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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RSJ400N10FRATL

RSJ400N10FRATL

MOSFET N-CH 100V 40A LPTS

Rohm Semiconductor

414 -
RSJ400N10FRATL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4V, 10V 27mOhm @ 40A, 10V Surface Mount 2.5V @ 1mA 90 nC @ 10 V 100 V ±20V 3600 pF @ 25 V AEC-Q101 - LPTS Automotive 1.35W (Ta), 50W (Tc) 150°C (TJ)
R6009JNJGTL

R6009JNJGTL

MOSFET N-CH 600V 9A LPTS

Rohm Semiconductor

3,000 -
R6009JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 15V 585mOhm @ 4.5A, 15V Surface Mount 7V @ 1.38mA 22 nC @ 15 V 600 V ±30V 645 pF @ 100 V - - LPTS - 125W (Tc) -55°C ~ 150°C (TJ)
RSL020P03TR

RSL020P03TR

MOSFET P-CH 30V 2A TUMT6

Rohm Semiconductor

8,261 -
RSL020P03TR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 120mOhm @ 2A, 10V Surface Mount - 3.9 nC @ 5 V 30 V ±20V 350 pF @ 10 V - - TUMT6 - 1W (Ta) -
RS1E320GNTB

RS1E320GNTB

MOSFET N-CH 30V 32A 8HSOP

Rohm Semiconductor

8,863 -
RS1E320GNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 38A (Ta), 80A (Tc) 4.5V, 10V 1.9mOhm @ 32A, 10V Surface Mount 2.5V @ 1mA 42.8 nC @ 10 V 30 V ±20V 2850 pF @ 15 V - - 8-HSOP - 3W (Ta), 34W (Tc) 150°C (TJ)
R6011ENX

R6011ENX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor

476 -
R6011ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Through Hole 4V @ 1mA 32 nC @ 10 V 600 V ±20V 670 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
RSD200N10TL

RSD200N10TL

MOSFET N-CH 100V 20A CPT3

Rohm Semiconductor

9,106 -
RSD200N10TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4V, 10V 52mOhm @ 10A, 10V Surface Mount 2.5V @ 1mA 48.5 nC @ 10 V 100 V ±20V 2200 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
RSH110N03TB1

RSH110N03TB1

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor

9,937 -
RSH110N03TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) - 10.7mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 17 nC @ 5 V 30 V - 1300 pF @ 10 V - - 8-SOP - 2W (Ta) -
RW1A020ZPT2R

RW1A020ZPT2R

MOSFET P-CH 12V 2A WEMT6

Rohm Semiconductor

6,720 -
RW1A020ZPT2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 1.5V, 4.5V 105mOhm @ 2A, 4.5V Surface Mount 1V @ 1mA 6.5 nC @ 4.5 V 12 V ±10V 770 pF @ 6 V - - 6-WEMT - 400mW (Ta) 150°C (TJ)
RSD100N10TL

RSD100N10TL

MOSFET N-CH 100V 10A CPT3

Rohm Semiconductor

2,024 -
RSD100N10TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 133mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 18 nC @ 10 V 100 V ±20V 700 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
RCX511N25

RCX511N25

MOSFET N-CH 250V 51A TO220FM

Rohm Semiconductor

462 -
RCX511N25

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 51A (Tc) 10V 65mOhm @ 25.5A, 10V Through Hole 5V @ 1mA 120 nC @ 10 V 250 V ±30V 7000 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
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