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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
XP3N2R8AMT MOSFET N-CH 30V 32.8A 60A PMPAK YAGEO XSEMI	1,000	-	询价单	数据表	XP3N2R8A	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32.8A (Ta), 60A (Tc)	4.5V, 10V	2.8mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	40 nC @ 4.5 V	30 V	±20V	4080 pF @ 15 V	-	-	PMPAK® 5 x 6	-	5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
XP3R303GMT-L MOSFET N-CH 30V 31A 105A PMPAK YAGEO XSEMI	1,000	-	询价单	数据表	XP3R303	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	31A (Ta), 105A (Tc)	4.5V, 10V	3.3mOhm @ 30A, 10V	Surface Mount	3V @ 250µA	21 nC @ 4.5 V	30 V	±20V	2240 pF @ 25 V	-	-	PMPAK® 5 x 6	-	5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
DMTH69M8LFVWQ-7 MOSFET BVDSS: 41V-60V POWERDI333 Diodes Incorporated	150	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.9A (Ta), 45.4A (Tc)	4.5V, 10V	9.5mOhm @ 13.5A, 10V	Surface Mount, Wettable Flank	3V @ 250µA	33.5 nC @ 10 V	60 V	±16V	1925 pF @ 30 V	AEC-Q101	-	PowerDI3333-8 (SWP) Type UX	Automotive	3.6W (Ta), 29.4W (Tc)	-55°C ~ 175°C (TJ)
SSM6K818R,LF N-CH MOSFET 30V, +/-20V, 15A ,0. Toshiba Semiconductor and Storage	5,583	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	4.5V, 10V	12mOhm @ 4A, 4.5V	Surface Mount	2.1V @ 100µA	7.5 nC @ 4.5 V	30 V	±20V	1130 pF @ 15 V	AEC-Q101	-	6-TSOP-F	Automotive	1.5W (Ta)	150°C
SSM6K804R,LF N-CH MOSFET 40V, +/-20V, 12A ,0. Toshiba Semiconductor and Storage	5,180	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	4.5V, 10V	12mOhm @ 4A, 10V	Surface Mount	2.4V @ 100µA	7.5 nC @ 4.5 V	40 V	±20V	1110 pF @ 20 V	-	-	6-TSOP-F	-	1.5W (Ta)	175°C
ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 Infineon Technologies	5,000	-	询价单	数据表	StrongIRFET™ 2	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 72A (Tc)	4.5V, 10V	5.6mOhm @ 20A, 10V	Surface Mount	2.35V @ 30µA	11 nC @ 4.5 V	30 V	±20V	1012 pF @ 15 V	-	-	PG-TSDSON-8 FL	-	3W (Ta), 52W (Tc)	-55°C ~ 175°C (TJ)
TSM180P03CS RLG MOSFET P-CHANNEL 30V 10A 8SOP Taiwan Semiconductor Corporation	4,168	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Tc)	4.5V, 10V	18mOhm @ 8A, 10V	Surface Mount	2.5V @ 250µA	23 nC @ 4.5 V	30 V	±20V	1730 pF @ 15 V	-	-	8-SOP	-	2.5W (Tc)	150°C (TJ)
IRLR120NTRR MOSFET N-CH 100V 10A DPAK Infineon Technologies	6,381	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4V, 10V	185mOhm @ 6A, 10V	Surface Mount	2V @ 250µA	20 nC @ 5 V	100 V	±16V	440 pF @ 25 V	-	-	TO-252AA (DPAK)	-	48W (Tc)	-55°C ~ 175°C (TJ)
SIHU6N65E-GE3 MOSFET N-CH 650V 7A IPAK Vishay Siliconix	6,491	-	询价单	数据表	-	TO-251-3 Long Leads, IPAK, TO-251AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3A, 10V	Through Hole	4V @ 250µA	48 nC @ 10 V	650 V	±30V	820 pF @ 100 V	-	-	IPAK (TO-251)	-	78W (Tc)	-55°C ~ 150°C (TJ)
