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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
N0603N-S23-AY

N0603N-S23-AY

MOSFET N-CH 60V 100A TO262

Renesas Electronics Corporation

1,470 -
N0603N-S23-AY

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100A (Ta) 10V 4.6mOhm @ 50A, 10V Through Hole - 133 nC @ 10 V 60 V ±20V 7730 pF @ 25 V - - TO-262 - 1.5W (Ta), 156W (Tc) 150°C (TJ)
RJK0353DPA-01#J0B

RJK0353DPA-01#J0B

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics Corporation

10,000 -
RJK0353DPA-01#J0B

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 4.5V, 10V 5.2mOhm @ 17.5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 4.5 V 30 V ±20V 2180 pF @ 10 V - - 8-WPAK - 40W (Tc) 150°C (TJ)
NP45N06PUK-E1-AY

NP45N06PUK-E1-AY

MOSFET N-CH 60V 45A TO263

Renesas Electronics Corporation

6,401 -
NP45N06PUK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 9.6mOhm @ 23A, 10V Surface Mount 4V @ 250µA 45 nC @ 10 V 60 V ±20V 2540 pF @ 25 V AEC-Q101 - TO-263-3 Automotive 1.2W (Ta), 75W (Tc) 175°C
RQM2201DNSWS#P1

RQM2201DNSWS#P1

N CH MOS FET POWER SWITCHING

Renesas Electronics Corporation

1,970 -
RQM2201DNSWS#P1

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP16N06YLL-E1-AY

NP16N06YLL-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

4,751 -
NP16N06YLL-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 35mOhm @ 8A, 10V Surface Mount 2V @ 1mA 18 nC @ 10 V 60 V ±20V 600 pF @ 25 V - - 8-HSON (5x5.4) - 1.25W (Ta), 27.3W (Tc) 175°C
RJK0391DPA-00#J5A

RJK0391DPA-00#J5A

MOSFET N-CH 30V 50A 8WPAK

Renesas Electronics Corporation

6,000 -
RJK0391DPA-00#J5A

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 2.9mOhm @ 25A, 10V Surface Mount 2.5V @ 1mA 34 nC @ 4.5 V 30 V ±20V 5600 pF @ 10 V - - 8-WPAK (3) - 50W (Tc) 150°C (TJ)
NP60N055VUK-E1-AY

NP60N055VUK-E1-AY

MOSFET N-CH 55V 60A TO252-3

Renesas Electronics Corporation

7,973 -
NP60N055VUK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 5.5mOhm @ 30A, 10V Surface Mount 4V @ 253µA 63 nC @ 10 V 55 V ±20V 3750 pF @ 25 V - - TO-252-3 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
NP60N04VUK-E1-AY

NP60N04VUK-E1-AY

MOSFET N-CH 40V 60A TO252

Renesas Electronics Corporation

4,199 -
NP60N04VUK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 3.85mOhm @ 30A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 40 V ±20V 3680 pF @ 25 V - - TO-252 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
2SK3434-Z-AZ

2SK3434-Z-AZ

MOSFET N-CH

Renesas Electronics Corporation

1,516 -
2SK3434-Z-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0380DPA-00#J53

RJK0380DPA-00#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

69,000 -
RJK0380DPA-00#J53

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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