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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RMW200N03TB

RMW200N03TB

MOSFET N-CH 30V 20A 8PSOP

Rohm Semiconductor

3 -
RMW200N03TB

数据表

- 8-SMD, Flat Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 4.2mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 29 nC @ 10 V 30 V ±20V 1780 pF @ 15 V - - 8-PSOP - 3W (Ta) 150°C (TJ)
RT1C060UNTR

RT1C060UNTR

MOSFET N-CH 20V 6A 8TSST

Rohm Semiconductor

6,867 -
RT1C060UNTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 6A (Ta) 1.5V, 4.5V 28mOhm @ 6A, 4.5V Surface Mount 1V @ 1mA 11 nC @ 4.5 V 20 V ±10V 870 pF @ 10 V - - 8-TSST - 650mW (Ta) 150°C (TJ)
RD3G08CBLHRBTL

RD3G08CBLHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RD3G08CBLHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 3.2mOhm @ 80A, 10V Surface Mount 4V @ 924µA 42 nC @ 10 V 40 V ±20V 2800 pF @ 20 V AEC-Q101 - TO-252 Automotive 96W (Tc) 175°C (TJ)
RD3G08CBKHRBTL

RD3G08CBKHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RD3G08CBKHRBTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V Surface Mount 2.5V @ 924µA 41 nC @ 10 V 40 V ±20V 2570 pF @ 20 V AEC-Q101 - TO-252 Automotive 96W (Tc) 175°C (TJ)
R6010YND3TL1

R6010YND3TL1

600V 10A TO-252, HIGH-SPEED SWIT

Rohm Semiconductor

2,500 -
R6010YND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V Surface Mount 6V @ 1.2mA 15 nC @ 10 V 600 V ±30V 600 pF @ 100 V - - TO-252 - 92W (Tc) 150°C (TJ)
RTF015N03TL

RTF015N03TL

MOSFET N-CH 30V 1.5A TUMT3

Rohm Semiconductor

6,701 -
RTF015N03TL

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 240mOhm @ 1.5A, 4.5V Surface Mount 1.5V @ 1mA 2.2 nC @ 4.5 V 30 V ±12V 80 pF @ 10 V - - TUMT3 - 320mW (Ta) 150°C (TJ)
R6010YNXC7G

R6010YNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

983 -
R6010YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V Through Hole 6V @ 1.2mA 15 nC @ 10 V 600 V ±30V 600 pF @ 100 V - - TO-220FM - 47W (Tc) 150°C (TJ)
R6027YNX3C16

R6027YNX3C16

NCH 600V 27A, TO-220AB, POWER MO

Rohm Semiconductor

980 -
R6027YNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V Through Hole 6V @ 2mA 40 nC @ 10 V 600 V ±30V 1670 pF @ 100 V - - TO-220AB - 245W (Tc) 150°C (TJ)
RT1E050RPTR

RT1E050RPTR

MOSFET P-CH 30V 5A 8TSST

Rohm Semiconductor

9,770 -
RT1E050RPTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 36mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 13 nC @ 5 V 30 V ±20V 1300 pF @ 10 V - - 8-TSST - 1.25W (Ta) 150°C (TJ)
RS1N110ATTB1

RS1N110ATTB1

PCH -80V -43A, HSOP8, POWER MOSF

Rohm Semiconductor

2,500 -
RS1N110ATTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11A (Ta), 43A (Tc) 6V, 10V 21mOhm @ 11A, 10V Surface Mount 4V @ 1mA 135 nC @ 10 V 80 V ±20V 5800 pF @ 40 V - - 8-HSOP - 3W (Ta), 40W (Tc) 150°C (TJ)
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