富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI3457BDV-T1-E3

SI3457BDV-T1-E3

MOSFET P-CH 30V 3.7A 6TSOP

Vishay Siliconix

2,944 -
SI3457BDV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.7A (Ta) 4.5V, 10V 54mOhm @ 5A, 10V Surface Mount 3V @ 250µA 19 nC @ 10 V 30 V ±20V - - - 6-TSOP - 1.14W (Ta) -55°C ~ 150°C (TJ)
FDD8874

FDD8874

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

4,034 -
FDD8874

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 2990 pF @ 15 V - - TO-252 (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
NX3008NBKMB315

NX3008NBKMB315

NOW NEXPERIA NX3008NBKMB SMALL S

NXP USA Inc.

4,035 -
NX3008NBKMB315

数据表

- SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 530mA (Ta) 1.8V, 4.5V 1.4Ohm @ 350mA, 4.5V Surface Mount 1.1V @ 250µA 0.68 nC @ 4.5 V 30 V ±8V 50 pF @ 15 V - - DFN1006B-3 - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ)
SIA418DJ-T1-GE3

SIA418DJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix

7,274 -
SIA418DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 18mOhm @ 9A, 10V Surface Mount 2.4V @ 250µA 17 nC @ 10 V 30 V ±20V 570 pF @ 15 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
FQP3P20

FQP3P20

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

6,074 -
FQP3P20

数据表

QFET® TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 8 nC @ 10 V 200 V ±30V 250 pF @ 25 V - - TO-220-3 - 52W (Tc) -55°C ~ 150°C (TJ)
SI3442CDV-T1-GE3

SI3442CDV-T1-GE3

MOSFET N-CH 20V 8A 6TSOP

Vishay Siliconix

9,541 -
SI3442CDV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 2.5V, 10V 27mOhm @ 6.5A, 10V Surface Mount 1.5V @ 250µA 14 nC @ 10 V 20 V ±12V 335 pF @ 10 V - - 6-TSOP - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ)
IRF6722MTRPBF

IRF6722MTRPBF

MOSFET N-CH 30V 13A/56A DIRECTFT

International Rectifier

8,265 -
IRF6722MTRPBF

数据表

HEXFET® DirectFET™ Isometric MP Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 56A (Tc) 4.5V, 10V 7.7mOhm @ 13A, 10V Surface Mount 2.4V @ 50µA 17 nC @ 4.5 V 30 V ±20V 1300 pF @ 15 V - - DIRECTFET™ MP - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
AON1634

AON1634

MOSFET N-CH 30V 4A 6DFN

Alpha & Omega Semiconductor Inc.

7,882 -
AON1634

数据表

- 6-PowerUFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 10V 54mOhm @ 4A, 10V Surface Mount 1.5V @ 250µA 10 nC @ 10 V 30 V ±12V 245 pF @ 15 V - - 6-DFN (1.6x1.6) - 1.8W (Ta) -55°C ~ 150°C (TJ)
SSM3J14TTE85LF

SSM3J14TTE85LF

MOSFET P-CH 30V 2.7A TSM

Toshiba Semiconductor and Storage

8,786 -
SSM3J14TTE85LF

数据表

U-MOSII TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Ta) 4V, 10V 85mOhm @ 1.35A, 10V Surface Mount - - 30 V ±20V 413 pF @ 15 V - - TSM - 700mW (Ta) 150°C (TJ)
FDMC8327L

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

5,102 -
FDMC8327L

数据表

PowerTrench® 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 40 V ±20V 1850 pF @ 20 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
PMPB13XNE,115

PMPB13XNE,115

MOSFET N-CH 30V 8A DFN2020MD-6

NXP USA Inc.

6,716 -
PMPB13XNE,115

数据表

- 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 1.8V, 4.5V 16mOhm @ 8A, 4.5V Surface Mount 900mV @ 250µA 36 nC @ 4.5 V 30 V ±12V 2195 pF @ 15 V - - DFN1010B-6 - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
DMP3065LVT-7

DMP3065LVT-7

MOSFET P-CH 30V 4.9A TSOT-26

Diodes Incorporated

2,288 -
DMP3065LVT-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.9A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V Surface Mount 2.1V @ 250µA 12.3 nC @ 10 V 30 V ±20V 587 pF @ 15 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
PMN120ENEX

PMN120ENEX

MOSFET N-CH 60V 3.1A 6TSOP

Nexperia USA Inc.

7,079 -
PMN120ENEX

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Ta) 4.5V, 10V 123mOhm @ 2.4A, 10V Surface Mount 2.7V @ 250µA 7.4 nC @ 10 V 60 V ±20V 275 pF @ 30 V - - 6-TSOP - 1.4W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
PJE8400_R1_00001

PJE8400_R1_00001

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,534 -
PJE8400_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.1A (Ta) 1.8V, 4.5V 88mOhm @ 1.1A, 4.5V Surface Mount 1.2V @ 250µA 4.6 nC @ 4.5 V 20 V ±12V 350 pF @ 10 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJE8472B_R1_00001

PJE8472B_R1_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,431 -
PJE8472B_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 3Ohm @ 600mA, 10V Surface Mount 2.5V @ 250µA 0.82 nC @ 4.5 V 60 V ±30V 34 pF @ 25 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJC7472B_R1_00001

PJC7472B_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,553 -
PJC7472B_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250mA (Ta) 4.5V, 10V 3Ohm @ 600mA, 10V Surface Mount 2.5V @ 250µA 0.82 nC @ 4.5 V 60 V ±30V 34 pF @ 25 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
NVTFS002N04CLTAG

NVTFS002N04CLTAG

MOSFET N-CH 40V 28A/142A 8WDFN

onsemi

280 -
NVTFS002N04CLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 142A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V Surface Mount 2V @ 90µA 49 nC @ 10 V 40 V ±20V 2940 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ)
PSMN9R5-100BS,118

PSMN9R5-100BS,118

MOSFET N-CH 100V 89A D2PAK

Nexperia USA Inc.

5,456 -
PSMN9R5-100BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 89A (Tc) 10V 9.6mOhm @ 15A, 10V Surface Mount 4V @ 1mA 82 nC @ 10 V 100 V ±20V 4454 pF @ 50 V - - D2PAK - 211W (Tc) -55°C ~ 175°C (TJ)
R6007END3TL1

R6007END3TL1

MOSFET N-CH 600V 7A TO252

Rohm Semiconductor

2,476 -
R6007END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 4V @ 1mA 20 nC @ 10 V 600 V ±20V 390 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
R6507KNXC7G

R6507KNXC7G

650V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

979 -
R6507KNXC7G

数据表

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 665mOhm @ 2.4A, 10V Through Hole 5V @ 200µA 14.5 nC @ 10 V 650 V ±20V 470 pF @ 25 V - - TO-220FM - 46W (Tc) 150°C (TJ)
共 36322 条记录«上一页1... 1819202122232425...1817下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户