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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJK03P6DPA-00#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
27,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK0393DPA-0G#J7APOWER TRANSISTOR, MOSFET Renesas Electronics Corporation |
12,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2803T1L-E2-AYMOSFET N-CH 20V 20A 8DFN Renesas Electronics Corporation |
9,000 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | - | 5.8mOhm @ 20A, 4.5V | Surface Mount | 1.5V @ 1mA | 20 nC @ 4 V | 20 V | - | 2450 pF @ 10 V | - | - | 8-DFN3333 (3.3x3.3) | - | - | - |
|
|
RJK03P6DPA-WS#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,750 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK0226DNS-WS#J5N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,600 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03M0DPA-WS#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,120 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NP48N055MHE-S18-AYN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
250 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK5033DPD-00#J2MOSFET N-CH 500V 6A MP3A Renesas Electronics Corporation |
6,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | Surface Mount | - | - | 500 V | ±30V | 600 pF @ 25 V | - | - | MP-3A | - | 65W (Tc) | 150°C (TJ) |
|
HAT2169H-EL-EMOSFET N-CH 40V 50A LFPAK Renesas Electronics Corporation |
5,322 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Ta) | 4.5V, 10V | 3.5mOhm @ 25A, 10V | Surface Mount | 2.5V @ 1mA | 45 nC @ 4.5 V | 40 V | ±20V | 6650 pF @ 10 V | - | - | LFPAK | - | 30W (Tc) | 150°C (TJ) |
|
|
UPA2826T1S-E2-AT8P HWSON Renesas Electronics Corporation |
9,754 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 2.5V, 8V | 4.3mOhm @ 13.5A, 8V | Surface Mount | 1.5V @ 1mA | 37 nC @ 4 V | 20 V | ±12V | 3610 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 20W (Ta) | 150°C |
