 4V @ 1.21mA 110 nC @ 10 V 650 V ±20V 2600 pF @ 25 V - - TO-247G - 379W (Tc) 150°C (TJ)
R6035ENZ4C13

R6035ENZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

533 -
R6035ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 4V @ 1mA 110 nC @ 10 V 600 V ±20V 2720 pF @ 25 V - - TO-247 - 379W (Tc) 150°C (TJ)
R6535KNZ4C13

R6535KNZ4C13

650V 35A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

264 -
R6535KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 115mOhm @ 18.1A, 10V Through Hole 5V @ 1.21mA 72 nC @ 10 V 650 V ±20V 3000 pF @ 25 V - - TO-247G - 379W (Tc) 150°C (TJ)
RSS090N03FRATB

RSS090N03FRATB

MOSFET N-CH 30V 9A 8SOP

Rohm Semiconductor

9,907 -
RSS090N03FRATB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 4V, 10V 16mOhm @ 9A, 10V Surface Mount 2.5V @ 1mA 15 nC @ 5 V 30 V ±20V 810 pF @ 10 V - - 8-SOP - 1.4W (Ta) -55°C ~ 150°C (TJ)
R6030KNZC8

R6030KNZC8

MOSFET N-CHANNEL 600V 30A TO3PF

Rohm Semiconductor

3,480 -
R6030KNZC8

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-3PF - 86W (Tc) -55°C ~ 150°C (TJ)
ES6U1T2R

ES6U1T2R

MOSFET P-CH 12V 1.3A 6WEMT

Rohm Semiconductor

8,330 -
ES6U1T2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.3A (Ta) 1.5V, 4.5V 260mOhm @ 1.3A, 4.5V Surface Mount 1V @ 1mA 2.4 nC @ 4.5 V 12 V ±10V 290 pF @ 6 V - Schottky Diode (Isolated) 6-WEMT - 700mW (Ta) 150°C (TJ)
R6012ANX

R6012ANX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor

2,404 -
R6012ANX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 420mOhm @ 6A, 10V Through Hole 4.5V @ 1mA 35 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
ES6U3T2CR

ES6U3T2CR

MOSFET N-CH 30V 1.4A WEMT6

Rohm Semiconductor

7,960 -
ES6U3T2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Ta) 4V, 10V 240mOhm @ 1.4A, 10V Surface Mount 2.5V @ 1mA 1.4 nC @ 5 V 30 V ±20V 70 pF @ 10 V - Schottky Diode (Isolated) 6-WEMT - 800mW (Ta) 150°C (TJ)
R8009KNXC7G

R8009KNXC7G

HIGH-SPEED SWITCHING NCH 800V 9A

Rohm Semiconductor

999 -
R8009KNXC7G

数据表

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 600mOhm @ 4.5A, 10V Through Hole 4.5V @ 5mA 27 nC @ 10 V 800 V ±20V 900 pF @ 100 V - - TO-220FM - 59W (Tc) 150°C (TJ)
共 1014 条记录«上一页1... 5354555657585960...102下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户