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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIR140DP-T1-RE3 MOSFET N-CH 25V 71.9A/100A PPAK Vishay Siliconix	11,100	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	71.9A (Ta), 100A (Tc)	4.5V, 10V	0.67mOhm @ 20A, 10V	Surface Mount	2.1V @ 250µA	170 nC @ 10 V	25 V	+20V, -16V	8150 pF @ 10 V	-	-	PowerPAK® SO-8	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
FKI06108 MOSFET N-CH 60V 39A TO220F Sanken Electric USA Inc.	9,449	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	4.5V, 10V	8.8mOhm @ 28.5A, 10V	Through Hole	2.5V @ 650µA	38.6 nC @ 10 V	60 V	±20V	2520 pF @ 25 V	-	-	TO-220F	-	38W (Tc)	150°C (TJ)
TK12J60W,S1VE(S MOSFET N-CH 600V 11.5A TO3P Toshiba Semiconductor and Storage	6,276	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tray	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	Through Hole	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	TO-3P(N)	-	110W (Tc)	150°C
FKI07174 MOSFET N-CH 75V 31A TO220F Sanken Electric USA Inc.	8,620	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	4.5V, 10V	13.6mOhm @ 22.8A, 10V	Through Hole	2.5V @ 650µA	36.2 nC @ 10 V	75 V	±20V	2520 pF @ 25 V	-	-	TO-220F	-	38W (Tc)	150°C (TJ)
TPCA8128,L1Q MOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage	6,835	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	34A (Ta)	4.5V, 10V	4.8mOhm @ 17A, 10V	Surface Mount	2V @ 500µA	115 nC @ 10 V	30 V	+20V, -25V	4800 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C
FKI10300 MOSFET N-CH 100V 23A TO220F Sanken Electric USA Inc.	4,752	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	4.5V, 10V	27.9mOhm @ 17.1A, 10V	Through Hole	2.5V @ 650µA	35.8 nC @ 10 V	100 V	±20V	2540 pF @ 25 V	-	-	TO-220F	-	38W (Tc)	150°C (TJ)
STP48N30M8 MOSFET N-CH 300V TO220 STMicroelectronics	5,350	-	询价单	数据表	-	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT10H009SSS-13 MOSFET BVDSS: 61V-100V SO-8 T&R Diodes Incorporated	3,903	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 42A (Tc)	10V	9mOhm @ 10A, 10V	-	4V @ 250µA	29.8 nC @ 10 V	100 V	±20V	2085 pF @ 50 V	-	-	-	-	1.4W (Ta)	-55°C ~ 150°C (TJ)
STD18N65M2-EP MOSFET N-CH 650V 11A DPAK STMicroelectronics	4,242	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	375mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	14.4 nC @ 10 V	650 V	±25V	700 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
HAF1004-90STR-E MOSFET P-CHANNEL 60V 5A DPAK Renesas Electronics Corporation	3,162	-	询价单	数据表	-	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF6623TRPBF MOSFET N-CH 20V 16A DIRECTFET Infineon Technologies	8,465	-	询价单	数据表	HEXFET®	DirectFET™ Isometric ST	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 55A (Tc)	4.5V, 10V	5.7mOhm @ 15A, 10V	Surface Mount	2.2V @ 250µA	17 nC @ 4.5 V	20 V	±20V	1360 pF @ 10 V	-	-	DIRECTFET™ ST	-	1.4W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
NVMYS007N10MCLTWG PTNG 100V LL LFPAK4 onsemi	2,960	-	询价单	数据表	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 83A (Tc)	4.5V, 10V	7mOhm @ 25A, 10V	Surface Mount	3V @ 141µA	37 nC @ 10 V	100 V	±20V	2700 pF @ 50 V	AEC-Q101	-	LFPAK4 (5x6)	Automotive	3.8W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)
STD15N60DM6 MOSFET N-CH 600V 12A DPAK STMicroelectronics	2,483	-	询价单	数据表	MDmesh™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	-	338mOhm @ 6A, 10V	Surface Mount	4.75V @ 250µA	15.3 nC @ 10 V	600 V	±25V	607 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
PJMF990N65EC_T0_00001 650V SUPER JUNCTION MOSFET Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.7A (Tc)	10V	990mOhm @ 2A, 10V	Through Hole	4V @ 250µA	9.7 nC @ 10 V	650 V	±30V	306 pF @ 400 V	-	-	ITO-220AB-F	-	22.5W (Tc)	-55°C ~ 150°C (TJ)
FDS4141SN00136P MOSFET P-CH 40V 10.8A 8SOIC onsemi	9,085	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10.8A (Ta)	4.5V, 10V	13mOhm @ 10.5A, 10V	Surface Mount	3V @ 250µA	49 nC @ 10 V	40 V	±20V	2670 pF @ 20 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SUD35N10-26P-BE3 MOSFET N-CH 100V 12A/35A DPAK Vishay Siliconix	1,504	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 35A (Tc)	7V, 10V	26mOhm @ 12A, 10V	Surface Mount	4.4V @ 250µA	47 nC @ 10 V	100 V	±20V	2000 pF @ 12 V	-	-	TO-252AA	-	8.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
64-4095PBF MOSFET N-CH SMD D2PAK Infineon Technologies	9,941	-	询价单	数据表	-	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPF050N10NF2SATMA1 MOSFET Infineon Technologies	1,311	-	询价单	数据表	StrongIRFET™ 2	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	19A (Ta), 117A (Tc)	6V, 10V	5.05mOhm @ 60A, 10V	Surface Mount	3.8V @ 84µA	76 nC @ 10 V	100 V	±20V	3600 pF @ 50 V	-	-	PG-TO263-7	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
AUIRF2804L-313 MOSFET N-CH 40V 195A TO262 Infineon Technologies	4,448	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	2.3mOhm @ 75A, 10V	Through Hole	4V @ 250µA	240 nC @ 10 V	40 V	±20V	6450 pF @ 25 V	AEC-Q101	-	TO-262	Automotive	300W (Tc)	-55°C ~ 175°C (TJ)
IRFBC40PBF-BE3 MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	1,018	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Tc)	-	1.2Ohm @ 3.7A, 10V	Through Hole	4V @ 250µA	60 nC @ 10 V	600 V	±20V	1300 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)

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