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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6007KND3TL1

R6007KND3TL1

NCH 600V 7A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,494 -
R6007KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 5V @ 1mA 14.5 nC @ 10 V 600 V ±20V 470 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
RH6E040BGTB1

RH6E040BGTB1

NCH 30V 125A, HSMT8, POWER MOSFE

Rohm Semiconductor

3,000 -
RH6E040BGTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 2.9mOhm @ 40A, 10V Surface Mount 2.5V @ 1mA 30 nC @ 10 V 30 V ±20V 2300 pF @ 15 V - - 8-HSMT (3.2x3) - 2W (Ta), 78W (Tc) 150°C (TJ)
RH6N040BHTB1

RH6N040BHTB1

NCH 80V 40A, HSMT8, POWER MOSFET

Rohm Semiconductor

3,000 -
RH6N040BHTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta), 40A (Tc) 6V, 10V 8.3mOhm @ 40A, 10V Surface Mount 4V @ 1mA 23 nC @ 10 V 80 V ±20V 1530 pF @ 40 V - - 8-HSMT (3.2x3) - 2W (Ta), 59W (Tc) 150°C (TJ)
R6007RND3TL1

R6007RND3TL1

600V 7A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

3,017 -
R6007RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 15V 940mOhm @ 3.5A, 15V Surface Mount 7V @ 1mA 17.5 nC @ 15 V 600 V ±30V 460 pF @ 100 V - - TO-252 - 96W (Tc) 150°C (TJ)
RD3P06BBKHRBTL

RD3P06BBKHRBTL

NCH 100V 59A, TO-252 (DPAK), POW

Rohm Semiconductor

2,945 -
RD3P06BBKHRBTL

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6009KND3TL1

R6009KND3TL1

NCH 600V 9A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,500 -
R6009KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 5V @ 1mA 16.5 nC @ 10 V 600 V ±20V 540 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
2SK2299N

2SK2299N

MOSFET N-CH 450V 7A TO220FN

Rohm Semiconductor

2,337 -
2SK2299N

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 1.1Ohm @ 4A, 10V Through Hole 4V @ 1mA - 450 V ±30V 870 pF @ 10 V - - TO-220FN - 30W (Tc) 150°C (TJ)
R6009RND3TL1

R6009RND3TL1

600V 9A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

2,286 -
R6009RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 15V 665mOhm @ 4.5A, 15V Surface Mount 7V @ 5.5mA 22 nC @ 15 V 600 V ±30V 640 pF @ 100 V - - TO-252 - 125W (Tc) 150°C (TJ)
RD3R02BBHTL1

RD3R02BBHTL1

NCH 150V 20A, TO-252, POWER MOSF

Rohm Semiconductor

2,457 -
RD3R02BBHTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 6V, 10V 81mOhm @ 10A, 10V Surface Mount 4V @ 1mA 12.4 nC @ 10 V 150 V ±20V 730 pF @ 75 V - - TO-252 - 50W (Tc) 150°C (TJ)
RH6R025BHTB1

RH6R025BHTB1

NCH 150V 25A, HSMT8, POWER MOSFE

Rohm Semiconductor

2,679 -
RH6R025BHTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 6V, 10V 60mOhm @ 25A, 10V Surface Mount 4V @ 1mA 16.7 nC @ 10 V 150 V ±20V 1010 pF @ 75 V - - 8-HSMT (3.2x3) - 59W (Tc) 150°C (TJ)
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