订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DMPH4016SSS-13 MOSFET BVDSS: 31V~40V SO-8 T&R 2 Diodes Incorporated	7,620	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	11mOhm @ 9.8A, 10V	Surface Mount	2.5V @ 250µA	112 nC @ 10 V	40 V	±20V	5697 pF @ 20 V	-	-	8-SO	-	1.9W	-55°C ~ 175°C (TJ)
DMP4016SSS-13 MOSFET BVDSS: 31V~40V SO-8 T&R 2 Diodes Incorporated	2,501	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10.8A (Ta)	4.5V, 10V	11mOhm @ 9.8A, 10V	Surface Mount	2.5V @ 250µA	112 nC @ 10 V	40 V	±20V	5697 pF @ 20 V	-	-	8-SO	-	1.6W	-55°C ~ 150°C (TJ)
DMPH4009SSS-13 MOSFET BVDSS: 31V~40V SO-8 T&R 2 Diodes Incorporated	3,646	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	11mOhm @ 9.8A, 10V	Surface Mount	2.5V @ 250µA	112 nC @ 10 V	40 V	±20V	5697 pF @ 20 V	-	-	8-SO	-	1.8W	-55°C ~ 175°C (TJ)
DMP4009SSS-13 MOSFET BVDSS: 31V~40V SO-8 T&R 2 Diodes Incorporated	8,730	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	11mOhm @ 9.8A, 10V	Surface Mount	2.5V @ 250µA	112 nC @ 10 V	40 V	±20V	5697 pF @ 20 V	-	-	8-SO	-	1.5W	-55°C ~ 150°C (TJ)
SI7464DP-T1-GE3 MOSFET N-CH 200V 1.8A PPAK SO-8 Vishay Siliconix	1,930	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.8A (Ta)	6V, 10V	240mOhm @ 2.8A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	200 V	±20V	-	-	-	PowerPAK® SO-8	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
PSMN1R9-40YSDX MOSFET N-CH 40V 200A LFPAK56 Nexperia USA Inc.	932	-	询价单	数据表	TrenchMOS™	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200A (Tc)	10V	1.9mOhm @ 25A, 10V	Surface Mount	3.6V @ 1mA	80 nC @ 10 V	40 V	±20V	6198 pF @ 20 V	-	Schottky Diode (Body)	LFPAK56, Power-SO8	-	194W (Tc)	-55°C ~ 175°C (TJ)
IPAN60R210PFD7SXKSA1 MOSFET N-CH 650V 16A TO220 Infineon Technologies	781	-	询价单	数据表	CoolMOS™PFD7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	210mOhm @ 4.9A, 10V	Through Hole	4.5V @ 240µA	23 nC @ 10 V	650 V	±20V	1015 pF @ 400 V	-	-	PG-TO220-FP	-	25W (Tc)	-40°C ~ 150°C (TJ)
R6035VNXC7G 600V 17A TO-220FM, PRESTOMOS WIT Rohm Semiconductor	746	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V, 15V	114mOhm @ 8A, 15V	Through Hole	6.5V @ 1.1mA	50 nC @ 10 V	600 V	±30V	2400 pF @ 100 V	-	-	TO-220FM	-	81W (Tc)	150°C (TJ)
PMF400UN,115 MOSFET N-CH 30V 830MA SOT323-3 NXP USA Inc.	6,710	-	询价单	数据表	TrenchMOS™	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	830mA (Ta)	1.8V, 4.5V	480mOhm @ 200mA, 4.5V	Surface Mount	1V @ 250µA	0.89 nC @ 4.5 V	30 V	±8V	43 pF @ 25 V	-	-	SC-70	-	560mW (Tc)	-55°C ~ 150°C (TJ)
IPD90N06S4L03ATMA2 MOSFET N-CH 60V 90A TO252-31 Infineon Technologies	7,406	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.5mOhm @ 90A, 10V	Surface Mount	2.2V @ 90µA	170 nC @ 10 V	60 V	±16V	13000 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	150W (Tc)	-55°C ~ 175°C (TJ)
