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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRF3710ZSTRR

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

International Rectifier

5,896 -
AUIRF3710ZSTRR

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 59A (Tc) - 18mOhm @ 35A, 10V Surface Mount 4V @ 250µA 120 nC @ 10 V 100 V - 2900 pF @ 25 V - - PG-TO263-3 - - -
TSM5NC50CF C0G

TSM5NC50CF C0G

MOSFET N-CH 500V 5A ITO220S

Taiwan Semiconductor Corporation

7,802 -
TSM5NC50CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 1.7A, 10V Through Hole 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - ITO-220S - 40W (Tc) -55°C ~ 150°C (TJ)
IRFL1006TR

IRFL1006TR

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies

3,732 -
IRFL1006TR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V Surface Mount 4V @ 250µA 8 nC @ 10 V 60 V ±20V 160 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
MTD20P03HDLT4

MTD20P03HDLT4

MOSFET P-CH 30V 19A DPAK

onsemi

9,253 -
MTD20P03HDLT4

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 19A (Tc) 5V 99mOhm @ 9.5A, 5V Surface Mount 2V @ 250µA 22.4 nC @ 5 V 30 V ±15V 1064 pF @ 25 V - - DPAK - 75W (Tc) -55°C ~ 150°C (TJ)
NTD20N06T4

NTD20N06T4

MOSFET N-CH 60V 20A DPAK

onsemi

9,072 -
NTD20N06T4

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 46mOhm @ 10A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 60 V ±20V 1015 pF @ 25 V - - DPAK - 1.88W (Ta), 60W (Tj) -55°C ~ 175°C (TJ)
SIDR638DP-T1-RE3

SIDR638DP-T1-RE3

N-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix

12,000 -
SIDR638DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 204 nC @ 10 V 40 V +20V, -16V 10500 pF @ 20 V - - PowerPAK® SO-8DC - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
PJMF210N65EC_T0_00601

PJMF210N65EC_T0_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.

1,978 -
PJMF210N65EC_T0_00601

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 210mOhm @ 9.5A, 10V Through Hole 4V @ 250µA 34 nC @ 10 V 650 V ±30V 1412 pF @ 400 V - - ITO-220AB-F - 32W (Tc) -55°C ~ 150°C (TJ)
STF6N80K5

STF6N80K5

MOSFET N-CH 800V 4.5A TO220FP

STMicroelectronics

996 -
STF6N80K5

数据表

SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V Through Hole 5V @ 100µA 13 nC @ 10 V 800 V 30V 270 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
AUIRFR3806TRL

AUIRFR3806TRL

MOSFET N-CH 60V 43A DPAK

Infineon Technologies

6,519 -
AUIRFR3806TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 15.8mOhm @ 25A, 10V Surface Mount 4V @ 50µA 30 nC @ 10 V 60 V ±20V 1150 pF @ 50 V - - TO-252AA (DPAK) - 71W (Tc) -55°C ~ 175°C (TJ)
R5205PND3FRATL

R5205PND3FRATL

525V 5A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2,277 -
R5205PND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V Surface Mount 4.5V @ 1mA 10.8 nC @ 10 V 525 V ±30V 320 pF @ 25 V - - TO-252 - 65W (Tc) 150°C (TJ)
NTMYS2D4N04CTWG

NTMYS2D4N04CTWG

MOSFET N-CH 40V 30A/138A 4LFPAK

onsemi

2,850 -
NTMYS2D4N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 138A (Tc) 10V 2.3mOhm @ 50A, 10V Surface Mount 3.5V @ 90µA 32 nC @ 10 V 40 V ±20V 2100 pF @ 25 V - - LFPAK4 (5x6) - 3.9W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
IRFR9220TRLPBF

IRFR9220TRLPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix

2,455 -
IRFR9220TRLPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 200 V ±20V 340 pF @ 25 V - - DPAK - 42W (Tc) -55°C ~ 150°C (TJ)
R6511KND3TL1

R6511KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 1

Rohm Semiconductor

2,315 -
R6511KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 5V @ 320µA 22 nC @ 10 V 650 V ±20V 760 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
BUK764R0-40E,118

BUK764R0-40E,118

MOSFET N-CH 40V 75A D2PAK

Nexperia USA Inc.

2,075 -
BUK764R0-40E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4mOhm @ 25A, 10V Surface Mount 4V @ 1mA 54 nC @ 10 V 40 V ±20V 4405 pF @ 25 V AEC-Q101 - D2PAK Automotive 182W (Tc) -55°C ~ 175°C (TJ)
STL16N65M2

STL16N65M2

MOSFET N-CH 650V 7.5A POWERFLAT

STMicroelectronics

2,515 -
STL16N65M2

数据表

MDmesh™ M2 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 395mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 19.5 nC @ 10 V 650 V ±25V 718 pF @ 100 V - - PowerFlat™ (5x6) HV - 56W (Tc) -55°C ~ 150°C (TJ)
DMTH6004SCTB-13

DMTH6004SCTB-13

MOSFET N-CH 60V 100A TO263AB

Diodes Incorporated

780 -
DMTH6004SCTB-13

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.4mOhm @ 100A, 10V Surface Mount 4V @ 250µA 95.4 nC @ 10 V 60 V ±20V 4556 pF @ 30 V AEC-Q101 - TO-263 Automotive 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
RJK1001DPP-A0#T2

RJK1001DPP-A0#T2

MOSFET N-CH 100V 80A TO220FPA

Renesas Electronics Corporation

6,988 -
RJK1001DPP-A0#T2

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 5.5mOhm @ 40A, 10V Through Hole 4V @ 1mA 147 nC @ 10 V 100 V ±20V 10000 pF @ 10 V - - TO-220ABA - 30W (Ta) 150°C
R6006PND3FRATL

R6006PND3FRATL

600V 6A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2,435 -
R6006PND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.2Ohm @ 3A, 10V Surface Mount 4.5V @ 1mA 15 nC @ 10 V 600 V ±30V 460 pF @ 25 V - - TO-252 - 87W (Tc) 150°C (TJ)
NP179N055TUK-E1-AY

NP179N055TUK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

1,600 -
NP179N055TUK-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tray Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.75mOhm @ 90A, 10V Surface Mount 4V @ 250µA 240 nC @ 10 V 55 V ±20V 13950 pF @ 25 V AEC-Q101 - TO-263-7 Automotive 1.8W (Ta), 288W (Tc) 175°C
AUIRFR8403TRL

AUIRFR8403TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies

2,457 -
AUIRFR8403TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.1mOhm @ 76A, 10V Surface Mount 3.9V @ 100µA 99 nC @ 10 V 40 V ±20V 3171 pF @ 25 V - - TO-252AA (DPAK) - 99W (Tc) -55°C ~ 175°C (TJ)
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