富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPF042N10NF2SATMA1

IPF042N10NF2SATMA1

MOSFET

Infineon Technologies

281 -
IPF042N10NF2SATMA1

数据表

StrongIRFET™ 2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 139A (Tc) 6V, 10V 4.25mOhm @ 80A, 10V Surface Mount 3.8V @ 93µA 85 nC @ 10 V 100 V ±20V 4000 pF @ 50 V - - PG-TO263-7 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
FQP9N90C

FQP9N90C

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

8,277 -
FQP9N90C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.4Ohm @ 4A, 10V Through Hole 5V @ 250µA 58 nC @ 10 V 900 V ±30V 2730 pF @ 25 V - - TO-220-3 - 205W (Tc) -55°C ~ 150°C (TJ)
IPB026N06NATMA1

IPB026N06NATMA1

MOSFET N-CH 60V 25A/100A D2PAK

Infineon Technologies

2,911 -
IPB026N06NATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 100A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V Surface Mount 2.8V @ 75µA 56 nC @ 10 V 60 V ±20V 4100 pF @ 30 V - - PG-TO263-3 - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
PMPB33XN,115

PMPB33XN,115

MOSFET N-CH 30V 4.3A DFN2020MD-6

NXP USA Inc.

3,235 -
PMPB33XN,115

数据表

- 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 4.3A (Ta) 2.5V, 4.5V 47mOhm @ 4.3A, 4.5V Surface Mount 1.2V @ 250µA 7.6 nC @ 4.5 V 30 V ±12V 505 pF @ 15 V - - DFN1010B-6 - 1.5W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ)
STL190N4F7AG

STL190N4F7AG

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

807 -
STL190N4F7AG

数据表

STripFET™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2mOhm @ 17.5A, 10V Surface Mount, Wettable Flank 4V @ 250µA 41 nC @ 10 V 40 V ±20V 3000 pF @ 25 V AEC-Q101 - PowerFlat™ (5x6) Automotive 127W (Tc) -55°C ~ 175°C (TJ)
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Fairchild Semiconductor

5,347 -
SI3443DV

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V Surface Mount 1.5V @ 250µA 15 nC @ 4.5 V 20 V ±12V 1079 pF @ 10 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
NVMFS5C404NWFT1G-K

NVMFS5C404NWFT1G-K

MOSFET N-CH 40V 53A/378A 5DFN

onsemi

7,029 -
NVMFS5C404NWFT1G-K

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V Surface Mount 4V @ 250µA 128 nC @ 10 V 40 V ±20V 8400 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
CP775-CWDM3011P-CM

CP775-CWDM3011P-CM

MOSFET P-CH 30V 11A DIE

Central Semiconductor Corp

9,103 -
CP775-CWDM3011P-CM

数据表

- Die Tray Obsolete P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 20mOhm @ 11A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 3100 pF @ 8 V - - Die - 2.5W (Ta) -55°C ~ 150°C (TJ)
CP775-CWDM3011P-WN

CP775-CWDM3011P-WN

MOSFET P-CH 30V 11A DIE

Central Semiconductor Corp

6,431 -
CP775-CWDM3011P-WN

数据表

- Die Bulk Obsolete P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 20mOhm @ 11A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 3100 pF @ 8 V - - Die - - -55°C ~ 150°C (TJ)
NP75N055YUK-E1-AY

NP75N055YUK-E1-AY

POWER TRS2

Renesas Electronics Corporation

5,000 -
NP75N055YUK-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.5mOhm @ 38A, 10V Surface Mount 4V @ 250µA 83 nC @ 10 V 55 V ±20V 5300 pF @ 25 V AEC-Q101 - 8-HSON (5x5.4) Automotive 1W (Ta), 138W (Tc) 175°C
CP802-CWDM3011P-CT

CP802-CWDM3011P-CT

MOSFET P-CH 30V 11A DIE

Central Semiconductor Corp

2,845 -
CP802-CWDM3011P-CT

数据表

- Die Tray Active P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 13mOhm @ 1A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 3100 pF @ 8 V - - Die - - -55°C ~ 150°C (TJ)
CP775-CWDM3011P-CT

CP775-CWDM3011P-CT

MOSFET P-CH 30V 11A DIE

Central Semiconductor Corp

8,935 -
CP775-CWDM3011P-CT

数据表

- Die Tray Obsolete P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 20mOhm @ 11A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 3100 pF @ 8 V - - Die - - -55°C ~ 150°C (TJ)
R6520KNXC7G

R6520KNXC7G

650V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

998 -
R6520KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - TO-220FM - 68W (Tc) 150°C (TJ)
CP802-CWDM3011P-CM

CP802-CWDM3011P-CM

MOSFET P-CH 30V 11A DIE

Central Semiconductor Corp

2,139 -
CP802-CWDM3011P-CM

数据表

- Die Tray Active P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 13mOhm @ 1A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 3100 pF @ 8 V - - Die - - -55°C ~ 150°C (TJ)
IXTP110N055T2

IXTP110N055T2

MOSFET N-CH 55V 110A TO220AB

Littelfuse Inc.

300 -
IXTP110N055T2

数据表

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 6.6mOhm @ 25A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 55 V ±20V 3060 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
CP771-CXDM4060P-WN

CP771-CXDM4060P-WN

MOSFET P-CH 40V 6A DIE

Central Semiconductor Corp

5,891 -
CP771-CXDM4060P-WN

数据表

- Die Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) - 65mOhm @ 6A, 10V Surface Mount 3V @ 250µA 6.5 nC @ 4.5 V 40 V ±25V 750 pF @ 25 V - - Die - - -55°C ~ 150°C (TJ)
CP771-CXDM4060P-CT

CP771-CXDM4060P-CT

MOSFET P-CH 40V 6A DIE

Central Semiconductor Corp

5,038 -
CP771-CXDM4060P-CT

数据表

- Die Tray Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) - 65mOhm @ 6A, 10V Surface Mount 3V @ 250µA 6.5 nC @ 4.5 V 40 V ±25V 750 pF @ 25 V - - Die - - -55°C ~ 150°C (TJ)
IRF830STRLPBF

IRF830STRLPBF

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix

650 -
IRF830STRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 500 V ±20V 610 pF @ 25 V - - TO-263 (D2PAK) - 74W (Tc) -55°C ~ 150°C (TJ)
SIRA90ADP-T1-GE3

SIRA90ADP-T1-GE3

MOSFET N-CH 30V 71A/334A PPAK

Vishay Siliconix

5,519 -
SIRA90ADP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Cut Tape (CT) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 71A (Ta), 334A (Tc) - 0.78mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 195 nC @ 10 V 30 V +20V, -16V 9120 pF @ 15 V - - PowerPAK® SO-8 - 6.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
STF7N90K5

STF7N90K5

MOSFET N-CH 900V 7A TO220FP

STMicroelectronics

930 -
STF7N90K5

数据表

MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V - Through Hole 5V @ 100µA - 900 V ±30V - - - TO-220FP - 25W -55°C ~ 150°C (TJ)
共 36322 条记录«上一页1... 1920212223242526...1817下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户