STF15N60M2-EP MOSFET N-CH 600V 11A TO220FP STMicroelectronics	1,550	-	询价单	数据表	MDmesh™ M2-EP	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	378mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	600 V	±25V	590 pF @ 100 V	-	-	TO-220FP	-	25W (Tc)	-55°C ~ 150°C (TJ)
BSH114,215 MOSFET N-CH 100V 500MA TO236AB Nexperia USA Inc.	5,360	-	询价单	数据表	TrenchMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	10V	500mOhm @ 500mA, 10V	Surface Mount	4V @ 1mA	4.6 nC @ 10 V	100 V	±20V	138 pF @ 25 V	-	-	TO-236AB	-	360mW (Ta), 830mW (Tc)	-55°C ~ 150°C (TJ)
R6020YNXC7G 600V 12A TO-220FM, FAST SWITCHIN Rohm Semiconductor	1,100	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V, 12V	200mOhm @ 6A, 10V	Through Hole	6V @ 1.65mA	28 nC @ 10 V	600 V	±30V	1200 pF @ 100 V	-	-	TO-220FM	-	62W (Tc)	150°C (TJ)
FCP190N65S3R0 MOSFET N-CH 650V 17A TO220-3 onsemi	535	-	询价单	数据表	SuperFET® III	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	190mOhm @ 8.5A, 10V	Through Hole	4.5V @ 1.7mA	33 nC @ 10 V	650 V	±30V	1350 pF @ 400 V	-	-	TO-220-3	-	144W (Tc)	-55°C ~ 150°C (TJ)
BSD214SN L6327 MOSFET N-CH 20V 1.5A SOT363-6 Infineon Technologies	4,669	-	询价单	数据表	OptiMOS™	6-VSSOP, SC-88, SOT-363	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	Surface Mount	1.2V @ 3.7µA	0.8 nC @ 5 V	20 V	±12V	143 pF @ 10 V	-	-	PG-SOT363-PO	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IXTP08N100P MOSFET N-CH 1000V 800MA TO220AB Littelfuse Inc.	247	-	询价单	数据表	Polar	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800mA (Tc)	10V	20Ohm @ 500mA, 10V	Through Hole	4V @ 50µA	11.3 nC @ 10 V	1000 V	±20V	240 pF @ 25 V	-	-	TO-220-3	-	42W (Tc)	-55°C ~ 150°C (TJ)
IPD78CN10NGBUMA1 MOSFET N-CH 100V 13A TO252-3 Infineon Technologies	5,268	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	78mOhm @ 13A, 10V	Surface Mount	4V @ 12µA	11 nC @ 10 V	100 V	±20V	716 pF @ 50 V	-	-	PG-TO252-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
IRFR430ATRPBF MOSFET N-CH 500V 5A DPAK Vishay Siliconix	1,748	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	1.7Ohm @ 3A, 10V	Surface Mount	4.5V @ 250µA	24 nC @ 10 V	500 V	±30V	490 pF @ 25 V	-	-	DPAK	-	110W (Tc)	-55°C ~ 150°C (TJ)
NVTFWS002N04CLTAG MOSFET N-CH 40V 28A/142A 8WDFN onsemi	1,490	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 142A (Tc)	4.5V, 10V	2.2mOhm @ 50A, 10V	Surface Mount	2V @ 90µA	49 nC @ 10 V	40 V	±20V	2940 pF @ 25 V	AEC-Q101	-	8-WDFN (3.3x3.3)	Automotive	3.2W (Ta), 85W (Tc)	-55°C ~ 175°C (TJ)
STD4N62K3 MOSFET N-CH 620V 3.8A DPAK STMicroelectronics	5,423	-	询价单	数据表	SuperMESH3™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.8A (Tc)	10V	1.95Ohm @ 1.9A, 10V	Surface Mount	4.5V @ 50µA	14 nC @ 10 V	620 V	±30V	450 pF @ 50 V	-	-	DPAK	-	70W (Tc)	150°C (TJ)

共 36322 条记录«上一页12 3 4...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878