FQD6N60CTM MOSFET N-CH 600V 4A DPAK onsemi	3,313	-	询价单	数据表	QFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2Ohm @ 2A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	600 V	±30V	810 pF @ 25 V	-	-	TO-252AA	-	80W (Tc)	-55°C ~ 150°C (TJ)
SI4840DY-T1-GE3 MOSFET N-CH 40V 10A 8SO Vishay Siliconix	3,091	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	9mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	28 nC @ 5 V	40 V	±20V	-	-	-	8-SOIC	-	1.56W (Ta)	-55°C ~ 150°C (TJ)
XP152A12C0MR-G MOSFET P-CH 20V 700MA SOT23 Torex Semiconductor Ltd	3,000	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	700mA (Ta)	2.5V, 4.5V	300mOhm @ 400mA, 4.5V	Surface Mount	1.2V @ 1mA	-	20 V	±12V	180 pF @ 10 V	-	-	SOT-23	-	500mW (Ta)	150°C (TA)
FDC5661N FET 60V 50.0 MOHM SSOT6 onsemi	2,885	-	询价单	数据表	PowerTrench®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Ta)	4.5V, 10V	47mOhm @ 4.3A, 10V	Surface Mount	3V @ 250µA	19 nC @ 10 V	60 V	±20V	763 pF @ 25 V	-	-	TSOT-23-6	-	1.6W (Ta)	-55°C ~ 150°C (TJ)
DMT3006LFV-13 MOSFET N-CH 30V 60A POWERDI3333 Diodes Incorporated	2,875	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	7mOhm @ 9A, 10V	Surface Mount	3V @ 250µA	8.4 nC @ 10 V	30 V	±20V	1155 pF @ 15 V	-	-	PowerDI3333-8	-	2W (Ta)	-55°C ~ 150°C (TJ)
DMT10H072LFDF-7 MOSFET N-CH 100V 4A 6UDFN Diodes Incorporated	1,980	-	询价单	数据表	-	6-UDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	4.5V, 10V	62mOhm @ 4.5A, 10V	Surface Mount	3V @ 250µA	5.1 nC @ 10 V	100 V	±20V	266 pF @ 50 V	-	-	U-DFN2020-6 (Type F)	-	800mW (Ta)	-55°C ~ 150°C (TJ)
DMTH12H007SK3-13 MOSFET BVDSS: 101V~250V TO252 T& Diodes Incorporated	3,519	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	86A (Tc)	10V	8.9mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	120 V	±20V	3142 pF @ 60 V	-	-	TO-252 (DPAK)	-	2W (Ta)	-55°C ~ 175°C (TJ)
DMT3009LFVWQ-7 MOSFET N-CH 30V 12A PWRDI3333 Diodes Incorporated	1,270	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 50A (Tc)	3.8V, 10V	11mOhm @ 14.4A, 10V	Surface Mount, Wettable Flank	3V @ 250µA	12 nC @ 10 V	30 V	±20V	823 pF @ 15 V	AEC-Q101	-	PowerDI3333-8 (SWP) Type UX	Automotive	2.3W (Ta), 35.7W (Tc)	-55°C ~ 150°C (TJ)
IRF3704ZCSTRRP MOSFET N-CH 20V 67A D2PAK Infineon Technologies	6,321	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	4.5V, 10V	7.9mOhm @ 21A, 10V	Surface Mount	2.55V @ 250µA	13 nC @ 4.5 V	20 V	±20V	1220 pF @ 10 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
IRF3704ZCSTRLP MOSFET N-CH 20V 67A D2PAK Infineon Technologies	3,050	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	4.5V, 10V	7.9mOhm @ 21A, 10V	Surface Mount	2.55V @ 250µA	13 nC @ 4.5 V	20 V	±20V	1220 pF @ 10 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
IRFD9024PBF MOSFET P-CH 60V 1.6A 4DIP Vishay Siliconix	2,287	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.6A (Ta)	10V	280mOhm @ 960mA, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)

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