| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6086YNZ4C13NCH 600V 86A, TO-247, POWER MOSF Rohm Semiconductor |
521 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 86A (Tc) | 10V, 12V | 44mOhm @ 17A, 12V | Through Hole | 6V @ 4.6mA | 110 nC @ 10 V | 600 V | ±30V | 5100 pF @ 100 V | - | - | TO-247G | - | 781W (Tc) | 150°C (TJ) |
|
SCT3080KRHRC151200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
440 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | Through Hole | 5.6V @ 5mA | 60 nC @ 18 V | 1200 V | +22V, -4V | 785 pF @ 800 V | AEC-Q101 | - | TO-247-4L | Automotive | 165W | 175°C (TJ) |
|
RAL045P01TCRMOSFET P-CH 12V 4.5A TUMT6 Rohm Semiconductor |
6,577 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | Surface Mount | 1V @ 1mA | 40 nC @ 4.5 V | 12 V | -8V | 4200 pF @ 6 V | - | - | TUMT6 | - | 1W (Ta) | 150°C (TJ) |
|
SCT3060ARHRC15650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
446 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | Through Hole | 5.6V @ 6.67mA | 58 nC @ 18 V | 650 V | +22V, -4V | 852 pF @ 500 V | AEC-Q101 | - | TO-247-4L | Automotive | 165W | 175°C (TJ) |
|
SCT3060ARC15650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
427 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 39A (Tj) | 18V | 78mOhm @ 13A, 18V | Through Hole | 5.6V @ 6.67mA | 58 nC @ 18 V | 650 V | +22V, -4V | 852 pF @ 500 V | - | - | TO-247-4L | - | 165W | 175°C (TJ) |
|
SCT3080KRC151200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
365 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 31A (Tj) | 18V | 104mOhm @ 10A, 18V | Through Hole | 5.6V @ 5mA | 60 nC @ 18 V | 1200 V | +22V, -4V | 785 pF @ 800 V | - | - | TO-247-4L | - | 165W | 175°C (TJ) |
|
R6002ENDTLMOSFET N-CH 600V 1.7A CPT3 Rohm Semiconductor |
6,511 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | Surface Mount | 4V @ 1mA | 6.5 nC @ 10 V | 600 V | ±20V | 65 pF @ 25 V | - | - | CPT3 | - | 20W (Tc) | 150°C (TJ) |
|
SCT4026DWATL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
946 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | Surface Mount | 4.8V @ 15.4mA | 94 nC @ 18 V | 750 V | +21V, -4V | 2320 pF @ 500 V | - | - | TO-263-7LA | - | - | 175°C (TJ) |
|
RSQ030P03TRMOSFET P-CH 30V 3A TSMT6 Rohm Semiconductor |
7,473 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 4V, 10V | 80mOhm @ 3A, 10V | Surface Mount | 2.5V @ 1mA | 6 nC @ 5 V | 30 V | ±20V | 440 pF @ 10 V | - | - | TSMT6 (SC-95) | - | 1.25W (Ta) | 150°C (TJ) |
|
SCT4026DWAHRTL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
980 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | Surface Mount | 4.8V @ 15.4mA | 94 nC @ 18 V | 750 V | +21V, -4V | 2320 pF @ 500 V | AEC-Q101 | - | TO-263-7LA | Automotive | - | 175°C (TJ) |