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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN1R4-40YLD/2X

PSMN1R4-40YLD/2X

PSMN1R4-40YLD/SOT669/LFPAK

Nexperia USA Inc.

9,582 -
PSMN1R4-40YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 4.5V, 10V 1.4mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 143 nC @ 10 V 40 V ±20V 6661 pF @ 20 V - - LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
AOTF12N60

AOTF12N60

MOSFET N-CH 600V 12A TO220-3F

Alpha & Omega Semiconductor Inc.

2,403 -
AOTF12N60

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 550mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 50 nC @ 10 V 600 V ±30V 2100 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
US5U35TR

US5U35TR

MOSFET P-CH 45V 700MA TUMT5

Rohm Semiconductor

2,975 -
US5U35TR

数据表

- 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 700mA (Ta) 4V, 10V 800mOhm @ 700mA, 10V Surface Mount 2.5V @ 1mA 1.7 nC @ 5 V 45 V ±20V 120 pF @ 10 V - Schottky Diode (Isolated) TUMT5 - 1W (Ta) 150°C (TJ)
DMT3006LFVQ-7

DMT3006LFVQ-7

MOSFET N-CH 30V 60A POWERDI3333

Diodes Incorporated

2,687 -
DMT3006LFVQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 7mOhm @ 9A, 10V Surface Mount 3V @ 250µA 16.7 nC @ 10 V 30 V ±20V 1155 pF @ 15 V AEC-Q101 - PowerDI3333-8 (Type UX) Automotive 1W (Ta) -55°C ~ 150°C (TJ)
RZQ045P01TR

RZQ045P01TR

MOSFET P-CH 12V 4.5A TSMT6

Rohm Semiconductor

355 -
RZQ045P01TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 1.5V, 4.5V 35mOhm @ 4.5A, 4.5V Surface Mount 1V @ 1mA 31 nC @ 4.5 V 12 V ±10V 2450 pF @ 6 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
TSM150NB04CR RLG

TSM150NB04CR RLG

MOSFET N-CH 40V 10A/41A 8PDFN

Taiwan Semiconductor Corporation

5,000 -
TSM150NB04CR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 41A (Tc) 10V 15mOhm @ 10A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 40 V ±20V 1092 pF @ 20 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
TSM080NB03CR RLG

TSM080NB03CR RLG

MOSFET N-CH 30V 14A/59A 8PDFN

Taiwan Semiconductor Corporation

4,950 -
TSM080NB03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 59A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 30 V ±20V 1097 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 55.6W (Tc) -55°C ~ 175°C (TJ)
TPH6R004PL,LQ

TPH6R004PL,LQ

MOSFET N-CH 40V 87A/49A 8SOP

Toshiba Semiconductor and Storage

2,323 -
TPH6R004PL,LQ

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 4.5V, 10V 6mOhm @ 24.5A, 10V Surface Mount 2.4V @ 200µA 30 nC @ 10 V 40 V ±20V 2700 pF @ 20 V - - 8-SOP Advance (5x5) - 81W (Tc) 175°C
BUK9Y7R2-60RAX

BUK9Y7R2-60RAX

BUK9Y7R2-60RA/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
BUK9Y7R2-60RAX

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMN4008LFG-13

DMN4008LFG-13

MOSFET N-CH 40V 14.4A PWRDI3333

Diodes Incorporated

1,425 -
DMN4008LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.4A (Ta) 3.3V, 10V 7.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 74 nC @ 10 V 40 V ±20V 3537 pF @ 20 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
XP3NA2R4MT

XP3NA2R4MT

FET N-CH 30V 36.5A 118A PMPAK

YAGEO XSEMI

1,000 -
XP3NA2R4MT

数据表

XP3NA2R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.5A (Ta), 118A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V Surface Mount 3V @ 250µA 65.6 nC @ 4.5 V 30 V ±20V 5600 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
IPP020N03LF2SAKSA1

IPP020N03LF2SAKSA1

TRENCH <= 40V

Infineon Technologies

897 -
IPP020N03LF2SAKSA1

数据表

StrongIRFET™2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 33A (Ta), 125A (Tc) 4.5V, 10V 2.05mOhm @ 70A, 10V Through Hole 2.35V @ 80µA 104 nC @ 10 V 30 V ±20V 4700 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
TSM150NB04LCR RLG

TSM150NB04LCR RLG

MOSFET N-CH 40V 10A/41A 8PDFN

Taiwan Semiconductor Corporation

590 -
TSM150NB04LCR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 41A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 18 nC @ 10 V 40 V ±20V 966 pF @ 20 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
SISH107DN-T1-GE3

SISH107DN-T1-GE3

P-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

11,770 -
SISH107DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12.6A (Ta), 34.4A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 30 V ±20V 1400 pF @ 15 V - - PowerPAK® 1212-8SH - 3.57W (Ta), 26.5W (Tc) -55°C ~ 150°C (TJ)
SISH114ADN-T1-GE3

SISH114ADN-T1-GE3

MOSFET N-CH 30V 18A/35A PPAK

Vishay Siliconix

5,982 -
SISH114ADN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 35A (Tc) 4.5V, 10V 7.5mOhm @ 18A, 10V Surface Mount 2.5V @ 250µA 32 nC @ 10 V 30 V ±20V 1230 pF @ 15 V - - PowerPAK® 1212-8SH - 3.7W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
DI008N09SQ

DI008N09SQ

MOSFET SO8 90V 8A 0.075OHM 150C

Diotec Semiconductor

4,000 -
DI008N09SQ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel - 8A - - Surface Mount - - - - - - - 8-SO - 2W -
IRF3205ZPBFAKSA1

IRF3205ZPBFAKSA1

TRENCH 40<-<100V

Infineon Technologies

5,266 -
IRF3205ZPBFAKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 6.5mOhm @ 66A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 55 V ±20V 3450 pF @ 25 V - - PG-TO220-3-904 - 170W (Tc) -55°C ~ 175°C (TJ)
PSMN1R0-30YLD/2X

PSMN1R0-30YLD/2X

PSMN1R0-30YLD/SOT669/LFPAK

Nexperia USA Inc.

9,124 -
PSMN1R0-30YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 4.5V, 10V 1.02mOhm @ 25A, 10V Surface Mount 2.2V @ 2mA 121.35 nC @ 10 V 30 V ±20V 8598 pF @ 15 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C442NLAFT3G

NVMFS5C442NLAFT3G

MOSFET N-CH 40V 29A/130A 5DFN

onsemi

3,822 -
NVMFS5C442NLAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 29A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
STF8N60DM2

STF8N60DM2

MOSFET N-CH 600V 8A TO220FP

STMicroelectronics

5,740 -
STF8N60DM2

数据表

MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 4A, 10V Through Hole 5V @ 250µA 13.5 nC @ 10 V 600 V ±25V 449 pF @ 100 V - - TO-220FPAB - 25W (Tc) -55°C ~ 150°C (TJ)
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