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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DI050N06D1

DI050N06D1

MOSFET, DPAK, 60V, 50A, 0, 42W

Diotec Semiconductor

898 -
DI050N06D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 10 V 65 V ±20V 825 pF @ 30 V - - TO-252 (DPAK) - 42W (Tc) -55°C ~ 150°C (TJ)
TSM038N03PQ33 RGG

TSM038N03PQ33 RGG

MOSFET N-CH 30V 78A 8PDFN

Taiwan Semiconductor Corporation

18,312 -
TSM038N03PQ33 RGG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 4.5 V 30 V ±20V 2557 pF @ 15 V - - 8-PDFN (3.1x3.1) - 39W (Tc) -55°C ~ 150°C (TJ)
PJQ5443_R2_00001

PJQ5443_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,975 -
PJQ5443_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V 2767 pF @ 25 V - - DFN5060-8 - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ)
DMP4025LK3-13

DMP4025LK3-13

MOSFET P-CH 40V 6.7A TO252

Diodes Incorporated

4,900 -
DMP4025LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.7A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 33.7 nC @ 10 V 40 V ±20V 1643 pF @ 20 V - - TO-252-3 - 1.7W (Ta) -55°C ~ 150°C (TJ)
PJQ4401P-AU_R2_000A1

PJQ4401P-AU_R2_000A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,387 -
PJQ4401P-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 27 nC @ 4.5 V 30 V ±20V 3228 pF @ 15 V AEC-Q101 - DFN3333-8 Automotive 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ)
MCU1K4N95SH-TP

MCU1K4N95SH-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

3,438 -
MCU1K4N95SH-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.49Ohm @ 2.5A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 950 V ±30V 456 pF @ 100 V - - TO-252 (DPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
DMTH4005SPSWQ-13

DMTH4005SPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

3,829 -
DMTH4005SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.9A (Ta), 100A (Tc) 10V 3.7mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 250µA 49.1 nC @ 10 V 40 V ±20V 3062 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.6W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
DMTH4004SPSWQ-13

DMTH4004SPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

6,829 -
DMTH4004SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 100A (Tc) 10V 2.7mOhm @ 90A, 10V Surface Mount, Wettable Flank 4V @ 250µA 68.6 nC @ 10 V 40 V ±20V 4305 pF @ 25 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
IPI35CN10N G

IPI35CN10N G

MOSFET N-CH 100V 27A TO262-3

Infineon Technologies

4,659 -
IPI35CN10N G

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 35mOhm @ 27A, 10V Through Hole 4V @ 29µA 24 nC @ 10 V 100 V ±20V 1570 pF @ 50 V - - PG-TO262-3 - 58W (Tc) -55°C ~ 175°C (TJ)
STS25NH3LL

STS25NH3LL

MOSFET N-CH 30V 25A 8SO

STMicroelectronics

8,808 -
STS25NH3LL

数据表

STripFET™ III 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 3.5mOhm @ 12.5A, 10V Surface Mount 1V @ 250µA 40 nC @ 4.5 V 30 V ±18V 4450 pF @ 25 V - - 8-SOIC - 3.2W (Tc) -55°C ~ 175°C (TJ)
FDD2512

FDD2512

MOSFET N-CH 150V 6.7A TO252

onsemi

4,066 -
FDD2512

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Ta) 6V, 10V 420mOhm @ 2.2A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 150 V ±20V 344 pF @ 75 V - - TO-252AA - 42W (Ta) -55°C ~ 175°C (TJ)
FDS4780

FDS4780

MOSFET N-CH 40V 10.8A 8SOIC

onsemi

7,904 -
FDS4780

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.8A (Ta) 10V 10.5mOhm @ 10.8A, 10V Surface Mount 5V @ 250µA 40 nC @ 10 V 40 V ±20V 1686 pF @ 20 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
PSMN1R5-40YSD/2X

PSMN1R5-40YSD/2X

PSMN1R5-40YSD/SOT669/LFPAK

Nexperia USA Inc.

9,323 -
PSMN1R5-40YSD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 99 nC @ 10 V 40 V ±20V 7752 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
FDU6512A

FDU6512A

MOSFET N-CH 20V 10.7A/36A IPAK

onsemi

4,905 -
FDU6512A

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V Through Hole 1.5V @ 250µA 19 nC @ 4.5 V 20 V ±12V 1082 pF @ 10 V - - IPAK - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
IRLR024NTRL

IRLR024NTRL

MOSFET N-CH 55V 17A DPAK

Infineon Technologies

2,556 -
IRLR024NTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V Surface Mount 2V @ 250µA 15 nC @ 5 V 55 V ±16V 480 pF @ 25 V - - TO-252AA (DPAK) - 45W (Tc) -55°C ~ 175°C (TJ)
FKI07076

FKI07076

MOSFET N-CH 75V 55A TO220F

Sanken Electric USA Inc.

4,065 -
FKI07076

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 6.9mOhm @ 44A, 10V Through Hole 2.5V @ 1.5mA 91.6 nC @ 10 V 75 V ±20V 6340 pF @ 25 V - - TO-220F - 42W (Tc) 150°C (TJ)
FKI10126

FKI10126

MOSFET N-CH 100V 41A TO220F

Sanken Electric USA Inc.

2,658 -
FKI10126

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 41A (Tc) 4.5V, 10V 11.6mOhm @ 33A, 10V Through Hole 2.5V @ 1.5mA 88.8 nC @ 10 V 100 V ±20V 6420 pF @ 25 V - - TO-220F - 42W (Tc) 150°C (TJ)
TSM038N03PQ33

TSM038N03PQ33

30V, 78A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,096 -
TSM038N03PQ33

数据表

- 8-PowerWDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 19A (Ta), 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V Surface Mount 2.5V @ 250µA 48 nC @ 10 V 30 V ±20V 2557 pF @ 15 V - - 8-PDFN (3.1x3.1) - 2.4W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
DMN90H8D5HCT

DMN90H8D5HCT

MOSFET N-CH 900V 2.5A TO220AB

Diodes Incorporated

9,504 -
DMN90H8D5HCT

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 7Ohm @ 1A, 10V Through Hole 5V @ 250µA 7.9 nC @ 10 V 900 V ±30V 470 pF @ 25 V - - TO-220-3 - 125W (Tc) -55°C ~ 150°C (TJ)
DMTH62M7SPSW-13

DMTH62M7SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

8,236 -
DMTH62M7SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 170A (Tc) 10V 2.7mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 68.7 nC @ 10 V 60 V ±20V 4973 pF @ 30 V - - PowerDI5060-8 (Type UX) - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
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