Renesas|场效应晶体管（FETs）、MOSFETs - 页 46

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
2SK973L-E GENERAL SWITCHING POWER MOSFET Renesas Electronics Corporation	1,709	-	询价单	数据表	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK5030DPP-M0#T2 MOSFET N-CH 500V 5A TO220FL Renesas Electronics Corporation	1,411	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.6Ohm @ 2A, 10V	Through Hole	-	13 nC @ 10 V	500 V	±30V	550 pF @ 25 V	-	-	TO-220FL	-	28.5W (Tc)	150°C (TJ)
NP35N055YUK-E1-AY MOSFET N-CH 55V 35A 8HSON Renesas Electronics Corporation	5,000	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	6.7mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	57 nC @ 10 V	55 V	±20V	3360 pF @ 25 V	-	-	8-HSON (5x5.4)	-	1W (Ta), 97W (Tc)	175°C
RJK2017DPP-M0#T2 ABU / MOSFET Renesas Electronics Corporation	8,150	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	10V	47mOhm @ 22.5A, 10V	Through Hole	4V @ 1mA	66 nC @ 10 V	200 V	±30V	4800 pF @ 25 V	-	-	TO-220FL	-	30W (Tc)	150°C
N0434N-S23-AY MOSFET N-CH 40V 100A TO262 Renesas Electronics Corporation	2,978	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Ta)	10V	3.7mOhm @ 50A, 10V	Through Hole	-	100 nC @ 10 V	40 V	±20V	5550 pF @ 25 V	-	-	TO-262	-	1.5W (Ta), 119W (Tc)	150°C (TJ)
HAT1130RWS-E P-CHANNEL POWER MOSFET Renesas Electronics Corporation	2,170	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3943-ZP-E1-AY MOSFET N-CH 40V 82A TO263 Renesas Electronics Corporation	4,346	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	82A (Tc)	5.5V, 10V	3.5mOhm @ 41A, 10V	Surface Mount	-	93 nC @ 10 V	40 V	±20V	5800 pF @ 10 V	-	-	TO-263	-	1.5W (Ta), 104W (Tc)	150°C (TJ)
RJK1002DPP-A0#T2 MOSFET N-CH 100V 70A TO220FPA Renesas Electronics Corporation	7,569	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Ta)	10V	7.6mOhm @ 35A, 10V	Through Hole	4V @ 1mA	94 nC @ 10 V	100 V	±20V	6450 pF @ 10 V	-	-	TO-220ABA	-	30W (Ta)	150°C
NP35N04YUG-E1-AY MOSFET N-CH 40V 35A 8HSON Renesas Electronics Corporation	5,000	-	询价单	数据表	-	8-SMD, Flat Lead Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	10mOhm @ 17.5A, 10V	Surface Mount	4V @ 250µA	54 nC @ 10 V	40 V	±20V	2850 pF @ 25 V	-	-	8-HSON	-	1W (Ta), 77W (Tc)	175°C (TJ)
HAT1043M-EL-E 4.4A, 20V, P-CHANNEL MOSFET Renesas Electronics Corporation	12,696	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	4.4A (Ta)	-	65mOhm @ 3A, 4.5V	Surface Mount	-	11 nC @ 4.5 V	20 V	-	750 pF @ 10 V	-	-	6-TSOP	-	1.05W (Ta)	150°C (TJ)

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