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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFSL4010-306

AUIRFSL4010-306

MOSFET N-CH 100V 180A TO262

Infineon Technologies

6,419 -
AUIRFSL4010-306

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.7mOhm @ 106A, 10V Through Hole 4V @ 250µA 215 nC @ 10 V 100 V ±20V 9575 pF @ 50 V AEC-Q101 - TO-262 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
RJK0455DPB-00#J5

RJK0455DPB-00#J5

MOSFET N-CH 40V 45A LFPAK

Renesas Electronics Corporation

7,490 -
RJK0455DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Ta) 10V 3.8mOhm @ 22.5A, 10V Surface Mount - 34 nC @ 10 V 40 V ±20V 2550 pF @ 10 V - - LFPAK - 60W (Tc) 150°C (TJ)
AUIRFSL4010-313

AUIRFSL4010-313

MOSFET N-CH 100V 180A TO262

Infineon Technologies

8,751 -
AUIRFSL4010-313

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.7mOhm @ 106A, 10V Through Hole 4V @ 250µA 215 nC @ 10 V 100 V ±20V 9575 pF @ 50 V AEC-Q101 - TO-262 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
PCF6294W

PCF6294W

IC MOSFET N-CH 30V

onsemi

6,498 -
PCF6294W

数据表

- - Bulk Obsolete - - 13A (Tj) - - - - - - - - - - - - - -
SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

MOSFET N-CH 600V 8A PPAK SO-8

Vishay Siliconix

2,881 -
SIHJ8N60E-T1-GE3

数据表

- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 520mOhm @ 4A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 600 V ±30V 754 pF @ 100 V - - PowerPAK® SO-8 - 89W (Tc) -55°C ~ 150°C (TJ)
FDC658APG

FDC658APG

MOSFET P-CH 30V 4A SSOT6

onsemi

4,239 -
FDC658APG

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFBC30ASPBF

IRFBC30ASPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix

2,169 -
IRFBC30ASPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V Surface Mount 4.5V @ 250µA 23 nC @ 10 V 600 V ±30V 510 pF @ 25 V - - TO-263 (D2PAK) - 74W (Tc) -55°C ~ 150°C (TJ)
NVMJST3D3N04CTXG

NVMJST3D3N04CTXG

TRENCH 6 40V LFPAK 5X7

onsemi

3,000 -
NVMJST3D3N04CTXG

数据表

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 157A (Tc) 10V 3.3mOhm @ 50A, 10V Surface Mount 3.5V @ 60µA 23 nC @ 10 V 40 V ±20V 1600 pF @ 25 V AEC-Q101 - 10-TCPAK Automotive 150W (Tc) -55°C ~ 175°C (TJ)
STL105N8F7AG

STL105N8F7AG

AUTOMOTIVE N-CHANNEL 80 V, 5.6 M

STMicroelectronics

2,994 -
STL105N8F7AG

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 6.5mOhm @ 25A, 10V Surface Mount 4.5V @ 250µA 46 nC @ 10 V 80 V ±20V 3475 pF @ 25 V AEC-Q101 - PowerFlat™ (5x6) Automotive 127W (Tc) -55°C ~ 175°C (TJ)
DMT10H9M9LSS-13

DMT10H9M9LSS-13

MOSFET BVDSS: 61V~100V SO-8 T&R

Diodes Incorporated

3,260 -
DMT10H9M9LSS-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SQJQ150E-T1_GE3

SQJQ150E-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

1,960 -
SQJQ150E-T1_GE3

数据表

TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 233A (Tc) 10V 1.9mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 92 nC @ 10 V 40 V ±20V 4643 pF @ 25 V AEC-Q101 - PowerPAK® 8 x 8 Automotive 187W (Tc) -55°C ~ 175°C (TJ)
DMT10H9M9SSS-13

DMT10H9M9SSS-13

MOSFET BVDSS: 61V~100V SO-8 T&R

Diodes Incorporated

2,589 -
DMT10H9M9SSS-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK60F10N1L,LXGQ

TK60F10N1L,LXGQ

MOSFET N-CH 100V 60A TO220SM

Toshiba Semiconductor and Storage

1,750 -
TK60F10N1L,LXGQ

数据表

U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Ta) 6V, 10V 6.11mOhm @ 30A, 10V Surface Mount 3.5V @ 500µA 60 nC @ 10 V 100 V ±20V 4320 pF @ 10 V - - TO-220SM(W) - 205W (Tc) 175°C
DMP4013SPS-13

DMP4013SPS-13

MOSFET P-CH 40V 11A PWRDI5060

Diodes Incorporated

9,165 -
DMP4013SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11A (Ta), 61A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V Surface Mount 3V @ 250µA 67 nC @ 10 V 40 V ±20V 4004 pF @ 20 V - - PowerDI5060-8 - 1.6W (Ta) -55°C ~ 150°C (TJ)
R6004JNJGTL

R6004JNJGTL

MOSFET N-CH 600V 4A LPTS

Rohm Semiconductor

993 -
R6004JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 15V 1.43Ohm @ 2A, 15V Surface Mount 7V @ 450µA 10.5 nC @ 15 V 600 V ±30V 260 pF @ 100 V - - LPTS - 60W (Tc) -55°C ~ 150°C (TJ)
FDS9435ANBAD008

FDS9435ANBAD008

MOSFET P-CH 30V 5.3A 8-SOIC

onsemi

7,701 -
FDS9435ANBAD008

数据表

- - Tape & Reel (TR) Obsolete - - 5.3A (Tj) - - - - - - - - - - - - - -
MCAC80N04Y-TP

MCAC80N04Y-TP

MOSFET N-CH 40 80A DFN5060

Micro Commercial Co

4,059 -
MCAC80N04Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 2.6mOhm @ 40A, 10V Surface Mount 4V @ 250µA 87 nC @ 10 V 40 V ±20V 3460 pF @ 20 V - - DFN5060 - 104.2W (Tj) -55°C ~ 150°C (TJ)
R6509END3TL1

R6509END3TL1

650V 9A TO-252, LOW-NOISE POWER

Rohm Semiconductor

4,421 -
R6509END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 585mOhm @ 2.8A, 10V Surface Mount 4V @ 230µA 24 nC @ 10 V 650 V ±20V 430 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
FDC637ANNB5E023A

FDC637ANNB5E023A

MOSFET N-CH 20V 6.2A SSOT-6

onsemi

7,789 -
FDC637ANNB5E023A

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
SPD30N03S2L10T

SPD30N03S2L10T

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

6,802 -
SPD30N03S2L10T

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Surface Mount 2V @ 50µA 41.8 nC @ 10 V 30 V ±20V 1550 pF @ 25 V - - PG-TO252-3-11 - 100W (Tc) -55°C ~ 175°C (TJ)
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