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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUXCLFZ24NSTRL

AUXCLFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies

8,044 -
AUXCLFZ24NSTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 70mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V ±20V 370 pF @ 25 V - - D2PAK - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
IRFZ46NSTRRPBF

IRFZ46NSTRRPBF

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies

8,386 -
IRFZ46NSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 16.5mOhm @ 28A, 10V Surface Mount 4V @ 250µA 72 nC @ 10 V 55 V ±20V 1696 pF @ 25 V - - D2PAK - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
DMTH8028LFVWQ-7

DMTH8028LFVWQ-7

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

2,490 -
DMTH8028LFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 10.4 nC @ 10 V 80 V ±20V 631 pF @ 40 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.5W (Ta) -55°C ~ 175°C (TJ)
TSM250NB06LCV RGG

TSM250NB06LCV RGG

60V, 27A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

10,000 -
TSM250NB06LCV RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 27A (Tc) 4.5V, 10V 25mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 60 V ±20V 1307 pF @ 30 V - - 8-PDFN (3.15x3.1) - 1.9W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
TSM110NB04LCV RGG

TSM110NB04LCV RGG

40V, 44A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,996 -
TSM110NB04LCV RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 44A (Tc) 4.5V, 10V 11mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 10 V 40 V ±20V 1329 pF @ 20 V - - 8-PDFN (3.15x3.1) - 1.9W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
TSM250NB06CV RGG

TSM250NB06CV RGG

60V, 28A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,980 -
TSM250NB06CV RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 28A (Tc) 7V, 10V 25mOhm @ 6A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 60 V ±20V 1440 pF @ 30 V - - 8-PDFN (3.15x3.1) - 1.9W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
SIA4446DJ-T1-GE3

SIA4446DJ-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

5,682 -
SIA4446DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 31A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 19 nC @ 10 V 40 V +20V, -16V 915 pF @ 20 V - - PowerPAK® SC-70-6 Dual - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ)
NTMFS024N06CT1G

NTMFS024N06CT1G

MOSFET N-CH 60V 8A/25A 5DFN

onsemi

1,413 -
NTMFS024N06CT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta), 25A (Tc) 10V 22mOhm @ 3A, 10V Surface Mount 4V @ 20µA 5.7 nC @ 10 V 60 V ±20V 333 pF @ 30 V - - 5-DFN (5x6) (8-SOFL) - 3.4W (Ta), 28W (Tc) -55°C ~ 175°C (TJ)
XP4024EM

XP4024EM

MOSFET N-CH 30V 18.5A 8-SO

YAGEO XSEMI

975 -
XP4024EM

数据表

XP4024E 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18.5A (Ta) 4.5V, 10V 4.5mOhm @ 18A, 10V Surface Mount 3V @ 250µA 28 nC @ 4.5 V 30 V ±20V 2720 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
MCG35N04HE3-TP

MCG35N04HE3-TP

N-CHANNEL MOSFET, DFN3333

Micro Commercial Co

9,995 -
MCG35N04HE3-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 40 V ±20V 2000 pF @ 25 V AEC-Q101 - DFN3333 Automotive 40W (Tj) -55°C ~ 150°C (TJ)
SI4848BDY-T1-GE3

SI4848BDY-T1-GE3

N-CHANNEL 150-V (D-S) MOSFET SO-

Vishay Siliconix

9,838 -
SI4848BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.7A (Ta), 5A (Tc) 6V, 10V 89mOhm @ 3.7A, 10V Surface Mount 4V @ 250µA 9 nC @ 10 V 150 V ±20V 400 pF @ 75 V - - 8-SOIC - 2.5W (Ta), 4.5W (Tc) -55°C ~ 150°C (TJ)
PJD16P06A-AU_L2_000A1

PJD16P06A-AU_L2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,847 -
PJD16P06A-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Ta), 16A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 22 nC @ 10 V 60 V ±20V 1256 pF @ 30 V AEC-Q101 - TO-252AA Automotive 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
SIA112LDJ-T1-GE3

SIA112LDJ-T1-GE3

N-CHANNEL 100-V (D-S) MOSFET POW

Vishay Siliconix

5,610 -
SIA112LDJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta), 8.8A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 11.8 nC @ 10 V 100 V ±25V 355 pF @ 50 V - - PowerPAK® SC-70-6 - 2.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ)
DMT35M7LFV-7

DMT35M7LFV-7

MOSFET N-CH 30V 76A POWERDI3333

Diodes Incorporated

5,070 -
DMT35M7LFV-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 36 nC @ 10 V 30 V ±20V 1667 pF @ 15 V - - PowerDI3333-8 (Type UX) - 1.98W (Ta) -55°C ~ 150°C (TJ)
TQM300NB06CV RGG

TQM300NB06CV RGG

MOSFET

Taiwan Semiconductor Corporation

5,000 -
TQM300NB06CV RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 7V, 10V 30mOhm @ 11A, 10V Surface Mount 3.8V @ 250µA 16 nC @ 10 V 60 V ±20V 975 pF @ 30 V AEC-Q101 - 8-PDFN (3.15x3.1) Automotive 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
TQM130NB04CV RGG

TQM130NB04CV RGG

MOSFET

Taiwan Semiconductor Corporation

4,990 -
TQM130NB04CV RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 7V, 10V 13mOhm @ 19A, 10V Surface Mount 3.8V @ 250µA 18 nC @ 10 V 40 V ±20V 994 pF @ 20 V AEC-Q101 - 8-PDFN (3.15x3.1) Automotive 2.4W (Ta), 35W (Tc) -55°C ~ 150°C (TJ)
IRFL024Z

IRFL024Z

MOSFET N-CH 55V 5.1A SOT223

Infineon Technologies

7,797 -
IRFL024Z

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.1A (Ta) 10V 57.5mOhm @ 3.1A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 55 V ±20V 340 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AONS66817

AONS66817

SINGLE

Alpha & Omega Semiconductor Inc.

3,827 -
AONS66817

数据表

AlphaSGT2™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 120A (Tc) 8V, 10V 4.1mOhm @ 20A, 10V Surface Mount 3.8V @ 250µA 54 nC @ 10 V 80 V ±20V 2860 pF @ 40 V - - 8-DFN (5x6) - 6.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
STD3NM60T4

STD3NM60T4

MOSFET N-CH 600V 3A DPAK

STMicroelectronics

9,746 -
STD3NM60T4

数据表

MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.5Ohm @ 1.5A, 10V Surface Mount 5V @ 250µA 14 nC @ 10 V 600 V ±30V 324 pF @ 25 V - - DPAK - 42W (Tc) -65°C ~ 150°C (TJ)
SIRA00DP-T1-RE3

SIRA00DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix

3,247 -
SIRA00DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 220 nC @ 10 V 30 V +20V, -16V 11700 pF @ 15 V - - PowerPAK® SO-8 - 104W (Tc) -55°C ~ 150°C (TJ)
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