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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6049YNX3C16

R6049YNX3C16

NCH 600V 49A, TO-220AB, POWER MO

Rohm Semiconductor

991 -
R6049YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V, 12V 82mOhm @ 11A, 12V Through Hole 6V @ 2.9mA 65 nC @ 10 V 600 V ±30V 2940 pF @ 100 V - - TO-220AB - 448W (Tc) 150°C (TJ)
R6022YNZ4C13

R6022YNZ4C13

NCH 600V 22A, TO-247, POWER MOSF

Rohm Semiconductor

600 -
R6022YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V Through Hole 6V @ 1.8mA 33 nC @ 10 V 600 V ±30V 1400 pF @ 100 V - - TO-247G - 205W (Tc) 150°C (TJ)
R6014YNX3C16

R6014YNX3C16

NCH 600V 14A, TO-220AB, POWER MO

Rohm Semiconductor

988 -
R6014YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V, 12V 260mOhm @ 5A, 12V Through Hole 6V @ 1.4mA 20 nC @ 10 V 600 V ±30V 890 pF @ 100 V - - TO-220AB - 132W (Tc) 150°C (TJ)
RX3G07BBGC16

RX3G07BBGC16

NCH 40V 70A, TO-220AB, POWER MO

Rohm Semiconductor

930 -
RX3G07BBGC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 3mOhm @ 70A, 10V Through Hole 2.5V @ 1mA 56 nC @ 10 V 40 V ±20V 3540 pF @ 20 V - - TO-220AB - 89W (Tc) 150°C (TJ)
RX3L07BBGC16

RX3L07BBGC16

NCH 60V 70A, TO-220AB, POWER MO

Rohm Semiconductor

920 -
RX3L07BBGC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 4.6mOhm @ 70A, 10V Through Hole 2.5V @ 1mA 47 nC @ 10 V 60 V ±20V 2950 pF @ 30 V - - TO-220AB - 89W (Tc) 150°C (TJ)
RX3P07BBHC16

RX3P07BBHC16

NCH 100V 70A, TO-220AB, POWER MO

Rohm Semiconductor

968 -
RX3P07BBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 8.4mOhm @ 70A, 10V Through Hole 4V @ 1mA 38 nC @ 10 V 100 V ±20V 2410 pF @ 50 V - - TO-220AB - 89W (Tc) 150°C (TJ)
RX3R05BBHC16

RX3R05BBHC16

NCH 150V 50A, TO-220AB, POWER MO

Rohm Semiconductor

500 -
RX3R05BBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V Through Hole 4V @ 1mA 37 nC @ 10 V 150 V ±20V 2150 pF @ 75 V - - TO-220AB - 89W (Tc) 150°C (TJ)
R6061YNXC7G

R6061YNXC7G

NCH 600V 26A, TO-220FM, POWER MO

Rohm Semiconductor

970 -
R6061YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V, 12V 60mOhm @ 13A, 12V Through Hole 6V @ 3.5mA 76 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-220FM - 100W (Tc) 150°C (TJ)
QS5U26TR

QS5U26TR

MOSFET P-CH 20V 1.5A TSMT5

Rohm Semiconductor

8,084 -
QS5U26TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V Surface Mount 2V @ 1mA 4.2 nC @ 4.5 V 20 V ±12V 325 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C (TJ)
RTQ025P02TR

RTQ025P02TR

MOSFET P-CH 20V 2.5A TSMT6

Rohm Semiconductor

4,280 -
RTQ025P02TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 100mOhm @ 2.5A, 4.5V Surface Mount 2V @ 1mA 6.4 nC @ 4.5 V 20 V ±12V 580 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
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