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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS6P100BHTB1

RS6P100BHTB1

NCH 100V 100A, HSOP8, POWER MOSF

Rohm Semiconductor

3,367 -
RS6P100BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 5.9mOhm @ 90A, 10V Surface Mount 4V @ 1mA 45 nC @ 10 V 100 V ±20V 2880 pF @ 50 V - - 8-HSOP - 104W (Tc) 150°C (TJ)
R6004ENDTL

R6004ENDTL

MOSFET N-CH 600V 4A CPT3

Rohm Semiconductor

11 -
R6004ENDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 980mOhm @ 1.5A, 10V Surface Mount 4V @ 1mA 15 nC @ 10 V 600 V ±20V 250 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
RS6R060BHTB1

RS6R060BHTB1

NCH 150V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

4,755 -
RS6R060BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 6V, 10V 21.8mOhm @ 60A, 10V Surface Mount 4V @ 1mA 46 nC @ 10 V 150 V ±20V 2750 pF @ 75 V - - 8-HSOP - 104W (Tc) 150°C (TJ)
R8006KNXC7G

R8006KNXC7G

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

766 -
R8006KNXC7G

数据表

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 900mOhm @ 3A, 10V Through Hole 4.5V @ 4mA 22 nC @ 10 V 800 V ±20V 650 pF @ 100 V - - TO-220FM - 52W (Tc) 150°C (TJ)
RW1C026ZPT2CR

RW1C026ZPT2CR

MOSFET P-CH 20V 2.5A 6WEMT

Rohm Semiconductor

1,845 -
RW1C026ZPT2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 1.5V, 4.5V 70mOhm @ 2.5A, 4.5V Surface Mount 1V @ 1mA 10 nC @ 4.5 V 20 V ±10V 1250 pF @ 10 V - - 6-WEMT - 700mW (Ta) 150°C (TJ)
R6020KNJTL

R6020KNJTL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor

3,399 -
R6020KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Surface Mount 5V @ 1mA 40 nC @ 10 V 600 V ±20V 1550 pF @ 25 V - - LPTS - 231W (Tc) -55°C ~ 150°C (TJ)
R6020ENX

R6020ENX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor

482 -
R6020ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 10A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±20V 1400 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
RRS075P03FRATB

RRS075P03FRATB

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor

7,261 -
RRS075P03FRATB

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V Surface Mount 2.5V @ 1mA 21 nC @ 5 V 30 V ±20V 1900 pF @ 10 V - - 8-SOP - 2W (Ta) -55°C ~ 150°C (TJ)
RCX330N25

RCX330N25

MOSFET N-CH 250V 33A TO220FM

Rohm Semiconductor

308 -
RCX330N25

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V - Through Hole - - 250 V ±30V - - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
RRH075P03TB1

RRH075P03TB1

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor

4,273 -
RRH075P03TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V Surface Mount 2.5V @ 1mA 21 nC @ 5 V 30 V ±20V 1900 pF @ 10 V - - 8-SOP - 650mW (Ta) 150°C (TJ)
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