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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFIBE30GPBF

IRFIBE30GPBF

MOSFET N-CH 800V 2.1A TO220-3

Vishay Siliconix

1,824 -
IRFIBE30GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 78 nC @ 10 V 800 V ±20V 1300 pF @ 25 V - - TO-220-3 - 35W (Tc) -55°C ~ 150°C (TJ)
R8003KND3TL1

R8003KND3TL1

HIGH-SPEED SWITCHING NCH 800V 3A

Rohm Semiconductor

895 -
R8003KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V Surface Mount 4.5V @ 2mA 11.5 nC @ 10 V 800 V ±20V 300 pF @ 100 V - - TO-252 - 45W (Ta) 150°C (TJ)
FCP600N65S3R0

FCP600N65S3R0

MOSFET N-CH 650V 6A TO220-3

onsemi

785 -
FCP600N65S3R0

数据表

SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 3A, 10V Through Hole 4.5V @ 600µA 11 nC @ 10 V 650 V ±30V 465 pF @ 400 V - - TO-220-3 - 54W (Tc) -55°C ~ 150°C (TJ)
STB11N65M5

STB11N65M5

MOSFET N CH 650V 9A D2PAK

STMicroelectronics

2,839 -
STB11N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 480mOhm @ 4.5A, 10V Surface Mount 5V @ 250µA 17 nC @ 10 V 650 V ±25V 644 pF @ 100 V - - TO-263 (D2PAK) - 85W (Tc) 150°C (TJ)
STH170N8F7-2

STH170N8F7-2

MOSFET N-CH 80V 120A H2PAK-2

STMicroelectronics

1,254 -
STH170N8F7-2

数据表

STripFET™ F7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.7mOhm @ 60A, 10V Surface Mount 4.5V @ 250µA 120 nC @ 10 V 80 V ±20V 8710 pF @ 40 V - - H2PAK-2 - 250W (Tc) -55°C ~ 175°C (TJ)
NTMFS008N12MCT1G

NTMFS008N12MCT1G

SINGLE N-CHANNEL POWER MOSFET 12

onsemi

696 -
NTMFS008N12MCT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 79A (Tc) 6V, 10V 8mOhm @ 36A, 10V Surface Mount 4V @ 200µA 33 nC @ 10 V 120 V ±20V 2705 pF @ 60 V - - 5-DFN (5x6) (8-SOFL) - 2.7W (Ta), 102W (Tc) -55°C ~ 150°C (TJ)
IPB049N08N5ATMA1

IPB049N08N5ATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies

1,834 -
IPB049N08N5ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 4.9mOhm @ 80A, 10V Surface Mount 3.8V @ 66µA 53 nC @ 10 V 80 V ±20V 3770 pF @ 40 V - - PG-TO263-3 - 125W (Tc) -55°C ~ 175°C (TJ)
RJK6006DPP-A0#T2

RJK6006DPP-A0#T2

MOSFET N-CH 600V 10A TO220FP

Renesas Electronics Corporation

1,711 -
RJK6006DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Through Hole - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - TO-220FP - 30W (Ta) 150°C
AUIRF7737L2TR

AUIRF7737L2TR

MOSFET N-CH 40V 31A/156A DIRECT

International Rectifier

3,113 -
AUIRF7737L2TR

数据表

HEXFET® DirectFET™ Isometric L6 Bulk Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 156A (Tc) 10V 1.9mOhm @ 94A, 10V Surface Mount 4V @ 150µA 134 nC @ 10 V 40 V ±20V 5469 pF @ 25 V - - DIRECTFET L6 - 3.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
FDD6530A

FDD6530A

MOSFET N-CH 20V 21A TO252

Fairchild Semiconductor

3,876 -
FDD6530A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 2.5V, 4.5V 32mOhm @ 8A, 4.5V Surface Mount 1.2V @ 250µA 9 nC @ 4.5 V 20 V ±8V 710 pF @ 10 V - - TO-252 (DPAK) - 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ)
DMTH10H009SPSQ-13

