富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RFP22N10

RFP22N10

MOSFET N-CH 100V 22A TO220-3

onsemi

9,000 -
RFP22N10

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 80mOhm @ 22A, 10V Through Hole 4V @ 250µA 150 nC @ 20 V 100 V ±20V - - - TO-220-3 - 100W (Tc) -55°C ~ 175°C (TJ)
SIHF540S-GE3

SIHF540S-GE3

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

9,261 -
SIHF540S-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 77mOhm @ 17A, 10V Surface Mount 4V @ 250µA 72 nC @ 10 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
IRFR3710ZPBF

IRFR3710ZPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies

9,302 -
IRFR3710ZPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 18mOhm @ 33A, 10V Surface Mount 4V @ 250µA 100 nC @ 10 V 100 V ±20V 2930 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
NTGS3446T1

NTGS3446T1

MOSFET N-CH 20V 2.5A 6TSOP

onsemi

8,730 -
NTGS3446T1

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 45mOhm @ 5.1A, 4.5V Surface Mount 1.2V @ 250µA 15 nC @ 4.5 V 20 V ±12V 750 pF @ 10 V - - 6-TSOP - 500mW (Ta) -55°C ~ 150°C (TJ)
FQT13N06LTF

FQT13N06LTF

MOSFET N-CH 60V 2.8A SOT223-4

onsemi

5,746 -
FQT13N06LTF

数据表

QFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 5V, 10V 110mOhm @ 1.4A, 10V Surface Mount 2.5V @ 250µA 6.4 nC @ 5 V 60 V ±20V 350 pF @ 25 V - - SOT-223-4 - 2.1W (Tc) -55°C ~ 150°C (TJ)
AON7700

AON7700

MOSFET N-CH 30V 16A/40A 8DFN

Alpha & Omega Semiconductor Inc.

8,537 -
AON7700

数据表

SRFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 40A (Tc) 4.5V, 10V 8.5mOhm @ 12A, 10V Surface Mount 3V @ 250µA 33 nC @ 4.5 V 30 V ±12V 4250 pF @ 15 V - Schottky Diode (Body) 8-DFN-EP (3x3) - 3.1W (Ta), 26W (Tc) -55°C ~ 150°C (TJ)
SI8465DB-T2-E1

SI8465DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix

7,450 -
SI8465DB-T2-E1

数据表

TrenchFET® 4-XFBGA, CSPBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 104mOhm @ 1.5A, 4.5V Surface Mount 1.5V @ 250µA 18 nC @ 10 V 20 V ±12V 450 pF @ 10 V - - 4-Microfoot - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ)
AO4304

AO4304

MOSFET N CH 30V 18A 8SOIC

Alpha & Omega Semiconductor Inc.

9,637 -
AO4304

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 6mOhm @ 15A, 10V Surface Mount 2.4V @ 250µA 29 nC @ 10 V 30 V ±20V 1920 pF @ 15 V - - 8-SOIC - 3.6W (Ta) -55°C ~ 150°C (TJ)
AON4421

AON4421

MOSFET P-CH 30V 8A 8DFN

Alpha & Omega Semiconductor Inc.

7,837 -
AON4421

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8A (Ta) 4.5V, 10V 26mOhm @ 8A, 10V Surface Mount 1.8V @ 250µA 21 nC @ 10 V 30 V ±20V 1120 pF @ 15 V - - 8-DFN (3x2) - 2.5W (Ta) -55°C ~ 150°C (TJ)
STR1P2UH7

STR1P2UH7

MOSFET P-CH 20V 1.4A SOT-23

STMicroelectronics

8,273 -
STR1P2UH7

数据表

STripFET™ H7 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.4A (Ta) 1.8V, 4.5V 100mOhm @ 700mA, 4.5V Surface Mount 1V @ 250µA 4.8 nC @ 4.5 V 20 V ±8V 510 pF @ 10 V - - SOT-23-3 - 350mW (Tc) 150°C (TJ)
PMPB14R7EPX

PMPB14R7EPX

MOSFET P-CH 30V 8A DFN2020M-6

Nexperia USA Inc.

7,855 -
PMPB14R7EPX

数据表

TrenchMOS™ 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8A (Ta) - 18mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 44 nC @ 10 V 30 V ±20V 1418 pF @ 15 V - - DFN2020MD-6 - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PXP6R7-30QLJ

PXP6R7-30QLJ

PXP6R7-30QL/SOT8002/MLPAK33

Nexperia USA Inc.

4,456 -
PXP6R7-30QLJ

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12.6A (Ta), 66.6A (Tc) 4.5V, 10V 6.7mOhm @ 12.6A, 10V Surface Mount 2.5V @ 250µA 133 nC @ 10 V 30 V ±20V 4400 pF @ 15 V - - MLPAK33 - 1.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
PJD6N10A_L2_00001

PJD6N10A_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

4,715 -
PJD6N10A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Ta), 6A (Tc) 4.5V, 10V 310mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 9.1 nC @ 10 V 100 V ±20V 508 pF @ 30 V - - TO-252AA - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
PJD11N06A_L2_00001

PJD11N06A_L2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,209 -
PJD11N06A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.7A (Ta), 11A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 60 V ±20V 509 pF @ 15 V - - TO-252AA - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
VN0106N3-G-P003

VN0106N3-G-P003

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology

8,899 -
VN0106N3-G-P003

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2.4V @ 1mA - 60 V ±20V 65 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
XP60SA380DIT

XP60SA380DIT

MOSFET N CH 600V 10A TO-220CFM-

YAGEO XSEMI

9,870 -
XP60SA380DIT

数据表

XP60SA380D TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 3.2A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 600 V ±20V 1216 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
IRFZ24NLPBF

IRFZ24NLPBF

MOSFET N-CH 55V 17A TO262

Infineon Technologies

4,651 -
IRFZ24NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 70mOhm @ 10A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 55 V ±20V 370 pF @ 25 V - - TO-262 - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
HUFA76429D3S

HUFA76429D3S

MOSFET N-CH 60V 20A TO252AA

onsemi

7,646 -
HUFA76429D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V Surface Mount 3V @ 250µA 46 nC @ 10 V 60 V ±16V 1480 pF @ 25 V - - TO-252AA - 110W (Tc) -55°C ~ 175°C (TJ)
ZVN0545ASTZ

ZVN0545ASTZ

MOSFET N-CH 450V 90MA E-LINE

Diodes Incorporated

6,278 -
ZVN0545ASTZ

数据表

- E-Line-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90mA (Ta) 10V 50Ohm @ 100mA, 10V Through Hole 3V @ 1mA - 450 V ±20V 70 pF @ 25 V - - E-Line (TO-92 compatible) - 700mW (Ta) -55°C ~ 150°C (TJ)
HUFA75329P3

HUFA75329P3

MOSFET N-CH 55V 49A TO220-3

onsemi

6,455 -
HUFA75329P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 24mOhm @ 49A, 10V Through Hole 4V @ 250µA 75 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - TO-220-3 - 128W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户