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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP030N06B-F102

FDP030N06B-F102

MOSFET N-CH 60V 120A TO220-3

onsemi

679 -
FDP030N06B-F102

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.1mOhm @ 100A, 10V Through Hole 4V @ 250µA 99 nC @ 10 V 60 V ±20V 8030 pF @ 30 V - - TO-220-3 - 205W (Tc) -55°C ~ 175°C (TJ)
IXFP7N100P

IXFP7N100P

MOSFET N-CH 1000V 7A TO220AB

IXYS

300 -
IXFP7N100P

数据表

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V Through Hole 6V @ 1mA 47 nC @ 10 V 1000 V ±30V 2590 pF @ 25 V - - TO-220-3 - 300W (Tc) -55°C ~ 150°C (TJ)
RS1E321GNTB1

RS1E321GNTB1

MOSFET N-CH 30V 32A/80A 8HSOP

Rohm Semiconductor

4,800 -
RS1E321GNTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 80A (Tc) 4.5V, 10V 2.1mOhm @ 32A, 10V Surface Mount 2.5V @ 1mA 42.8 nC @ 10 V 30 V ±20V 2850 pF @ 15 V - - 8-HSOP - 3W (Ta) 150°C (TJ)
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

1,600 -
NP89N06PDK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V Surface Mount 2.5V @ 250µA 95 nC @ 10 V 60 V ±20V 6000 pF @ 25 V AEC-Q101 - TO-263-3 Automotive 1.8W (Ta), 147W (Tc) 175°C
IPI90N04S402AKSA1

IPI90N04S402AKSA1

MOSFET N-CH 40V 90A TO262-3

Infineon Technologies

439 -
IPI90N04S402AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 2.5mOhm @ 90A, 10V Through Hole 4V @ 95µA 118 nC @ 10 V 40 V ±20V 9430 pF @ 25 V - - PG-TO262-3 - 150W (Tc) -55°C ~ 175°C (TJ)
R6515KNZC17

R6515KNZC17

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor

299 -
R6515KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Through Hole 5V @ 430µA 27.5 nC @ 10 V 650 V ±20V 1050 pF @ 25 V - - TO-3PF - 60W (Tc) 150°C (TJ)
R6015KNZC17

R6015KNZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

289 -
R6015KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 5V @ 1mA 27.5 nC @ 10 V 600 V ±20V 1050 pF @ 25 V - - TO-3PF - 60W (Tc) 150°C (TJ)
RS6P060BHTB1

RS6P060BHTB1

NCH 100V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,220 -
RS6P060BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 6V, 10V 10.6mOhm @ 60A, 10V Surface Mount 4V @ 1mA 25 nC @ 10 V 100 V ±20V 1560 pF @ 50 V - - 8-HSOP - 3W (Ta), 73W (Tc) 150°C (TJ)
PSMN1R1-30YLEX

PSMN1R1-30YLEX

PSMN1R1-30YLE/SOT669/LFPAK

Nexperia USA Inc.

1,479 -
PSMN1R1-30YLEX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 265A (Tc) 7V, 10V 1.26mOhm @ 25A, 10V Surface Mount 2.2V @ 2mA 102 nC @ 10 V 30 V ±20V 6317 pF @ 15 V - - LFPAK56, Power-SO8 - 192W (Tc) -55°C ~ 175°C (TJ)
PJC7406_R1_00001

PJC7406_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,476 -
PJC7406_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 1.8V, 4.5V 77mOhm @ 1.3A, 4.5V Surface Mount 1.2V @ 250µA 4.6 nC @ 4.5 V 20 V ±12V 350 pF @ 10 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
STP15N65M5

STP15N65M5

MOSFET N CH 650V 11A TO220

STMicroelectronics

980 -
STP15N65M5

数据表

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 340mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 650 V ±25V 810 pF @ 100 V - - TO-220 - 125W (Tc) 150°C (TJ)
FDS8884

FDS8884

MOSFET N-CH 30V 8.5A 8SOIC

UMW

4,719 -
FDS8884

数据表

* - Active - - - - - - - - - - - - - - - - -
PSMNR98-25YLEX

PSMNR98-25YLEX

PSMNR98-25YLE/SOT669/LFPAK

Nexperia USA Inc.

860 -
PSMNR98-25YLEX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 255A (Tc) 7V, 10V 1.11mOhm @ 25A, 10V Surface Mount 2.2V @ 2mA 98 nC @ 10 V 25 V ±20V 6249 pF @ 12 V - - LFPAK56, Power-SO8 - 192W (Tc) -55°C ~ 175°C (TJ)
FDS6612A

FDS6612A

MOSFET N-CH 30V 8.4A 8SOIC

UMW

5,168 -
FDS6612A

数据表

* - Active - - - - - - - - - - - - - - - - -
STU75N3LLH6

STU75N3LLH6

MOSFET N-CH 30V 75A IPAK

STMicroelectronics

9,682 -
STU75N3LLH6

数据表

DeepGATE™, STripFET™ VI TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 5.9mOhm @ 37.5A, 10V Through Hole 2.5V @ 250µA 23.8 nC @ 4.5 V 30 V ±20V 2030 pF @ 10 V - - TO-251 (IPAK) - 60W (Tc) -55°C ~ 175°C (TJ)
SPI10N10

SPI10N10

MOSFET N-CH 100V 10.3A TO262-3

Infineon Technologies

6,908 -
SPI10N10

数据表

SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 10.3A (Tc) 10V 170mOhm @ 7.8A, 10V Through Hole 4V @ 21µA 19.4 nC @ 10 V 100 V ±20V 426 pF @ 25 V - - PG-TO262-3-1 - 50W (Tc) -55°C ~ 175°C (TJ)
TSM3481CX6

TSM3481CX6

-30V, -5.7A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

3,492 -
TSM3481CX6

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.7A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V Surface Mount 3V @ 250µA 18.09 nC @ 10 V 30 V ±20V 1047.98 pF @ 15 V - - SOT-26 - 1.6W (Ta) -55°C ~ 150°C (TJ)
IPS80R1K4P7AKMA1

IPS80R1K4P7AKMA1

MOSFET N-CH 800V 4A TO251-3

Infineon Technologies

2,739 -
IPS80R1K4P7AKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V Through Hole 3.5V @ 700µA 10 nC @ 10 V 800 V ±20V - - - PG-TO251-3-11 - 32W (Tc) -55°C ~ 150°C (TJ)
IPA60R1K5CEXKSA1

IPA60R1K5CEXKSA1

MOSFET N-CH 600V 5A TO220

Infineon Technologies

9,220 -
IPA60R1K5CEXKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V Through Hole 3.5V @ 90µA 9.4 nC @ 10 V 600 V ±20V 200 pF @ 100 V - - PG-TO220-FP - 20W (Tc) -40°C ~ 150°C (TJ)
MCAC55P03-TP

MCAC55P03-TP

MOSFET P-CH 30 55A DFN5060

Micro Commercial Co

3,885 -
MCAC55P03-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 2V @ 250µA 67 nC @ 10 V 30 V ±20V 3399 pF @ 25 V - - DFN5060 - 104W (Tj) -55°C ~ 150°C (TJ)
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