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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HAT2085T-EL-E

HAT2085T-EL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

21,000 -
HAT2085T-EL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0380DPA-02#J0

RJK0380DPA-02#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

15,000 -
RJK0380DPA-02#J0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0380DPA-WS#J53

RJK0380DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

320 -
RJK0380DPA-WS#J53

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP50N04YUK-E1-AY

NP50N04YUK-E1-AY

LOW VOLTAGE POWER MOSFET

Renesas Electronics Corporation

4,894 -
NP50N04YUK-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 4.8mOhm @ 25A, 10V Surface Mount 4V @ 250µA 57 nC @ 10 V 40 V ±20V 3200 pF @ 25 V AEC-Q101 - 8-HSON (5x5.4) Automotive 1W (Ta), 97W (Tc) 175°C
NP60N06VLK-E1-AY

NP60N06VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

3,222 -
NP60N06VLK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 7.9mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 56 nC @ 10 V 60 V ±20V 3600 pF @ 25 V AEC-Q101 - TO-252 (MP-3ZP) Automotive 1.2W (Ta), 105W (Tc) 175°C
NP60N04VLK-E1-AY

NP60N04VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

2,498 -
NP60N04VLK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 3.9mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 63 nC @ 10 V 40 V ±20V 3680 pF @ 25 V AEC-Q101 - TO-252 (MP-3ZP) Automotive 1.2W (Ta), 105W (Tc) 175°C
HAT2201WP-EL-E

HAT2201WP-EL-E

15A, 100V, N-CHANNEL MOSFET

Renesas Electronics Corporation

2,500 -
HAT2201WP-EL-E

数据表

- 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Ta) - 43mOhm @ 7.5A, 10V Surface Mount - 21 nC @ 10 V 100 V - 1450 pF @ 10 V - - 8-WPAK - - 150°C (TJ)
2SK1335-90L

2SK1335-90L

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,970 -
2SK1335-90L

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2802T1L-E2-AY

UPA2802T1L-E2-AY

MOSFET N-CH 20V 18A 8DFN

Renesas Electronics Corporation

189,000 -
UPA2802T1L-E2-AY

数据表

- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) - 5.8mOhm @ 18A, 10V Surface Mount 2.5V @ 1mA 16 nC @ 5 V 20 V - 1800 pF @ 10 V - - 8-DFN3333 (3.3x3.3) - - -
RJK0393DPA-00#J53

RJK0393DPA-00#J53

MOSFET N-CH 30V 40A 8WPAK

Renesas Electronics Corporation

29,700 -
RJK0393DPA-00#J53

数据表

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40A (Ta) - 4.3mOhm @ 20A, 10V Surface Mount - 21 nC @ 4.5 V 30 V - 3270 pF @ 10 V - - 8-WPAK - 40W (Tc) -
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