富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMTH6016LFDFW-7

DMTH6016LFDFW-7

MOSFET N-CH 60V 9.4A 6UDFN

Diodes Incorporated

2,860 -
DMTH6016LFDFW-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 3V @ 250µA 15.3 nC @ 10 V 60 V ±20V 925 pF @ 30 V AEC-Q101 - U-DFN2020-6 (SWP) (Type F) Automotive 1.06W (Ta) -55°C ~ 175°C (TJ)
DMN6066SSSQ-13

DMN6066SSSQ-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

Diodes Incorporated

2,500 -
DMN6066SSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.7A (Ta) 4.5V, 10V 66mOhm @ 4.5A, 10V Surface Mount 3V @ 250µA 10.3 nC @ 10 V 60 V ±20V 502 pF @ 30 V AEC-Q101 - 8-SOP Automotive 1.56W (Ta) -55°C ~ 150°C (TJ)
DMN3010LSS-13

DMN3010LSS-13

MOSFET N-CH 30V 16A 8SOP

Diodes Incorporated

2,357 -
DMN3010LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 9mOhm @ 16A, 10V Surface Mount 2V @ 250µA 43.7 nC @ 10 V 30 V ±20V 2096 pF @ 15 V - - 8-SOP - 2.5W (Ta) -55°C ~ 150°C (TJ)
DMNH6042SK3-13

DMNH6042SK3-13

MOSFET N-CH 60V 25A TO252

Diodes Incorporated

2,297 -
DMNH6042SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 50mOhm @ 6A, 10V Surface Mount 3V @ 250µA 8.8 nC @ 10 V 60 V ±20V 492 pF @ 25 V AEC-Q101 - TO-252-3 Automotive 2W (Ta) -55°C ~ 175°C (TJ)
DMN6017SFV-7

DMN6017SFV-7

MOSFET N-CH 60V 35A POWERDI3333

Diodes Incorporated

1,882 -
DMN6017SFV-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 18mOhm @ 6A, 10V Surface Mount 3V @ 250µA 55 nC @ 10 V 60 V ±20V 2711 pF @ 15 V - - PowerDI3333-8 (Type UX) - 1W (Ta) -55°C ~ 150°C (TJ)
DMTH6012LPSWQ-13

DMTH6012LPSWQ-13

MOSFET N-CH 60V 11.5/50.5A PWRDI

Diodes Incorporated

1,795 -
DMTH6012LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta), 50.5A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 13.6 nC @ 10 V 60 V ±20V 785 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type Q) Automotive 2.8W (Ta), 53.6W (Tc) -55°C ~ 175°C (TJ)
DMN6069SFGQ-7

DMN6069SFGQ-7

MOSFET N-CH 60V 18A POWERDI3333

Diodes Incorporated

5,535 -
DMN6069SFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 50mOhm @ 4.5A, 10V Surface Mount 3V @ 250µA 25 nC @ 10 V 60 V ±20V 1480 pF @ 30 V - - PowerDI3333-8 - 2.4W -55°C ~ 150°C (TJ)
SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

MOSFET N-CH 25V 20.1A/40A PPAK

Vishay Siliconix

4,670 -
SIAA00DJ-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.1A (Ta), 40A (Tc) 4.5V, 10V 5.6mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 10 V 25 V +16V, -12V 1090 pF @ 12.5 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ)
IRF8721TRPBFXTMA1

IRF8721TRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

4,000 -
IRF8721TRPBFXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
ISP13DP06NMSATMA1

ISP13DP06NMSATMA1

MOSFET P-CH 60V SOT223

Infineon Technologies

3,000 -
ISP13DP06NMSATMA1

数据表

OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.8A (Ta) - - Surface Mount - - 60 V ±20V - - - PG-SOT223 - - -
RQ1C075UNTR

RQ1C075UNTR

MOSFET N-CH 20V 7.5A TSMT8

Rohm Semiconductor

2,960 -
RQ1C075UNTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 1.5V, 4.5V 16mOhm @ 7.5A, 4.5V Surface Mount 1V @ 1mA 18 nC @ 4.5 V 20 V ±10V 1400 pF @ 10 V - - TSMT8 - 700mW (Ta) 150°C (TJ)
DMN6069SFGQ-13

DMN6069SFGQ-13

MOSFET N-CH 60V 18A POWERDI3333

Diodes Incorporated

2,945 -
DMN6069SFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 50mOhm @ 4.5A, 10V Surface Mount 3V @ 250µA 25 nC @ 10 V 60 V ±20V 1480 pF @ 30 V - - PowerDI3333-8 - 2.4W -55°C ~ 150°C (TJ)
DMTH10H032SPSWQ-13

DMTH10H032SPSWQ-13

MOSFET BVDSS: 61V~100V PowerDI50

Diodes Incorporated

2,488 -
DMTH10H032SPSWQ-13

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 32mOhm @ 5A, 10V Surface Mount, Wettable Flank 4V @ 250µA 8 nC @ 10 V 100 V ±20V 544 pF @ 50 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ)
DMTH47M2LPSWQ-13

DMTH47M2LPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,216 -
DMTH47M2LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 73A (Tc) 4.5V, 10V 7.3mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.3V @ 250µA 14 nC @ 10 V 40 V ±20V 891 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
IAUCN04S7L011ATMA1

IAUCN04S7L011ATMA1

MOSFET_(20V 40V)

Infineon Technologies

915 -
IAUCN04S7L011ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 222A (Tj) 4.5V, 10V 1.13mOhm @ 60A, 10V Surface Mount 1.8V @ 45µA 64 nC @ 10 V 40 V ±16V 4240 pF @ 20 V AEC-Q101 - PG-TDSON-8-34 Automotive 105W (Tc) -55°C ~ 175°C (TJ)
PJD80N04_L2_00001

PJD80N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

507 -
PJD80N04_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 4.5 V 40 V ±20V 1258 pF @ 25 V - - TO-252AA - 2W (Ta), 66W (Tc) -55°C ~ 150°C (TJ)
PJQ4534P-AU_R2_002A1

PJQ4534P-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

5,000 -
PJQ4534P-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ2566A_R1_00201

PJQ2566A_R1_00201

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJQ2566A_R1_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TP89R103NL,LQ

TP89R103NL,LQ

MOSFET N CH 30V 15A 8SOP

Toshiba Semiconductor and Storage

2,200 -
TP89R103NL,LQ

数据表

U-MOSVIII-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 9.1mOhm @ 7.5A, 10V Surface Mount 2.3V @ 100µA 9.8 nC @ 10 V 30 V ±20V 820 pF @ 15 V - - 8-SOP - 1W (Tc) 150°C (TJ)
DIT090N06

DIT090N06

MOSFET TO220AB N 65V 0.0057OHM

Diotec Semiconductor

994 -
DIT090N06

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 7mOhm @ 30A, 10V Through Hole 4V @ 250µA 94 nC @ 10 V 65 V ±20V 3400 pF @ 25 V - - TO-220AB - 160W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户