DMTH10H009SPSQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

7,599 -
DMTH10H009SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 86A (Tc) 10V 8.9mOhm @ 20A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 100 V ±20V 2085 pF @ 50 V AEC-Q101 - PowerDI5060-8 Automotive 1.6W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
FDS86540

FDS86540

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

8,040 -
FDS86540

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Ta) 8V, 10V 4.5mOhm @ 18A, 10V Surface Mount 4V @ 250µA 90 nC @ 10 V 60 V ±20V 6410 pF @ 30 V - - 8-SOIC - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ)
FDMC5614P-B8

FDMC5614P-B8

FET -60V 100.0 MOHM MLP33

onsemi

8,779 -
FDMC5614P-B8

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.7A (Ta), 13.5A (Tc) 4.5V, 10V 100mOhm @ 5.7A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 60 V ±20V 1055 pF @ 30 V - - 8-WDFN (3.3x3.3) - 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IRF3709PBF

IRF3709PBF

IRF3709 - 12V-300V N-CHANNEL POW

International Rectifier

2,576 -
IRF3709PBF

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V Through Hole 3V @ 250µA 41 nC @ 5 V 30 V ±20V 2672 pF @ 16 V - - TO-220AB - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ)
IRFH7440TRPBF

IRFH7440TRPBF

IRFH7440 - 12V-300V N-CHANNEL PO

International Rectifier

2,758 -
IRFH7440TRPBF

数据表

HEXFET®, StrongIRFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 6V, 10V 2.4mOhm @ 50A, 10V Surface Mount 3.9V @ 100µA 138 nC @ 10 V 40 V ±20V 4574 pF @ 25 V - - 8-PQFN (5x6) - 104W (Tc) -55°C ~ 150°C (TJ)
BSS84TA

BSS84TA

MOSFET P-CH 50V 130MA SOT23-3

Diodes Incorporated

3,098 -
BSS84TA

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 130mA (Ta) 5V 10Ohm @ 100mA, 5V Surface Mount 2V @ 1mA - 50 V ±20V 40 pF @ 25 V - - SOT-23-3 - 360mW (Ta) -55°C ~ 150°C (TJ)
DMN5L06-7

DMN5L06-7

MOSFET N-CH 50V 280MA SOT23-3

Diodes Incorporated

3,155 -
DMN5L06-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 280mA (Ta) 1.8V, 2.7V 3Ohm @ 200mA, 2.7V Surface Mount 1.2V @ 250µA - 50 V ±20V 50 pF @ 25 V - - SOT-23-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
FCPF36N60NT

FCPF36N60NT

MOSFET N-CH 600V 36A TO220F

Fairchild Semiconductor

4,064 -
FCPF36N60NT

数据表

SupreMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 90mOhm @ 18A, 10V Through Hole 4V @ 250µA 112 nC @ 10 V 600 V ±30V 4785 pF @ 100 V - - TO-220F-3 - - -55°C ~ 150°C (TJ)
SI1400DL-T1-E3

SI1400DL-T1-E3

MOSFET N-CH 20V 1.6A SC70-6

Vishay Siliconix

4,482 -
SI1400DL-T1-E3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 2.5V, 4.5V 150mOhm @ 1.7A, 4.5V Surface Mount 600mV @ 250µA (Min) 4 nC @ 4.5 V 20 V ±12V - - - SC-70-6 - 568mW (Ta) -55°C ~ 150°C (TJ)
FDD3706

FDD3706

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2,045 -
FDD3706

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 14.7A (Ta), 50A (Tc) 2.5V, 10V 9mOhm @ 16.2A, 10V Surface Mount 1.5V @ 250µA 23 nC @ 4.5 V 20 V ±12V 1882 pF @ 10 V - - TO-252 (DPAK) - 3.8W (Ta), 44W (Tc) -55°C ~ 175°C (TJ)
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