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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RF9G120BKFRATCRNCH 40V 12A, DFN2020Y7LSAA, POWE Rohm Semiconductor |
3,490 | - |
|
数据表 |
- | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 17.5mOhm @ 3A, 10V | Surface Mount | 2.5V @ 431µA | 8.5 nC @ 10 V | 40 V | ±20V | 470 pF @ 20 V | AEC-Q101 | - | DFN2020Y7LSAA | Automotive | 23W (Tc) | 150°C (TJ) |
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|
RQ3L120BJFRATCBPCH -60V -12A, HSMT8AG, POWER MO Rohm Semiconductor |
3,000 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 106mOhm @ 12A, 10V | Surface Mount | 2.5V @ 273µA | 15.7 nC @ 10 V | 60 V | +5V, -20V | 710 pF @ 30 V | AEC-Q101 | - | 8-HSMT (3.2x3) | Automotive | 40W (Tc) | 150°C (TJ) |
|
|
R6006KND4TL1600V 2.8A SOT-223-3, HIGH-SPEED Rohm Semiconductor |
3,981 | - |
|
数据表 |
- | TO-261-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | 10V | 870mOhm @ 2A, 10V | Surface Mount | 5.5V @ 1mA | 12 nC @ 10 V | 600 V | ±20V | 350 pF @ 25 V | - | - | SOT-223-3 | - | 12.3W (Tc) | 150°C (TJ) |
|
|
RQ3L120BKFRATCBNCH 60V 12A, HSMT8AG, POWER MOSF Rohm Semiconductor |
3,490 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 30mOhm @ 12A, 10V | Surface Mount | 2.5V @ 19µA | 7.3 nC @ 10 V | 60 V | ±20V | 440 pF @ 30 V | AEC-Q101 | - | 8-HSMT (3.2x3) | Automotive | 40W (Tc) | 150°C (TJ) |
|
|
R6502END3TL1650V 1.7A TO-252, LOW-NOISE POWE Rohm Semiconductor |
2,500 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 4Ohm @ 600mA, 10V | Surface Mount | 4V @ 40µA | 6.5 nC @ 10 V | 650 V | ±20V | 65 pF @ 25 V | - | - | TO-252 | - | 26W (Tc) | 150°C (TJ) |
|
|
RD3P01BATTL1PCH -100V -10A POWER MOSFET: RD3 Rohm Semiconductor |
2,414 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 6V, 10V | 240mOhm @ 5A, 10V | Surface Mount | 4V @ 1mA | 19.4 nC @ 10 V | 100 V | ±20V | 660 pF @ 50 V | - | - | TO-252 | - | 25W (Ta) | 150°C (TJ) |
|
|
R6004KNXC7G600V 4A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
952 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 980mOhm @ 1.5A, 10V | Through Hole | 5V @ 1mA | 10.2 nC @ 10 V | 600 V | ±20V | 280 pF @ 25 V | - | - | TO-220FM | - | 40W (Tc) | 150°C (TJ) |
|
RDN120N25MOSFET N-CH 250V 12A TO220FN Rohm Semiconductor |
8,595 | - |
|
数据表 |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 10V | 210mOhm @ 6A, 10V | Through Hole | 4V @ 1mA | 62 nC @ 10 V | 250 V | ±30V | 1224 pF @ 10 V | - | - | TO-220FN | - | 40W (Tc) | 150°C (TJ) |
|
RCJ100N25TLMOSFET N-CH 250V 10A LPT Rohm Semiconductor |
990 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 320mOhm @ 5A, 10V | Surface Mount | 5V @ 1mA | 26.5 nC @ 10 V | 250 V | ±30V | 1440 pF @ 25 V | - | - | LPTS | - | 1.56W (Ta), 85W (Tc) | 150°C (TJ) |
|
|
R6004RND3TL1600V 4A TO-252, PRESTOMOS WITH I Rohm Semiconductor |
2,700 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 15V | 1.73Ohm @ 2A, 15V | Surface Mount | 7V @ 450µA | 10.5 nC @ 15 V | 600 V | ±30V | 230 pF @ 100 V | - | - | TO-252 | - | 60W (Tc) | 150°C (TJ) |
