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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS6G120BHTB1

RS6G120BHTB1

NCH 40V 210A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6G120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 1.38mOhm @ 90A, 10V Surface Mount 4V @ 1mA 67 nC @ 10 V 40 V ±20V 4790 pF @ 20 V - - 8-HSOP - 3W (Ta), 104W (Tc) 150°C (TJ)
RS6L120BHTB1

RS6L120BHTB1

NCH 60V 150A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6L120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 2.7mOhm @ 90A, 10V Surface Mount 4V @ 1mA 51 nC @ 10 V 60 V ±20V 4080 pF @ 30 V - - 8-HSOP - 3W (Ta), 104W (Tc) 150°C (TJ)
RSR020P03TL

RSR020P03TL

MOSFET P-CH 30V 2A TSMT3

Rohm Semiconductor

7,611 -
RSR020P03TL

数据表

- SC-96 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 120mOhm @ 2A, 10V Surface Mount - 4.3 nC @ 5 V 30 V ±20V 370 pF @ 10 V - - TSMT3 - 1W (Ta) -
RTR020P02TL

RTR020P02TL

MOSFET P-CH 20V 2A TSMT3

Rohm Semiconductor

8,420 -
RTR020P02TL

数据表

- SC-96 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2A (Ta) 2.5V, 4.5V 135mOhm @ 2A, 4.5V Surface Mount 2V @ 1mA 4.9 nC @ 4.5 V 20 V ±12V 430 pF @ 10 V - - TSMT3 - 1W (Ta) 150°C (TJ)
RD3G07BBGTL1

RD3G07BBGTL1

NCH 40V 70A, TO-252, POWER MOSF

Rohm Semiconductor

474 -
RD3G07BBGTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 2.3mOhm @ 70A, 10V Surface Mount 2.5V @ 1mA 56 nC @ 10 V 40 V ±20V 3540 pF @ 20 V - - TO-252 - 89W (Tc) 150°C (TJ)
R6014YND3TL1

R6014YND3TL1

NCH 600V 14A, TO-252, POWER MOSF

Rohm Semiconductor

2,331 -
R6014YND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V, 12V 260mOhm @ 5A, 12V Surface Mount 6V @ 1.4mA 20 nC @ 10 V 600 V ±30V 890 pF @ 100 V - - TO-252 - 132W (Tc) 150°C (TJ)
RD3R05BBHTL1

RD3R05BBHTL1

NCH 150V 50A, TO-252, POWER MOSF

Rohm Semiconductor

2,370 -
RD3R05BBHTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V Surface Mount 4V @ 1mA 37 nC @ 10 V 150 V ±20V 2150 pF @ 75 V - - TO-252 - 89W (Tc) 150°C (TJ)
R6022YNX3C16

R6022YNX3C16

NCH 600V 22A, TO-220AB, POWER MO

Rohm Semiconductor

995 -
R6022YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V Through Hole 6V @ 1.8mA 33 nC @ 10 V 600 V ±30V 1400 pF @ 100 V - - TO-220AB - 205W (Tc) 150°C (TJ)
RJ1P04BBHTL1

RJ1P04BBHTL1

NCH 100V 40A, TO-263AB, POWER MO

Rohm Semiconductor

796 -
RJ1P04BBHTL1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 8.8mOhm @ 40A, 10V Surface Mount 4V @ 1mA 38 nC @ 10 V 100 V ±20V 2410 pF @ 50 V - - TO-263AB - 89W (Tc) 150°C (TJ)
RX3P10BBHC16

RX3P10BBHC16

NCH 100V 100A, TO-220AB, POWER M

Rohm Semiconductor

995 -
RX3P10BBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.3mOhm @ 90A, 10V Through Hole 4V @ 1mA 135 nC @ 10 V 100 V ±20V 8600 pF @ 50 V - - TO-220AB - 189W (Tc) 150°C (TJ)
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