ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RDD050N20TL MOSFET N-CH 200V 5A CPT3 Rohm Semiconductor	20	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	720mOhm @ 2.5A, 10V	Surface Mount	4V @ 1mA	9.3 nC @ 10 V	200 V	±30V	292 pF @ 10 V	-	-	CPT3	-	20W (Tc)	-
RRH100P03TB1 MOSFET P-CH 30V 10A 8SOP Rohm Semiconductor	8,300	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	4V, 10V	12.6mOhm @ 10A, 10V	Surface Mount	2.5V @ 1mA	39 nC @ 5 V	30 V	±20V	3600 pF @ 10 V	-	-	8-SOP	-	650mW (Ta)	150°C (TJ)
SCT2280KEGC11 1200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor	1,664	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	14A (Tc)	18V	364mOhm @ 4A, 18V	Through Hole	4V @ 1.4mA	36 nC @ 18 V	1200 V	+22V, -6V	667 pF @ 800 V	-	-	TO-247N	-	108W (Tc)	175°C
RTR025N03TL MOSFET N-CH 30V 2.5A TSMT3 Rohm Semiconductor	2,470	-	询价单	数据表	-	SC-96	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	2.5V, 4.5V	92mOhm @ 2.5A, 4.5V	Surface Mount	1.5V @ 1mA	4.6 nC @ 4.5 V	30 V	12V	220 pF @ 10 V	-	-	TSMT3	-	1W (Ta)	150°C (TJ)
RCD080N25TL MOSFET N-CH 250V 8A CPT3 Rohm Semiconductor	3,325	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	300mOhm @ 4A, 10V	Surface Mount	5V @ 1mA	25 nC @ 10 V	250 V	±30V	1440 pF @ 25 V	-	-	CPT3	-	850mW (Ta), 20W (Tc)	150°C (TJ)
RSS070N05FRATB MOSFET N-CH 45V 7A 8SOP Rohm Semiconductor	4,894	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	4V, 10V	25mOhm @ 7A, 10V	Surface Mount	2.5V @ 1mA	16.8 nC @ 5 V	45 V	±20V	1000 pF @ 10 V	AEC-Q101	-	8-SOP	Automotive	2W (Ta)	150°C (TJ)
SCT3120AW7TL SICFET N-CH 650V 21A TO263-7 Rohm Semiconductor	788	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	-	156mOhm @ 6.7A, 18V	Surface Mount	5.6V @ 3.33mA	38 nC @ 18 V	650 V	+22V, -4V	460 pF @ 500 V	-	-	TO-263-7	-	100W	175°C (TJ)
SCT3160KLHRC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	592	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	18V	208mOhm @ 5A, 18V	Through Hole	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	103W	175°C (TJ)
SCT2450KEHRC11 1200V, 10A, THD, SILICON-CARBIDE Rohm Semiconductor	427	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	10A (Tc)	18V	585mOhm @ 3A, 18V	Through Hole	4V @ 900µA	27 nC @ 18 V	1200 V	+22V, -6V	463 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	85W (Tc)	175°C (TJ)
R5021ANX MOSFET N-CH 500V 21A TO220FM Rohm Semiconductor	3,914	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	210mOhm @ 10.5A, 10V	Through Hole	4.5V @ 1mA	64 nC @ 10 V	500 V	±30V	2300 pF @ 25 V	-	-	TO-220FM	-	50W (Tc)	150°C (TJ)

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