富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6030KNXC7

R6030KNXC7

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

990 -
R6030KNXC7

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-220FM - 86W (Tc) -55°C ~ 150°C (TJ)
RSE002P03TL

RSE002P03TL

MOSFET P-CH 30V 200MA EMT3

Rohm Semiconductor

2,734 -
RSE002P03TL

数据表

- SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200mA (Ta) 4V, 10V 1.4Ohm @ 200mA, 10V Surface Mount 2.5V @ 1mA - 30 V ±20V 30 pF @ 10 V - - EMT3 - 150mW (Ta) 150°C (TJ)
2SK2887TL

2SK2887TL

MOSFET N-CH 200V 3A CPT3

Rohm Semiconductor

8,503 -
2SK2887TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 900mOhm @ 1.5A, 10V Surface Mount 4V @ 1mA 8.5 nC @ 10 V 200 V ±30V 230 pF @ 10 V - - CPT3 - 20W (Tc) 150°C (TJ)
R6020JNJGTL

R6020JNJGTL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor

1,787 -
R6020JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 15V 234mOhm @ 10A, 15V Surface Mount 7V @ 3.5mA 45 nC @ 15 V 600 V ±30V 1500 pF @ 100 V - - LPTS - 252W (Tc) -55°C ~ 150°C (TJ)
RSS075P03TB

RSS075P03TB

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor

4,387 -
RSS075P03TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V Surface Mount 2.5V @ 1mA 30 nC @ 5 V 30 V ±20V 2900 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
RCJ510N25TL

RCJ510N25TL

MOSFET N-CH 250V 51A LPTS

Rohm Semiconductor

4,965 -
RCJ510N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 51A (Tc) 10V 65mOhm @ 25.5A, 10V Surface Mount 5V @ 1mA 120 nC @ 10 V 250 V ±30V 7000 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
RJ1P12BBDTLL

RJ1P12BBDTLL

MOSFET N-CH 100V 120A LPTL

Rohm Semiconductor

848 -
RJ1P12BBDTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 5.8mOhm @ 50A, 10V Surface Mount 4V @ 2.5mA 80 nC @ 10 V 100 V ±20V 4170 pF @ 50 V - - LPTL - 178W (Tc) 150°C (TJ)
R6520ENXC7G

R6520ENXC7G

650V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

958 -
R6520ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 4V @ 630µA 61 nC @ 10 V 650 V ±20V 1400 pF @ 25 V - - TO-220FM - 68W (Tc) 150°C (TJ)
R6055VNZ4C13

R6055VNZ4C13

600V 55A TO-247, PRESTOMOS WITH

Rohm Semiconductor

586 -
R6055VNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V Through Hole 6.5V @ 1.5mA 80 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-247 - 543W (Tc) 150°C (TJ)
SCT3120ALHRC11

SCT3120ALHRC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor

2,204 -
SCT3120ALHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 21A (Tc) 18V 156mOhm @ 6.7A, 18V Through Hole 5.6V @ 3.33mA 38 nC @ 18 V 650 V +22V, -4V 460 pF @ 500 V AEC-Q101 - TO-247N Automotive 103W 175°C (TJ)
共 1014 条记录«上一页1... 5455565758596061...102下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户