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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RCD051N20TL

RCD051N20TL

MOSFET N-CH 200V 5A CPT3

Rohm Semiconductor

7,988 -
RCD051N20TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 760mOhm @ 2.5A, 10V Surface Mount 5.25V @ 1mA 8.3 nC @ 10 V 200 V ±30V 330 pF @ 25 V - - CPT3 - 850mW (Ta), 20W (Tc) 150°C (TJ)
SCT3080ARC15

SCT3080ARC15

650V, 30A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

439 -
SCT3080ARC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 30A (Tj) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 48 nC @ 18 V 650 V +22V, -4V 571 pF @ 500 V - - TO-247-4L - 134W 175°C (TJ)
SCT3080ARHRC15

SCT3080ARHRC15

650V, 30A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

816 -
SCT3080ARHRC15

数据表

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 48 nC @ 18 V 650 V +22V, -4V 571 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 134W 175°C (TJ)
SCT4045DWATL

SCT4045DWATL

750V, 31A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

976 -
SCT4045DWATL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 31A (Tc) 18V 59mOhm @ 17A, 18V Surface Mount 4.8V @ 8.89mA 63 nC @ 18 V 750 V +21V, -4V 1460 pF @ 500 V - - TO-263-7LA - - 175°C (TJ)
SCT4062KWATL

SCT4062KWATL

1200V, 24A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

999 -
SCT4062KWATL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 24A (Tc) 18V 81mOhm @ 12A, 18V Surface Mount 4.8V @ 6.45mA 64 nC @ 18 V 1200 V +21V, -4V 1498 pF @ 800 V - - TO-263-7LA - - 175°C (TJ)
SCT4045DWAHRTL

SCT4045DWAHRTL

750V, 31A, 7-PIN SMD, TRENCH-STR

Rohm Semiconductor

990 -
SCT4045DWAHRTL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 31A (Tc) 18V 59mOhm @ 17A, 18V Surface Mount 4.8V @ 8.89mA 63 nC @ 18 V 750 V +21V, -4V 1460 pF @ 500 V AEC-Q101 - TO-263-7LA Automotive - 175°C (TJ)
SCT4062KWAHRTL

SCT4062KWAHRTL

1200V, 24A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

956 -
SCT4062KWAHRTL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 24A (Tc) 18V 81mOhm @ 12A, 18V Surface Mount 4.8V @ 6.45mA 64 nC @ 18 V 1200 V +21V, -4V 1498 pF @ 800 V AEC-Q101 - TO-263-7LA Automotive 93W 175°C (TJ)
R6061YNZ4C13

R6061YNZ4C13

NCH 600V 61A, TO-247, POWER MOSF

Rohm Semiconductor

588 -
R6061YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 61A (Tc) 10V, 12V 60mOhm @ 13A, 12V Through Hole 6V @ 3.5mA 76 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-247 - 568W (Tc) 150°C (TJ)
US5U29TR

US5U29TR

MOSFET P-CH 20V 1A TUMT5

Rohm Semiconductor

9,822 -
US5U29TR

数据表

- 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 1A (Ta) 2.5V, 4.5V 390mOhm @ 1A, 4.5V Surface Mount 2V @ 1mA 2.1 nC @ 5 V 20 V ±12V 150 pF @ 10 V - Schottky Diode (Isolated) TUMT5 - 1W (Ta) 150°C (TJ)
RZL035P01TR

RZL035P01TR

MOSFET P-CH 12V 3.5A TUMT6

Rohm Semiconductor

9,085 -
RZL035P01TR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 1.5V, 4.5V 36mOhm @ 3.5A, 4.5V Surface Mount 1V @ 1mA - 12 V ±10V 1940 pF @ 6 V - - TUMT6 - 1W (Ta) 150°C (TJ)
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