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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RX3L18BBGC16

RX3L18BBGC16

NCH 60V 180A, TO-220AB, POWER MO

Rohm Semiconductor

954 -
RX3L18BBGC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 1.84mOhm @ 90A, 10V Through Hole 2.5V @ 1mA 160 nC @ 10 V 60 V ±20V 11000 pF @ 30 V - - TO-220AB - 192W (Tc) 150°C (TJ)
R6027YNZ4C13

R6027YNZ4C13

NCH 600V 27A, TO-247G, POWER MOS

Rohm Semiconductor

597 -
R6027YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V Through Hole 6V @ 2mA 40 nC @ 10 V 600 V ±30V 1670 pF @ 100 V - - TO-247G - 245W (Tc) 150°C (TJ)
RCX120N20

RCX120N20

MOSFET N-CH 200V 12A TO220FM

Rohm Semiconductor

2,975 -
RCX120N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 325mOhm @ 6A, 10V Through Hole 5.25V @ 1mA 15 nC @ 10 V 200 V ±30V 740 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
R6038YNX3C16

R6038YNX3C16

600V 38A TO-220AB, HIGH-SPEED SW

Rohm Semiconductor

1,000 -
R6038YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V, 12V 96mOhm @ 9A, 12V Through Hole 6V @ 2.5mA 50 nC @ 10 V 600 V ±30V 2350 pF @ 100 V - - TO-220AB - 348W (Tc) 150°C (TJ)
R6049YNXC7G

R6049YNXC7G

NCH 600V 22A, TO-220FM, POWER MO

Rohm Semiconductor

975 -
R6049YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V, 12V 82mOhm @ 11A, 12V Through Hole 6V @ 2.9mA 65 nC @ 10 V 600 V ±30V 2940 pF @ 100 V - - TO-220FM - 90W (Tc) 150°C (TJ)
RJ1P10BBHTL1

RJ1P10BBHTL1

NCH 100V 105A, TO-263AB, POWER M

Rohm Semiconductor

730 -
RJ1P10BBHTL1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 105A (Tc) 6V, 10V 3mOhm @ 90A, 10V Surface Mount 4V @ 1mA 135 nC @ 10 V 100 V ±20V 8600 pF @ 50 V - - TO-263AB - 189W (Tc) 150°C (TJ)
R6077VNZC17

R6077VNZC17

600V 29A TO-3PF, PRESTOMOS WITH

Rohm Semiconductor

420 -
R6077VNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V, 15V 51mOhm @ 23A, 15V Through Hole 6.5V @ 1.9mA 108 nC @ 10 V 600 V ±30V 5200 pF @ 100 V - - TO-3PF - 113W (Tc) 150°C (TJ)
R6049YNZ4C13

R6049YNZ4C13

NCH 600V 49A, TO-247G, POWER MOS

Rohm Semiconductor

590 -
R6049YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V, 12V 82mOhm @ 11A, 12V Through Hole 6V @ 2.9mA 65 nC @ 10 V 600 V ±30V 2940 pF @ 100 V - - TO-247G - 448W (Tc) 150°C (TJ)
RJ1R10BBHTL1

RJ1R10BBHTL1

NCH 150V 105A, TO-263AB, POWER M

Rohm Semiconductor

790 -
RJ1R10BBHTL1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 105A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V Surface Mount 4V @ 1mA 130 nC @ 10 V 150 V ±20V 7750 pF @ 75 V - - TO-263AB - 181W (Tc) 150°C (TJ)
R6038YNZ4C13

R6038YNZ4C13

600V 38A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

569 -
R6038YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tj) 10V, 12V 96mOhm @ 9A, 12V Through Hole 6V @ 2.5mA 50 nC @ 10 V 600 V ±30V 2350 pF @ 100 V - - TO-247 - 348W (Tc) 150°C (TJ)
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