ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 36

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RTQ040P02TR MOSFET P-CH 20V 4A TSMT6 Rohm Semiconductor	4,715	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	2.5V, 4.5V	50mOhm @ 4A, 4.5V	Surface Mount	2V @ 1mA	12.2 nC @ 4.5 V	20 V	±12V	1350 pF @ 10 V	-	-	TSMT6 (SC-95)	-	1.25W (Ta)	150°C (TJ)
RX3G18BBGC16 NCH 40V 180A, TO-220AB, POWER MO Rohm Semiconductor	937	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	1.47mOhm @ 90A, 10V	Through Hole	2.5V @ 1mA	210 nC @ 10 V	40 V	±20V	13200 pF @ 20 V	-	-	TO-220AB	-	192W (Tc)	150°C (TJ)
SCT3160KW7HRTL 1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	1,990	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	18V	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	AEC-Q101	-	TO-263-7L	Automotive	-	175°C (TJ)
SCT3160KWATL 1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tj)	18V	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	-	-	TO-263-7LA	-	-	175°C (TJ)
RX3R10BBHC16 NCH 150V 105A, TO-220AB, POWER M Rohm Semiconductor	988	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	6V, 10V	8.8mOhm @ 50A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	150 V	±20V	7550 pF @ 75 V	-	-	TO-220AB	-	181W (Tc)	150°C (TJ)
R6086YNZC17 NCH 600V 33A, TO-3PF, POWER MOSF Rohm Semiconductor	300	-	询价单	数据表	-	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V, 12V	44mOhm @ 17A, 12V	Through Hole	6V @ 4.6mA	110 nC @ 10 V	600 V	±30V	5100 pF @ 100 V	-	-	TO-3PF	-	114W (Tc)	150°C (TJ)
SCT3160KWAHRTL 1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	18V	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	AEC-Q101	-	TO-263-7LA	Automotive	-	175°C (TJ)
SCT3105KRC15 1200V, 24A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	370	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tj)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	-	-	TO-247-4L	-	134W	175°C (TJ)
SCT3105KRHRC15 1200V, 24A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	440	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	134W	175°C (TJ)
RSQ025P03TR MOSFET P-CH 30V 2.5A TSMT6 Rohm Semiconductor	6,665	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	4V, 10V	110mOhm @ 2.5A, 10V	Surface Mount	2.5V @ 1mA	4.4 nC @ 5 V	30 V	±20V	320 pF @ 10 V	-	-	TSMT6 (SC-95)	-	1.25W (Ta)	150°C (TJ)

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