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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJP10NA60_T0_00001

PJP10NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

6,245 -
PJP10NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 900mOhm @ 5A, 10V Through Hole 4V @ 250µA 23 nC @ 10 V 600 V ±30V 1192 pF @ 25 V - - TO-220AB - 156W (Tc) -55°C ~ 150°C (TJ)
AOD66616

AOD66616

N

Alpha & Omega Semiconductor Inc.

7,909 -
AOD66616

数据表

AlphaSGT™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 3.7mOhm @ 20A, 10V Surface Mount 3.4V @ 250µA 60 nC @ 10 V 60 V ±20V 2870 pF @ 30 V - - TO-252 (DPAK) - 113W (Tc) -55°C ~ 150°C (TJ)
DI064P04D1-AQ

DI064P04D1-AQ

MOSFET DPAK P -40V -64A

Diotec Semiconductor

2,814 -
DI064P04D1-AQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 7.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 105 nC @ 10 V 40 V ±20V 7475 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 48.3W (Tc) -55°C ~ 150°C (TJ)
SIHF8N50D-E3

SIHF8N50D-E3

MOSFET N-CH 500V 8.7A TO220

Vishay Siliconix

4,343 -
SIHF8N50D-E3

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 850mOhm @ 4A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 500 V ±30V 527 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
DMTH4004SK3Q-13

DMTH4004SK3Q-13

MOSFET N-CH 40V 100A TO252

Diodes Incorporated

3,273 -
DMTH4004SK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.2mOhm @ 90A, 10V Surface Mount 4V @ 250µA 68.6 nC @ 10 V 40 V ±20V 4305 pF @ 25 V AEC-Q101 - TO-252-3 Automotive 3.9W (Ta), 180W (Tc) -55°C ~ 175°C (TJ)
SI1012X-T1-GE3

SI1012X-T1-GE3

MOSFET N-CH 20V 500MA SC89-3

Vishay Siliconix

10 -
SI1012X-T1-GE3

数据表

TrenchFET® SC-89, SOT-490 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V Surface Mount 900mV @ 250µA 0.75 nC @ 4.5 V 20 V ±6V - - - SC-89-3 - 250mW (Ta) -55°C ~ 150°C (TJ)
RTU002P02T106

RTU002P02T106

MOSFET P-CH 20V 250MA UMT3

Rohm Semiconductor

9,337 -
RTU002P02T106

数据表

- SC-70, SOT-323 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 250mA (Ta) 2.5V, 4.5V 1.5Ohm @ 250mA, 4.5V Surface Mount 2V @ 1mA - 20 V ±12V 50 pF @ 10 V - - UMT3 - 200mW (Ta) 150°C (TJ)
DMN100-7-F

DMN100-7-F

MOSFET N-CH 30V 1.1A SC59-3

Diodes Incorporated

2,864 -
DMN100-7-F

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.1A (Ta) 4.5V, 10V 240mOhm @ 1A, 10V Surface Mount 3V @ 1mA 5.5 nC @ 10 V 30 V ±20V 150 pF @ 10 V - - SC-59-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
BSP320SL6327HTSA1

BSP320SL6327HTSA1

MOSFET N-CH 60V 2.9A SOT223-4

Infineon Technologies

8,313 -
BSP320SL6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 10V 120mOhm @ 2.9A, 10V Surface Mount 4V @ 20µA 12 nC @ 10 V 60 V ±20V 340 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
BSP320SL6433HTMA1

BSP320SL6433HTMA1

MOSFET N-CH 60V 2.9A SOT223-4

Infineon Technologies

6,971 -
BSP320SL6433HTMA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 10V 120mOhm @ 2.9A, 10V Surface Mount 4V @ 20µA 12 nC @ 10 V 60 V ±20V 340 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
NTMS5835NLR2G

NTMS5835NLR2G

MOSFET N-CH 40V 9.2A 8SOIC

onsemi

7,915 -
NTMS5835NLR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.2A (Ta) 4.5V, 10V 10mOhm @ 10A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 40 V ±20V 2115 pF @ 20 V - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
SSM3J306T(TE85L,F)

SSM3J306T(TE85L,F)

MOSFET P-CH 30V 2.4A TSM

Toshiba Semiconductor and Storage

8,665 -
SSM3J306T(TE85L,F)

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 4V, 10V 117mOhm @ 1A, 10V Surface Mount - 2.5 nC @ 15 V 30 V ±20V 280 pF @ 15 V - - TSM - 700mW (Ta) 150°C (TJ)
BSC079N03LSCGATMA1

BSC079N03LSCGATMA1

MOSFET N-CH 30V 14A/50A TDSON

Infineon Technologies

9,582 -
BSC079N03LSCGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 50A (Tc) 4.5V, 10V 7.9mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 19 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
TSM120NA03CR RLG

TSM120NA03CR RLG

MOSFET N-CH 30V 39A 8PDFN

Taiwan Semiconductor Corporation

3,914 -
TSM120NA03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 4.5V, 10V 11.7mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 9.2 nC @ 10 V 30 V ±20V 562 pF @ 15 V - - 8-PDFN (5x6) - 33W (Tc) -55°C ~ 150°C (TJ)
PJD25N04_L2_00001

PJD25N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,824 -
PJD25N04_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.9A (Ta), 21A (Tc) 4.5V, 10V 32mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 4.4 nC @ 4.5 V 40 V ±20V 425 pF @ 25 V - - TO-252AA - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
PJQ2408_R1_00001

PJQ2408_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,380 -
PJQ2408_R1_00001

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 11.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 6.9 nC @ 4.5 V 30 V ±20V 781 pF @ 25 V - - DFN2020B-6 - 2W (Ta) -55°C ~ 150°C (TJ)
TSM1NB60CP

TSM1NB60CP

600V, 1A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,426 -
TSM1NB60CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Surface Mount 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-252 (DPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
TSM1NB60CH

TSM1NB60CH

600V, 1A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,992 -
TSM1NB60CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-251 (IPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
AOT600A60L

AOT600A60L

MOSFET N-CH 600V 8A TO220

Alpha & Omega Semiconductor Inc.

3,683 -
AOT600A60L

数据表

aMOS5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 2.1A, 10V Through Hole 3.5V @ 250µA 11.5 nC @ 10 V 600 V ±20V 608 pF @ 100 V - - TO-220 - 27.5W (Tc) -55°C ~ 150°C (TJ)
AOTF600A60L

AOTF600A60L

MOSFET N-CH 600V 8A TO220F

Alpha & Omega Semiconductor Inc.

8,437 -
AOTF600A60L

数据表

aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tj) 10V 600mOhm @ 2.1A, 10V Through Hole 3.5V @ 250µA 11.5 nC @ 10 V 600 V ±20V 608 pF @ 100 V - - TO-220F - 27.5W (Tc) -55°C ~ 150°C (TJ)
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