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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6086YNZ4C13

R6086YNZ4C13

NCH 600V 86A, TO-247, POWER MOSF

Rohm Semiconductor

521 -
R6086YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 86A (Tc) 10V, 12V 44mOhm @ 17A, 12V Through Hole 6V @ 4.6mA 110 nC @ 10 V 600 V ±30V 5100 pF @ 100 V - - TO-247G - 781W (Tc) 150°C (TJ)
SCT3080KRHRC15

SCT3080KRHRC15

1200V, 31A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

440 -
SCT3080KRHRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 31A (Tc) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 60 nC @ 18 V 1200 V +22V, -4V 785 pF @ 800 V AEC-Q101 - TO-247-4L Automotive 165W 175°C (TJ)
RAL045P01TCR

RAL045P01TCR

MOSFET P-CH 12V 4.5A TUMT6

Rohm Semiconductor

6,577 -
RAL045P01TCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 1.5V, 4.5V 30mOhm @ 4.5A, 4.5V Surface Mount 1V @ 1mA 40 nC @ 4.5 V 12 V -8V 4200 pF @ 6 V - - TUMT6 - 1W (Ta) 150°C (TJ)
SCT3060ARHRC15

SCT3060ARHRC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

446 -
SCT3060ARHRC15

数据表

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 18V 78mOhm @ 13A, 18V Through Hole 5.6V @ 6.67mA 58 nC @ 18 V 650 V +22V, -4V 852 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 165W 175°C (TJ)
SCT3060ARC15

SCT3060ARC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

427 -
SCT3060ARC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 39A (Tj) 18V 78mOhm @ 13A, 18V Through Hole 5.6V @ 6.67mA 58 nC @ 18 V 650 V +22V, -4V 852 pF @ 500 V - - TO-247-4L - 165W 175°C (TJ)
SCT3080KRC15

SCT3080KRC15

1200V, 31A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

365 -
SCT3080KRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 31A (Tj) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 60 nC @ 18 V 1200 V +22V, -4V 785 pF @ 800 V - - TO-247-4L - 165W 175°C (TJ)
R6002ENDTL

R6002ENDTL

MOSFET N-CH 600V 1.7A CPT3

Rohm Semiconductor

6,511 -
R6002ENDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 3.4Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 6.5 nC @ 10 V 600 V ±20V 65 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
SCT4026DWATL

SCT4026DWATL

750V, 51A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

946 -
SCT4026DWATL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 51A (Tc) 18V 34mOhm @ 29A, 18V Surface Mount 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V - - TO-263-7LA - - 175°C (TJ)
RSQ030P03TR

RSQ030P03TR

MOSFET P-CH 30V 3A TSMT6

Rohm Semiconductor

7,473 -
RSQ030P03TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 3A (Ta) 4V, 10V 80mOhm @ 3A, 10V Surface Mount 2.5V @ 1mA 6 nC @ 5 V 30 V ±20V 440 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
SCT4026DWAHRTL

SCT4026DWAHRTL

750V, 51A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

980 -
SCT4026DWAHRTL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 51A (Tc) 18V 34mOhm @ 29A, 18V Surface Mount 4.8V @ 15.4mA 94 nC @ 18 V 750 V +21V, -4V 2320 pF @ 500 V AEC-Q101 - TO-263-7LA Automotive - 175°C (TJ)
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