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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4322DY-T1-GE3

SI4322DY-T1-GE3

MOSFET N-CH 30V 18A 8SO

Vishay Siliconix

8,287 -
SI4322DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 8.5mOhm @ 15A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1640 pF @ 15 V - - 8-SOIC - 3.1W (Ta), 5.4W (Tc) -55°C ~ 150°C (TJ)
SUD50N10-34P-T4-E3

SUD50N10-34P-T4-E3

MOSFET N-CH 100V 5.9A/20A TO252

Vishay Siliconix

8,573 -
SUD50N10-34P-T4-E3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.9A (Ta), 20A (Tc) 6V, 10V 34mOhm @ 7A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 100 V ±20V 1800 pF @ 25 V - - TO-252AA - 2.5W (Ta), 56W (Tc) -55°C ~ 150°C (TJ)
FDP8N50NZ

FDP8N50NZ

MOSFET N-CH 500V 8A TO220-3

onsemi

8,007 -
FDP8N50NZ

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 500 V ±25V 735 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 150°C (TJ)
XP83T03GJB

XP83T03GJB

MOSFET N-CH 30V 75A TO251S

YAGEO XSEMI

970 -
XP83T03GJB

数据表

XP83T03 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 6mOhm @ 40A, 10V Through Hole 3V @ 250µA 34 nC @ 4.5 V 30 V ±20V 1840 pF @ 25 V - - TO-251S - 60W (Tc) -55°C ~ 175°C (TJ)
FQPF5N80

FQPF5N80

MOSFET N-CH 800V 2.8A TO220F

onsemi

4,313 -
FQPF5N80

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.6Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 33 nC @ 10 V 800 V ±30V 1250 pF @ 25 V - - TO-220F-3 - 47W (Tc) -55°C ~ 150°C (TJ)
DMP6110SVTQ-13

DMP6110SVTQ-13

MOSFET P-CH 60V 7.3A TSOT26

Diodes Incorporated

9,958 -
DMP6110SVTQ-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 105mOhm @ 4.5A, 10V Surface Mount 3V @ 250µA 17.2 nC @ 10 V 60 V ±20V 969 pF @ 30 V AEC-Q101 - TSOT-23-6 Automotive 1.8W (Ta) -55°C ~ 150°C (TJ)
STD11N60M6

STD11N60M6

DISCRETE

STMicroelectronics

3,546 -
STD11N60M6

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 520mOhm @ 4A, 10V Surface Mount 4.75V @ 250µA 10.3 nC @ 10 V 600 V ±25V 387 pF @ 100 V - - TO-252 (DPAK) - 90W (Tc) -55°C ~ 150°C (TJ)
MCAC014N10Y-TP

MCAC014N10Y-TP

MOSFET N-CH 100 60A DFN5060

Micro Commercial Co

4,894 -
MCAC014N10Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 14mOhm @ 25A, 10V Surface Mount 3V @ 250µA 30 nC @ 10 V 100 V ±20V 1305 pF @ 50 V - - DFN5060 - 104W (Tj) -55°C ~ 150°C (TJ)
TLC530FTU

TLC530FTU

MOSFET N-CH 330V 7A TO220-3

onsemi

2,789 -
TLC530FTU

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) - - Through Hole - - 330 V - - - - TO-220-3 - - -
SISA18BDN-T1-GE3

SISA18BDN-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

3,000 -
SISA18BDN-T1-GE3

数据表

TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 60A (Tc) 4.5V, 10V 6.83mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 19 nC @ 10 V 30 V +20V, -16V 680 pF @ 15 V - - PowerPAK® 1212-8PT - 3.2W (Ta), 36.8W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C670NLWFAFT3G

NVMFS5C670NLWFAFT3G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi

9,311 -
NVMFS5C670NLWFAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 17A (Ta), 71A (Tc) 4.5V, 10V 6.1mOhm @ 35A, 10V Surface Mount 2V @ 53µA 20 nC @ 10 V 60 V ±20V 1400 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 61W (Tc) -55°C ~ 175°C (TJ)
RQ5P035BGTCL

RQ5P035BGTCL

100V 3.5A TSMT3, POWER MOSFET :

Rohm Semiconductor

2,910 -
RQ5P035BGTCL

数据表

- SC-96 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 60mOhm @ 3.5A, 10V Surface Mount 2.5V @ 1mA 6.7 nC @ 10 V 100 V ±20V 305 pF @ 50 V - - TSMT3 - 700mW (Ta) 150°C (TJ)
FQI50N06TU

FQI50N06TU

MOSFET N-CH 60V 50A I2PAK

onsemi

4,186 -
FQI50N06TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 22mOhm @ 25A, 10V Through Hole 4V @ 250µA 41 nC @ 10 V 60 V ±25V 1540 pF @ 25 V - - TO-262 (I2PAK) - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ)
GT009N04D5

GT009N04D5

N40V,100A,RD<1.3M@10V,VTH1.0V~2.

Goford Semiconductor

6,998 -
GT009N04D5

数据表

- 8-PowerTDFN Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 86 nC @ 10 V 45 V ±20V 6864 pF @ 20 V - - 8-DFN (4.9x5.75) - 125W (Tc) -55°C ~ 150°C (TJ)
IRFR010TR

IRFR010TR

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix

4,435 -
IRFR010TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 50 V ±20V 250 pF @ 25 V - - DPAK - 25W (Tc) -55°C ~ 150°C (TJ)
FDPF6N60ZUT

FDPF6N60ZUT

MOSFET N-CH 600V 4.5A TO220F

onsemi

7,178 -
FDPF6N60ZUT

数据表

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±30V 865 pF @ 25 V - - TO-220F-3 - 33.8W (Tc) -55°C ~ 150°C (TJ)
MSJAC11N65B-TP

MSJAC11N65B-TP

MOSFET N-CH 650V 11A DFN5060

Micro Commercial Co

4,586 -
MSJAC11N65B-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A 10V 380mOhm @ 3.2A, 10V Surface Mount 4V @ 250µA 21 nC @ 10 V 650 V ±30V 791 pF @ 25 V - - DFN5060 - 89W (Tc) -55°C ~ 150°C (TJ)
FQP19N20C

FQP19N20C

MOSFET N-CH 200V 19A TO220-3

onsemi

7,397 -
FQP19N20C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 170mOhm @ 9.5A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 200 V ±30V 1080 pF @ 25 V - - TO-220-3 - 139W (Tc) -55°C ~ 150°C (TJ)
IRLZ14STRRPBF

IRLZ14STRRPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix

5,227 -
IRLZ14STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V Surface Mount 2V @ 250µA 8.4 nC @ 5 V 60 V ±10V 400 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
IRF520STRL

IRF520STRL

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix

9,945 -
IRF520STRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 360 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
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